High voltage N Channel MOSFET ARK micro FTX15N35G 350V with halogen free and RoHS compliant features
Key Attributes
Model Number:
FTX15N35G
Product Custom Attributes
Drain To Source Voltage:
350V
Current - Continuous Drain(Id):
200mA
RDS(on):
15Ω@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
0.75pF@25V
Number:
1 N-channel
Pd - Power Dissipation:
1W
Input Capacitance(Ciss):
32.58pF
Mfr. Part #:
FTX15N35G
Package:
SOT-89
Product Description
ARK Microelectronics FTX15N35G 350V N-Channel Enhancement Mode MOSFET
The FTX15N35G is a 350V N-Channel Enhancement Mode MOSFET from ARK Microelectronics, featuring proprietary advanced planar technology and a rugged polysilicon gate cell structure. It offers fast switching speeds and is suitable for high-efficiency SMPS, adaptors/chargers, and active PFC applications. This RoHS compliant and Halogen-free component is available in a SOT-89 package.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Model: FTX15N35G
- Package: SOT-89
- Marking: N35
- Certifications: RoHS Compliant, Halogen-free available
- Origin: China (Sichuan)
Technical Specifications
| Parameter | Symbol | Min. | Typ. | Max. | Unit | Test Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain-to-Source Voltage | VDSS | 350 | V | TA=25 unless otherwise specified | ||
| Continuous Drain Current | ID | 0.2 | A | TA=25 unless otherwise specified | ||
| Pulsed Drain Current | IDM | 0.6 | A | TA=25 unless otherwise specified | ||
| Power Dissipation | PD | 1.0 | W | TA=25 unless otherwise specified | ||
| Gate-to-Source Voltage | VGS | 20 | V | TA=25 unless otherwise specified | ||
| Soldering Temperature | TL | 300 | Distance of 1.6mm from case for 10 seconds | |||
| Operating and Storage Temperature Range | TJ and TSTG | -55 | 150 | TA=25 unless otherwise specified | ||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction-to-Ambient | RJA | 125 | K/W | TA=25 unless otherwise specified | ||
| OFF Characteristics | ||||||
| Drain-to-Source Breakdown Voltage | BVDSS | 350 | V | VGS=0V, ID=250A | ||
| Breakdown Voltage Temperature Coefficient | BVDSS/TJ | 0.35 | V/ | Reference to 25, ID=250A | ||
| Drain-to-Source Leakage Current | IDSS | 1 | A | VDS=350VVGS= 0V | ||
| Drain-to-Source Leakage Current | IDSS | 100 | A | VDS=350VVGS= 0V, TJ=125 | ||
| Gate-to-Source Leakage Current | IGSS | 20 | A | VGS=+20V, VDS=0V | ||
| Gate-to-Source Leakage Current | IGSS | -20 | A | VGS=-20V, VDS=0V | ||
| ON Characteristics | ||||||
| Static Drain-to-Source On-Resistance | RDS(ON) | 8 | 15 | VGS=10VID=200mA [3] | ||
| Gate Threshold Voltage | VGS(TH) | 1 | 3 | V | VGD =0V, ID=250A | |
| Dynamic Characteristics | ||||||
| Input Capacitance | CISS | 32.58 | pF | VGS=0V VDS=25V f=1.0MHZ | ||
| Output Capacitance | COSS | 5.36 | pF | VGS=0V VDS=25V f=1.0MHZ | ||
| Reverse Transfer Capacitance | CRSS | 0.75 | pF | VGS=0V VDS=25V f=1.0MHZ | ||
| Turn-on Delay Time | td(ON) | 14 | ns | VDD = 25V, ID=80mA RG = 25Ohm VGS = 10V~0V | ||
| Rise Time | trise | 10 | ns | VDD = 25V, ID=80mA RG = 25Ohm VGS = 10V~0V | ||
| Turn-off Delay Time | td(OFF) | 24 | ns | VDD = 25V, ID=80mA RG = 25Ohm VGS = 10V~0V | ||
| Fall Time | tfall | 36 | ns | VDD = 25V, ID=80mA RG = 25Ohm VGS = 10V~0V | ||
| Source-Drain Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | 1.8 | V | ISD =200 mA, VGS = 0 V | ||
2410121606_ARK-micro-FTX15N35G_C3031431.pdf
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