650V 15A AlphaIGBT transistor AOS AOTF15B65M1 with soft fast recovery diode and low switching loss
Key Attributes
Model Number:
AOTF15B65M1
Product Custom Attributes
Collector-Emitter Breakdown Voltage (Vces):
650V
Mfr. Part #:
AOTF15B65M1
Package:
TO-220
Product Description
Product Overview
The AOTF15B65M1 is a 650V, 15A AlphaIGBT featuring a soft and fast recovery anti-parallel diode. It utilizes the latest AlphaIGBT(IGBT) technology, offering a 650V breakdown voltage and a very fast and soft recovery freewheeling diode. This IGBT provides high efficient turn-on di/dt controllability, low VCE(sat) for high efficiencies, and low turn-off switching loss with softness. It exhibits very good EMI behavior and high short-circuit ruggedness. Ideal applications include motor drives, sewing machines, home appliances, fans, pumps, vacuum cleaners, and other hard switching applications.
Product Attributes
- Brand: AOS
- Technology: AlphaIGBT (IGBT)
- Package Type: TO220F
- Form: Tube
- Minimum Order Quantity: 1000
Technical Specifications
| Parameter | Conditions | Min | Typ | Max | Units |
|---|---|---|---|---|---|
| Absolute Maximum Ratings | |||||
| Collector-Emitter Voltage | TA=25C unless otherwise noted | - | - | 650 | V |
| Collector-Emitter Voltage | Symbol BV CES | 650 | - | - | V |
| Gate-Emitter Voltage | - | - | - | 30 | V |
| Continuous Collector Current | TC=25C | - | - | 152) | A |
| Continuous Collector Current | TC=100C | - | - | 152) | A |
| Pulsed Collector Current, Limited by TJmax | ICM | - | - | 45 | A |
| Continuous Diode Forward Current | TC=25C | - | - | 302) | A |
| Continuous Diode Forward Current | TC=100C | - | - | 152) | A |
| Diode Pulsed Current, Limited by TJmax | I FM | - | - | 302) | A |
| Short circuit withstanding time | 1) | - | - | 5 | ms |
| Power Dissipation | TC=25C | - | - | 300 | W |
| Junction and Storage Temperature Range | - | -55 | - | 150 | C |
| Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds | TL | - | - | 260 | C |
| Thermal Characteristics | |||||
| Maximum IGBT Junction-to-Case | R JC | - | 3.5 | - | C/W |
| Maximum Diode Junction-to-Case | R JC 1) | - | 5 | - | C/W |
| Maximum Junction-to-Ambient | R JA | - | 65 | - | C/W |
| Electrical Characteristics (TJ=25C unless otherwise noted) | |||||
| Collector-Emitter Breakdown Voltage | VGE=0V, IC=1mA | 650 | - | - | V |
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V | - | - | 1 | mA |
| Zero Gate Voltage Collector Current | VCE=650V, VGE=0V, TJ=150C | - | - | 1 | mA |
| Gate-Emitter Leakage Current | VGE=0V, VCE=30V | - | - | 100 | nA |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=15A, TJ=25C | - | 1.7 | 2.15 | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=15A, TJ=125C | - | 2.03 | - | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=15A, TJ=150C | - | 2.12 | - | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=30A, TJ=25C | - | 1.77 | 2.25 | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=30A, TJ=125C | - | 1.82 | - | V |
| Collector-Emitter Saturation Voltage | VGE=15V, IC=30A, TJ=150C | - | 1.79 | - | V |
| Diode Forward Voltage | IF=15A, TJ=25C | - | 1.7 | 2.15 | V |
| Diode Forward Voltage | IF=15A, TJ=150C | - | 1.5 | - | V |
| Forward Transconductance | VCE=5V, IC=15A | - | 11 | - | S |
| Gate-Emitter Threshold Voltage | VCE=5V, IC=1mA | - | 5.1 | - | V |
| Dynamic Parameters | |||||
| Input Capacitance | VGE=0V, VCC=25V, f=1MHz | - | 923 | - | pF |
| Output Capacitance | VGE=0V, VCC=25V, f=1MHz | - | 96 | - | pF |
| Reverse Transfer Capacitance | VGE=0V, VCC=25V, f=1MHz | - | 33 | - | pF |
| Total Gate Charge | VGE=15V, VCC=520V, IC=15A | - | 32 | - | nC |
| Gate to Emitter Charge | VGE=15V, VCC=520V, IC=15A | - | 7.8 | - | nC |
| Gate to Collector Charge | VGE=15V, VCC=520V, IC=15A | - | 15 | - | nC |
| Short circuit collector current | VGE=15V, VCC=400V, tsc5us, TJ150C | - | 90 | - | A |
| Turn-On Delay Time | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 14 | - | ns |
| Turn-On Rise Time | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 20 | - | ns |
| Turn-Off Delay Time | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 111 | - | ns |
| Turn-Off Fall Time | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 24 | - | ns |
| Turn-On Energy | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 0.32 | - | mJ |
| Turn-Off Energy | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 0.34 | - | mJ |
| Total Switching Energy | TJ=150C, VGE=15V, VCC=400V, IC=15A, RG=20W | - | 0.66 | - | mJ |
| Diode Reverse Recovery Time | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=25C | - | 317 | - | ns |
| Diode Reverse Recovery Charge | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=25C | - | 0.7 | - | mC |
| Diode Peak Reverse Recovery Current | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=25C | - | 4.7 | - | A |
| Diode Reverse Recovery Time | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=150C | - | 478 | - | ns |
| Diode Reverse Recovery Charge | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=150C | - | 1.1 | - | mC |
| Diode Peak Reverse Recovery Current | IF=15A, dI/dt=200A/ms, VCC=400V, TJ=150C | - | 5.7 | - | A |
2410121815_AOS-AOTF15B65M1_C5299861.pdf
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