Low RDS ON 60V N Channel MOSFET BL BLM04N06 P Suitable for High Frequency and Hard Switched Circuits
Key Attributes
Model Number:
BLM04N06-P
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
150A
Operating Temperature -:
-55℃~+175℃
RDS(on):
4.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
680pF
Output Capacitance(Coss):
760pF
Input Capacitance(Ciss):
8.2nF
Pd - Power Dissipation:
210W
Gate Charge(Qg):
186nC@10V
Mfr. Part #:
BLM04N06-P
Package:
TO-220
Product Description
Product Overview
The Belling BLM04N06 is a 60V N-Channel Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, making it suitable for a wide range of power switching applications, including hard switched and high-frequency circuits, and uninterruptible power supplies. Key features include a high-density cell design for lower RDS(ON), fully characterized avalanche voltage and current, and good stability and uniformity with high EAS. The device is 100% UIS and DVDS tested, ensuring reliability.Product Attributes
- Brand: Belling
- Product Code: BLM04N06
- Color: Green Product
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Key Characteristics | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Continuous Drain Current | ID | 150 | A | |||
| RDS(ON) | RDS(ON) | VGS=10V | 3.5 | 4.2 | m | |
| Absolute Maximum Ratings (TA=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 60 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous | ID | 150 | A | |||
| Drain Current-Pulsed (Note 1) | IDM | 600 | A | |||
| Maximum Power Dissipation (Tc=25) | PD | 210 | W | |||
| Single pulse avalanche energy (Note 2) | EAS | 1000 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | To | 175 | ||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 0.7 | /W | |||
| Electrical Characteristics (TA=25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 60 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=60V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| On Characteristics | ||||||
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 2 | 3 | 4 | V |
| Drain-Source On-State Resistance (Note 3) | RDS(ON) | VGS=10V, ID=50A | - | 3.5 | 4.2 | m |
| Forward Transconductance | gFS | VDS=50V,ID=75A | - | 180 | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | VDS=25V,VGS=0V, f=1.0MHz | - | 8200 | - | pF |
| Output Capacitance | Coss | - | 760 | - | pF | |
| Reverse Transfer Capacitance | Crss | - | 680 | - | pF | |
| Switching Characteristics (Note 4) | ||||||
| Turn-on Delay Time | td(on) | VDD=30V, ID=40A, VGS=10V,RGEN=3 | - | 27 | - | nS |
| Turn-on Rise Time | tr | - | 25 | - | nS | |
| Turn-Off Delay Time | td(off) | - | 90 | - | nS | |
| Turn-Off Fall Time | tf | - | 40 | - | nS | |
| Total Gate Charge | Qg | VDS=60V,ID=40A VGS=10V | - | 186 | - | nC |
| Gate-Source Charge | Qgs | - | 46 | - | nC | |
| Gate-Drain Charge | Qgd | - | 70 | - | nC | |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=150A | - | - | 1.2 | V |
| Package Information | ||||||
| Device Marking | M04N06 | |||||
| Ordering Codes | Package | Product Code | Packing | |||
| TO-220 | BLM04N06-P | Tube | ||||
| TO-263 | BLM04N06-B | Reel | ||||
2410121342_BL-BLM04N06-P_C2924859.pdf
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