Power module AOS AIP3D10A060Q4 with controllable fault output signals and enable input functionality

Key Attributes
Model Number: AIP3D10A060Q4
Product Custom Attributes
Mfr. Part #:
AIP3D10A060Q4
Product Description

Product Overview

The AIP3D10A060Q4(N) is an intelligent power module designed for 3-phase inverter applications. It features a 600V-10A Trench Shielded Planar Gate IGBT, built-in bootstrap diodes with integrated current-limiting resistors, and comprehensive protection mechanisms including control supply under-voltage lockout (UVLO), controllable over-temperature protection (OT), temperature monitoring (VOT), and short-circuit current protection (CSC). The module offers controllable fault out signals (VCF) for various fault conditions and an enable input functionality for low-side IGBT shutdown. It is suitable for AC 100-240Vrms class low power motor drives, including applications in washing machines, compressors, and fan motors. The module boasts isolation ratings of 2000Vrms/min.

Product Attributes

  • Brand: AOS (Alpha & Omega Semiconductor)
  • Certifications: UL Recognized
  • Product Line: AOS Green Products (RoHS compliant, reduced Halogens)
  • Package: Dual-In-Line Package (IPM-3, IPM-3A)

Technical Specifications

Model External View Size Voltage Rating Current Rating Temperature Range Isolation Rating
AIP3D10A060Q4(N) 38 x 24 x 3.6 mm 600V 10A -40C to 150C 2000Vrms/min
Parameter Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
Inverter Supply Voltage (VPN) Applied between P - NU,NV,NW - - 450 V
Inverter Supply Voltage (surge) (VPN(surge)) Applied between P - NU,NV,NW - - 500 V
Collector-Emitter Voltage (VCES) - - - 600 V
Output Phase Current (IC) TC=25C, TJ<150C - - 10 A
Output Phase Current (IC) TC=80C, TJ<150C - - 7 A
Output Peak Phase Current (IPK) TC=25C, less than 1ms pulse width - - 20 A
Short Circuit Withstand Time (tSC) VPN400V, TJ=150C, VDD=15V - - 5 s
Collector Dissipation (PC) TC=25C, per chip - - 28 W
Operating Junction Temperature (TJ) - -40 - 150 C
Control Supply Voltage (VDD) Applied between VDD-COM - - 25 V
High-Side Control Bias Voltage (VDB) Applied between VB(U)-U, VB(V)-V, VB(W)-W - - 25 V
Input Voltage (VIN) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL) COM - - VDD+0.3 V
Fault Output Supply Voltage (VCF) Applied between VCF-COM - - COM+5.5 V
Fault Output Current (ICF) Sink current at VCF terminal - - 1 mA
Current Sensing Input Voltage (VSC) Applied between CSC-COM - - COM+5.5 V
Temperature Output (VOT) Applied between VOT-COM - - COM+5.5 V
Self Protection Supply Voltage Limit (VPN(PROT)) VDD=13.5-16.5V, Inverter part TJ=150C, Non-repetitive, less than 2s - - 400 V
Module Case Operation Temperature (TC) Measurement point of TC is provided in Figure 1 -30 - 125 C
Storage Temperature (TSTG) - -40 - 150 C
Isolation Voltage (VISO) 60Hz, sinusoidal, AC 1min, between connected all pins and heat sink plate - - 2000 Vrms
Thermal Resistance
Junction to Case (Rth(j-c)Q) Inverter IGBT (per 1/6 module) - - 4.5 K/W
Junction to Case (Rth(j-c)F) Inverter FWD (per 1/6 module) - - 6.9 K/W
Electrical Characteristics
Collector-Emitter Saturation Voltage (VCE(SAT)) VDD=VDB=15V, VIN=5V, IC=5A, TJ=25C - 1.5 2.0 V
Collector-Emitter Saturation Voltage (VCE(SAT)) VDD=VDB=15V, VIN=5V, IC=5A, TJ=125C - 1.65 - V
FWD Forward Voltage (VF) VIN=0, IF=5A, TJ=25C - 1.4 1.9 V
Switching Times (tON) VPN=300V, VDD=VDB=15V, IC=7A, TJ=25C, VIN=0V 5V, Inductive load - 0.40 0.70 s
Switching Times (tC(ON)) - - 0.10 0.4 s
Switching Times (tOFF) - - 1.20 1.70 s
Switching Times (tC(OFF)) - - 0.10 0.30 s
Switching Times (trr) - - 0.10 - s
Collector-Emitter Leakage Current (ICES) VCE=VCES, TJ=25C - - 1 mA
Collector-Emitter Leakage Current (ICES) VCE=VCES, TJ=125C - - 10 mA
Quiescent VDD Supply Current (IQDD) VDD=15V, IN(UH,VH,WH,UL,VL,WL) =0V - - 2.1 mA
Quiescent VDB Supply Current (IQDB) VDB=15V, IN(UH, VH, WH)=0V - - 0.3 mA
Short-Circuit Trip Level (VSC(ref)) VDD=15V 0.455 0.48 0.505 V
Supply Circuit Under-Voltage Protection Trip Level (UVDT) - 10.3 11.4 12.5 V
Reset Level (UVDR) - 10.8 11.9 13.0 V
Under-Voltage Protection Trip Level (UVDBT) - 8.5 9.5 10.5 V
Reset Level (UVDBR) - 9.5 10.5 11.5 V
Temperature Output (VOT) LVIC Temperature=90C 2.67 2.77 2.86 V
Temperature Output (VOT) LVIC Temperature=25C 0.8 1.05 1.3 V
Over-Temperature Protection Trip Level (OTT) OT Pin connected to VDD or open 100 120 140 C
Hysteresis of Trip Reset (OTHYS) - - 30 - C
Fault Output Voltage (VCFH) VSC=0V, VCF Circuit: 10k to 5V pull-up 4.9 - - V
Fault Output Voltage (VCFL) VSC=1V, VCF Circuit: 10k to 5V pull-up - - 0.5 V
Fault Output Positive Going Threshold (VCF+) - - 1.9 2.2 V
Fault Output Negative Going Threshold (VCF-) - 0.8 1.1 - V
Fault Output Pulse Width (tFO) Pull-up resistor only 20 - - s
Fault Output Pulse Width (tFO) Pull-up resistor with pull-down capacitor (RCF=2.2M, CCF=1nF, 5V pull-up) - 1 - ms
Input Current (IIN) VIN=5V - 0.72 - mA
ON Threshold Voltage (Vth(on)) Applied between IN(UH), IN(VH), IN(WH), IN(UL), IN(VL), IN(WL)-COM 2.3 2.6 - V
OFF Threshold Voltage (Vth(off)) - - - 1.2 V
ON/OFF Threshold Hysteresis Voltage (Vth(hys)) - - 1.1 - V
Bootstrap Diode Forward Voltage (VF(BSD)) IF=10mA, Including Voltage Drop by Limiting Resistor 0.5 1.0 1.5 V
Built-in Limiting Resistance (RBSD) Included in Bootstrap Diode 80 100 120
Recommended Operation Conditions
Supply Voltage (VPN) Applied between P-NU, NV, NW 0 300 400 V
Control Supply Voltage (VDD) Applied between VDD-COM 13.5 15.0 16.5 V
High-Side Bias Voltage (VDB) Applied between VB(U)-U, VB(V)-V, VB(W)-W 13.5 15.0 18.5 V
Control Supply Variation (dVDD/dt, dVDB/dt) - -1 - +1 V/s
Arm Shoot-Through Blocking Time (tdead) For each input signal 1.5 - - s
PWM Input Frequency (fPWM) -40C < TJ < 150C - - 20 kHz
Minimum Input Pulse Width (PWIN(ON)) - 0.5 - - s
Minimum Input Pulse Width (PWIN(OFF)) - 0.5 - - s
COM Variation Between COM-NU, NV, NW (including surge) -5.0 - 5.0 V

2411071613_AOS-AIP3D10A060Q4_C20266157.pdf

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