Depletion Mode Power MOSFET ARK micro DMZ6005EH with 600 Volt Rating and Fast Switching Performance
Key Attributes
Model Number:
DMZ6005EH
Product Custom Attributes
Drain To Source Voltage:
600V
Current - Continuous Drain(Id):
20mA
RDS(on):
500Ω@0V
Operating Temperature -:
-55℃~+150℃
Reverse Transfer Capacitance (Crss@Vds):
1.8pF@25V
Number:
1 N-channel
Output Capacitance(Coss):
2.6pF
Input Capacitance(Ciss):
12.3pF@5V
Pd - Power Dissipation:
500mW
Mfr. Part #:
DMZ6005EH
Package:
SOT-23
Product Description
DMZ6005EH Depletion-Mode Power MOSFET
The DMZ6005EH is a Depletion-Mode (Normally On) Power MOSFET from ARK Microelectronics, featuring ESD improved capability and a proprietary advanced planar technology with a rugged polysilicon gate cell structure. It offers fast switching speeds and is RoHS compliant, with a halogen-free option available.
Product Attributes
- Brand: ARK Microelectronics Co., Ltd.
- Origin: Chengdu, Sichuan
- Certifications: RoHS Compliant, Halogen-free available
Technical Specifications
| Symbol | Parameter | DMZ6005EH Unit | Test Conditions | Min. | Typ. | Max. |
| Absolute Maximum Ratings | ||||||
| VDSX | Drain-to-Source Voltage[1] | 600 V | TA =25 | |||
| VDGX | Drain-to-Gate Voltage[1] | 600 V | TA =25 | |||
| ID | Continuous Drain Current | 0.02 A | TA =25 | |||
| IDM | Pulsed Drain Current[2] | 0.08 A | TA =25 | |||
| PD | Power Dissipation | 0.50 W | TA =25 | |||
| VGS | Gate-to-Source Voltage | 20 V | TA =25 | |||
| TL | Soldering Temperature | 300 | Distance of 1.6mm from case for 10 seconds | |||
| TJ and TSTG | Operating and Storage Temperature Range | -55 to 150 | ||||
| Thermal Characteristics | ||||||
| RJA | Thermal Resistance, Junction-to-Ambient | 250 K/W | ||||
| OFF Characteristics | ||||||
| BVDSX | Drain-to-Source Breakdown Voltage | 600 V | VGS=-5V, ID=250A | 600 | ||
| ID(OFF) | Drain-to-Source Leakage Current | A | VDS=600VVGS= -5V | 0.1 | ||
| VDS=600VVGS= -5V TJ=125 | 10 | |||||
| IGSS | Gate-to-Source Leakage Current | A | VGS=+20V, VDS=0V | 20 | ||
| V | VGS=-20V, VDS=0V | -20 | ||||
| ON Characteristics | ||||||
| IDSS | Saturated Drain-to-Source Current | mA | VGS=0V, VDS=25V | 5 | 25 | |
| RDS(ON) | Static Drain-to-Source On-Resistance | VGS=0VID=3mA [3] | 500 | 700 | ||
| VGS(OFF) | Gate-to-Source Cut-off Voltage | V | VDS =3V, ID=8A | -2.39 | -1.96 | |
| gfs | Forward Transconductance | mS | VDS =10V, ID=5mA | 15.4 | ||
| Dynamic Characteristics | ||||||
| CISS | Input Capacitance | pF | VGS=-5V VDS=25V f=1.0MHZ | 12.3 | ||
| COSS | Oput Capacitance | pF | 2.6 | |||
| CRSS | Reverse Transfer Capacitance | pF | 1.8 | |||
| QG | Total Gate Charge | nC | VGS=-5V~5V VDS=300V, ID=7mA | 1.55 | ||
| QGS | Gate-to-Source Charge | nC | 0.12 | |||
| QGD | Gate-to-Drain (Miller) Charge | nC | 0.56 | |||
| Resistive Switching Characteristics | ||||||
| td(ON) | Turn-on Delay Time | ns | VGS = -5V~5V VDD = 300V, ID=7mA RG = 20 | 4 | ||
| trise | Rise Time | ns | 9 | |||
| td(OFF) | Turn-off Delay Time | ns | 14 | |||
| tfall | Fall Time | ns | 84 | |||
| Source-Drain Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | V | ISD =3.0 mA, VGS = -10 V | 1.2 | ||
2410121609_ARK-micro-DMZ6005EH_C5765936.pdf
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