Trench technology 30 volt n channel mosfet ASDsemi ASDM30N55E R for inverter system power management
Key Attributes
Model Number:
ASDM30N55E-R
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
55A
Operating Temperature -:
-55℃~+150℃
RDS(on):
4.8mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.5V@250uA
Reverse Transfer Capacitance (Crss@Vds):
305pF
Number:
1 N-channel
Output Capacitance(Coss):
410pF
Input Capacitance(Ciss):
3.105nF
Pd - Power Dissipation:
40W
Gate Charge(Qg):
31.6nC@10V
Mfr. Part #:
ASDM30N55E-R
Package:
DFN3.3x3.3-8
Product Description
Product Overview
The ASDM30N55E is a 30V N-CHANNEL MOSFET from Ascend Semiconductor Co., Ltd. Designed with advanced high cell density Trench technology, this device offers super low gate charge and excellent CdV/dt effect decline. It is 100% EAS guaranteed and available in a Green Device option. The MOSFET is suitable for power management applications in inverter systems.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Technology: Advanced high cell density Trench technology
- Certifications: 100% EAS Guaranteed, Green Device Available
- Package: DFN3.3*3.3-8
- Origin: China (implied by Xi'an Ascend Semiconductor)
Technical Specifications
| Symbol | Parameter | Condition | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings, at TA=25 C, unless otherwise specified | ||||||
| (BR)DSS | Drain-Source breakdown voltage | 30 | V | |||
| ID | Continuous drain current @VGS=10V | Tc =25C | 55 | A | ||
| ID | Continuous drain current @VGS=10V | Tc =100C | 35 | A | ||
| IDM | Pulse drain current tested | TA =25C | 110 | A | ||
| EAS | Avalanche energy, single pulsed | 105 | mJ | |||
| PD | Maximum power dissipation | Tc =25C | 40 | W | ||
| VGS | Gate-Source voltage | 20 | V | |||
| MSL | Level 3 | |||||
| TSTG,TJ | Storage and junction temperature range | -55 | 150 | C | ||
| Thermal Characteristics | ||||||
| RJL | Thermal Resistance, Junction-to-Lead | 40 | C/W | |||
| RJA | Thermal Resistance, Junction-to-Ambient | C/W | ||||
| Typical Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| (BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=250A | 30 | -- | -- | V |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V,VGS=0V (Tj=25) | -- | -- | 1 | A |
| IDSS | Zero Gate Voltage Drain Current | VDS=30V,VGS=0V (Tj=125) | -- | -- | 100 | A |
| IGSS | Gate-Body Leakage Current | VGS=20V,VDS=0V | -- | -- | 100 | nA |
| VGS(TH) | Gate Threshold Voltage | VDS=VGS,ID=250A | 1.0 | 1.5 | 2.5 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=10V, ID=30A | -- | 4.8 | 6 | m |
| RDS(ON) | Drain-Source On-State Resistance | VGS=4.5V, ID=20A | -- | 7.5 | 12 | m |
| Dynamic Electrical Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=15V,VGS=0V, f=1MHz | 3105 | pF | ||
| Coss | Output Capacitance | 410 | pF | |||
| Crss | Reverse Transfer Capacitance | 305 | pF | |||
| Rg | Gate Resistance | f=1MHz | -- | 1.6 | -- | |
| Qg | Total Gate Charge | VDS=15V,ID=15A, VGS=10V | -- | 31.6 | -- | nC |
| Qgs | Gate-Source Charge | -- | 6.07 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 13.8 | -- | nC | |
| Switching Characteristics @ TJ = 25C (unless otherwise stated) | ||||||
| td(on) | Turn-on Delay Time | VDD=15V, ID=20A, RG=1.5, VGS=10V | -- | 11.2 | -- | nS |
| tr | Turn-on Rise Time | -- | 49 | -- | nS | |
| td(off) | Turn-Off Delay Time | -- | 35 | -- | nS | |
| tf | Turn-Off Fall Time | -- | 7.8 | -- | nS | |
| Source- Drain Diode Characteristics@ TJ = 25C (unless otherwise stated) | ||||||
| VSD | Forward on voltage | ISD=2A,VGS=0V | -- | 0.8 | 1.0 | V |
| trr | Reverse Recovery Time | Tj=25,Isd=10A, VGS=0V, di/dt=500A/s | -- | 20 | -- | nS |
| Qrr | Reverse Recovery Charge | 11.5 | nC | |||
| Ordering and Marking Information | ||||||
| Device Marking | 30N55 | |||||
| Package | DFN3.3*3.3-8 | |||||
| Packaging | Tape&Reel | |||||
| Quantity | 5000 | |||||
| Package Dimensions (DFN3.3*3.3-8) | ||||||
| Symbol | Dimensions In Millimeters | Dimensions In Inches | Min. | Max. | Min. | Max. |
| A | 0.650 - 0.850 | 0.026 - 0.033 | ||||
| A1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| A2 | 2.900 - 3.100 | 0.114 - 0.122 | ||||
| D | 2.300 - 2.600 | 0.091 - 0.102 | ||||
| D1 | 3.150 - 3.450 | 0.124 - 0.136 | ||||
| E | 1.535 - 1.935 | 0.060 - 0.076 | ||||
| E1 | 0.550 - 0.750 | 0.022 - 0.030 | ||||
| E2 | 0.300 - 0.500 | 0.012 - 0.020 | ||||
| b | 0.180 - 0.480 | 0.007 - 0.019 | ||||
| e | 0.315 - 0.515 | 0.012 - 0.020 | ||||
| L | 0.152 REF. | 0.006 REF. | ||||
| L1 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| L2 | 0.000 | 0.100 | 0.000 | 0.004 | ||
| L3 | ||||||
| H | ||||||
| 9 - 13 | 9 - 13 | |||||
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Limited by TJmax, starting TJ = 25C, L = 0.1mH, RG = 25, IAS = 42A, VGS =10V.
Pulse width 300s; duty cycle 2%.
2410121912_ASDsemi-ASDM30N55E-R_C2758221.pdf
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