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quality High Reliability Silicon Carbide Schottky Diode Bestirpower BCH120S10D2 for Power Conversion Systems factory
quality High Reliability Silicon Carbide Schottky Diode Bestirpower BCH120S10D2 for Power Conversion Systems factory
quality High Reliability Silicon Carbide Schottky Diode Bestirpower BCH120S10D2 for Power Conversion Systems factory

High Reliability Silicon Carbide Schottky Diode Bestirpower BCH120S10D2 for Power Conversion Systems

Key Attributes
Model Number: BCH120S10D2
Product Custom Attributes
Non-Repetitive Peak Forward Surge Current:
59A
Reverse Leakage Current (Ir):
2uA@1200V
Operating Junction Temperature Range:
-55℃~+175℃
Voltage - DC Reverse (Vr) (Max):
1.2kV
Voltage - Forward(Vf@If):
1.43V@10A
Current - Rectified:
10A
Mfr. Part #:
BCH120S10D2
Package:
TO-220-2
Product Description

Product Overview

The BCH120S10D2 is a 1200V, 10A Silicon Carbide Schottky Diode from Bestirpower, leveraging advanced SiC diode technology. It offers excellent low forward voltage and robustness, making it suitable for applications demanding high power efficiency. Key benefits include higher frequency operation, reduced heat dissipation, smaller system size and cost, and high reliability. This diode is ideal for switch mode power supplies, solar inverters, data centers, and uninterruptible power supplies, featuring negligible reverse recovery, high-speed switching, and a positive temperature coefficient for temperature-independent switching.

Product Attributes

  • Brand: Bestirpower
  • Material: Silicon Carbide (SiC)
  • Technology: Schottky Diode
  • Compliance: RoHS compliant

Technical Specifications

Model VRRM (V) IF (A) TJ,max (C) QC (nC) Top Marking Package Packing Method Quantity
BCH120S10D2 1200 10 175 52 BCH120S10D2 TO247-2 Tube 50 units
Symbol Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (TC = 25 unless otherwise noted)
VRRM Repetitive Peak Reverse Voltage 1200 V
IF Forward Current TC = 25 35 A
IF Forward Current TC = 135 17 A
IF Forward Current TC = 158 10 A
IF,SM Non-Repetitive Forward Surge Current TC = 25, tp = 10 ms 59 A
IF,SM Non-Repetitive Forward Surge Current TC = 110, tp = 10 ms 45 A
IF,RM Repetitive Peak Forward Surge Current TC = 25, tp = 10 ms 50 A
I2dt I2dt value TC = 25, tp = 10 ms 17 As
I2dt I2dt value TC = 110, tp = 10 ms 10 As
Ptot Power Dissipation TC = 25 191 W
Ptot Power Dissipation TC = 110 83 W
Ptot Power Dissipation TC = 150 32 W
TJ,TSTG Operating Junction and Storage Temperature -55 +175
Thermal Characteristics
RJC Thermal Resistance, Junction to Case, Typ. 0.787 /W
Electrical Characteristics (TC = 25 unless otherwise noted)
VDC DC blocking voltage 1200 - - V
VF Forward Voltage IF=5A - 1.20 - V
VF Forward Voltage IF=10ATc=25 - 1.43 1.70 V
VF Forward Voltage IF=10ATc=175 - 2.0 - V
IR Reverse Current VR = 1200 V, TC = 25 - 2.0 60 A
IR Reverse Current VR = 1200 V, TC = 175 - 4.0 - A
QC Total Capacitive Charge VR = 800 V, TC = 25 - 52 - nC
C Total Capacitance VR = 1 V, f = 1MHz - 546 - pF
C Total Capacitance VR = 400 V, f = 1MHz - 47 - pF
C Total Capacitance VR = 800 V, f = 1MHz - 41 - pF
EC Capacitance Stored Energy VR = 800 V, TC = 25 - 15.86 - J

2504101957_Bestirpower-BCH120S10D2_C46472744.pdf

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