Silicon Carbide N Channel Power MOSFET Bestirpower BCW120N40M1 1200V for Industrial Power Applications
Key Attributes
Model Number:
BCW120N40M1
Product Custom Attributes
Drain To Source Voltage:
1.2kV
Current - Continuous Drain(Id):
60A
RDS(on):
40mΩ
Operating Temperature -:
-55℃~+175℃
Gate Threshold Voltage (Vgs(th)):
3V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF
Number:
1 N-channel
Output Capacitance(Coss):
125pF
Pd - Power Dissipation:
375W
Input Capacitance(Ciss):
1.96nF
Gate Charge(Qg):
109nC
Mfr. Part #:
BCW120N40M1
Package:
TO-247-3
Product Description
Product Overview
The BCW120N40M1 is a 1200V N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power applications. It offers system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed with low gate charge and fast intrinsic diode with low reverse recovery. This MOSFET is robust with tested avalanche capability and is compliant with Pb-free, Halogen-free, and RoHS standards. It is suitable for applications such as solar inverters, EV charging stations, UPS, and industrial power supplies.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide (SiC)
- Channel Type: N-Channel
- Certifications: Pb-free, Halogen Free, RoHS Compliant
- Package: TO-247-3
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDSS | Drain to Source Voltage | (TC = 25 unless otherwise noted) | 1200 | V | ||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| VGSop | Recommended Operation Value | -5 | +18 | V | ||
| ID | Drain Current Continuous (VGS=18V, TC = 25) | 60 | A | |||
| ID | Drain Current Continuous (VGS=18V, TC = 100) | 42 | A | |||
| IDM | Drain Current Pulsed (Note1) | 160 | A | |||
| EAS | Avalanche Capability | VDD=100V,VGS=20V,L=2mH | 1000 | mJ | ||
| IAV | Avalanche Capability | VDD=100V,VGS=20V,L=2mH | 30 | A | ||
| PD | Power Dissipation (TC = 25) | 375 | W | |||
| Derate Above 25 | 2.5 | W/ | ||||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| TL | Maximum Lead Temperature for Soldering, 1/8 from Case for 10 Seconds | 260 | ||||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 0.4 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 34 | ||||
| Electrical Characteristics (TC = 25 unless otherwise noted) | ||||||
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 1200 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 1200 V, VGS = 0 V, TJ = 175 | 100 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | +100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 10 mA | 2.0 | 3.0 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 30 A | 40 | 56 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 30 A, TJ = 175 | 51 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 30 A | 50 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 30 A, TJ = 150 | 53 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 15 V, ID = 30 A, TJ = 175 | 59 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 40 A | 40 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 40 A, TJ = 150 | 54 | m | ||
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 40 A, TJ = 175 | 58 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 30 A | 15 | S | ||
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VDS = 800 V, VGS = 0V, f = 250 kHz | 1960 | pF | ||
| Coss | Output Capacitance | 125 | pF | |||
| Crss | Reverse Capacitance | 5 | ||||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 800 V, VGS = 0 V | 50 | J | ||
| Co(er) | Energy Related Output Capacitance | 146 | pF | |||
| Co(tr) | Time Related Output Capacitance | 258 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V | 109 | nC | ||
| Qgs | Gate to Source Charge | 28 | nC | |||
| Qgd | Gate to Drain Miller Charge | 35 | nC | |||
| RG | Internal Gate Resistance | f = 1MHz, VAC=30mV | 3.5 | |||
| td(on) | Turn-On Delay Time | VDS = 800 V, ID = 30 A, VGS = -5 V / 18 V, RG = 2.5 , FWD : BCH120S020D1, Inductive load | 18 | ns | ||
| tr | Turn-On Rise Time | 13 | ns | |||
| td(off) | Turn-Off Delay Time | 35 | ns | |||
| tf | Turn-Off Fall Time | 8 | ns | |||
| Eon | Turn-on Switching Energy | 232 | J | |||
| Eoff | Turn-off Switching Energy | 73 | J | |||
| Etot | Total Switching Energy | 305 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 60 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 160 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 30 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 800 V, ISD = 30 A, dIF/dt = 3000 A/s | 22 | ns | ||
| Qrr | Reverse Recovery Charge | 348 | nC | |||
| trr | Reverse Recovery Time | VGS=-5V,VDD = 800 V, ISD = 40 A, dIF/dt = 4200 A/s | 13 | ns | ||
| Qrr | Reverse Recovery Charge | 182 | nC | |||
| IRRM | Peak Reverse Recovery Current | 23 | A | |||
| Package Marking and Ordering Information | ||||||
| Part Number | Top Marking | Package | Packing Method | Quantity | ||
| BCW120N40M1 | BCW120N40M1 | TO247-3 | Tube | 30 units | ||
2412021740_Bestirpower-BCW120N40M1_C42401697.pdf
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