Super Junction Power MOSFET Bestirpower BMF65N065UC1 650V 65m Ohm Low On Resistance TO220F Package
Key Attributes
Model Number:
BMF65N065UC1
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
55A
RDS(on):
65mΩ@10V
Operating Temperature -:
-
Gate Threshold Voltage (Vgs(th)):
3.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
5pF@100V
Number:
1 N-channel
Pd - Power Dissipation:
34W
Input Capacitance(Ciss):
3.99nF@100V
Output Capacitance(Coss):
120pF
Gate Charge(Qg):
73nC@10V
Mfr. Part #:
BMF65N065UC1
Package:
TO-220F
Product Description
Product Overview
The Bestirpower BMx65N065UC1 is a Super Junction Power MOSFET designed with advanced super junction technology. It offers very low on-resistance and gate charge, leading to high efficiency through optimized charge coupling. This user-friendly device also provides low EMI and low switching loss, making it suitable for demanding applications. Its ultra-fast body diode and high commutation ruggedness further enhance its performance and reliability.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
Technical Specifications
| Model | Part Number | Top Marking | Package | Packing Method | BVDSS (V) | ID, Tc=25 (A) | RDS(on),max. Tc=25 (m) | Qg,typ (nC) |
|---|---|---|---|---|---|---|---|---|
| BMx65N065UC1 | BMP65N065UC1 | BMx65N065UC1 650V 65m Power MOSFET | TO-220 | Tube | 650 | 55 | 65 | 73 |
| BMx65N065UC1 | BMF65N065UC1 | BMF65N065UC1 650V 65m Power MOSFET | TO-220F | Tube | 650 | 55 | 65 | 73 |
| BMx65N065UC1 | BMB65N065UC1 | BMB65N065UC1 650V 65m Power MOSFET | TO-263 | Tape & Reel | 650 | 55 | 65 | 73 |
| BMx65N065UC1 | BMW65N065UC1 | BMW65N065UC1 650V 65m Power MOSFET | TO-247 | Tube | 650 | 55 | 65 | 73 |
Applications
- PC power
- AC/DC power supply
- Telecom/Server
- Solar Invertor
- Super charger for automobiles
Features
- Ultra-fast body diode.
- Extremely low losses due to very low FOM Rdson*Qg and Eoss.
- Very high commutation ruggedness.
- Low EMI.
- Low switching loss.
Absolute Maximum Ratings
| Symbol | Parameter | Value | Unit |
|---|---|---|---|
| V DSS | Drain to Source Voltage | 650 | V |
| V GSS | Gate to Source Voltage | ±30 | V |
| I D | Drain Current (VGS = 10 V, TC= 25) | 55 | A |
| I D | Drain Current (VGS = 10 V, TC= 100) | 35 | A |
| I DM | Drain Current Pulsed | 165 | A |
| P D | Power Dissipation For TO-220F | 500 | W |
| P D | Power Dissipation For TO-220, TO-247, TO-263 | 165 | W |
| E AS | Single Pulsed Avalanche Energy | 1000 | mJ |
| dv/dt | Diode Recovery dv/dt | 50 | V/ns |
| T STG | Storage Temperature Range | -55 to 150 | |
| T J | Maximum Operating Junction Temperature | 150 | |
| T L | Maximum Lead Temperature for Soldering, 1/8 from Case | 260 | |
| I S | Continuous diode forward current (TC=25C) | 55 | A |
| I S,pulse | Diode pulse current | 165 | A |
Thermal Characteristics
| Package | Symbol | Parameter | Value | Unit |
|---|---|---|---|---|
| TO-220F (FullPAK) | RJC | Thermal Resistance, Junction to Case, max | 0.25 | /W |
| TO-220F (FullPAK) | RJA | Thermal Resistance, Junction to Ambient, max | 62 | /W |
| TO-220, TO-247, TO-263 (Non FullPAK) | RJC | Thermal Resistance, Junction to Case, max | 3.67 | /W |
| TO-220, TO-247, TO-263 (Non FullPAK) | RJA | Thermal Resistance, Junction to Ambient, max | 62.5 | /W |
Electrical Characteristics
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Off Characteristics | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1mA | 650 | - | - | V |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V TJ=25C | - | - | 10 | μA |
| IGSS | Gate-Source Leakage Current | VGS = ±30 V, VDS = 0 V | - | - | ±100 | nA |
| On Characteristics | ||||||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 1mA | 2.8 | - | - | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 10 V, ID = 23.5A TJ=25C | - | 58 | 65 | mΩ |
| Dynamic Characteristics | ||||||
| Ciss | Input Capacitance | VGS=0V, VDS=100V, f=250kHz | - | 3990 | - | pF |
| Coss | Output Capacitance | - | - | 120 | - | pF |
| Crss | Reverse Transfer Capacitance | - | - | 5 | - | pF |
| Qg | Total Gate Charge | VGS = 0 to 10V, VDD =400V, ID =25A | - | 73 | - | nC |
| Qgs | Gate to Source Charge | - | - | 18 | - | nC |
| Qgd | Gate to Drain “Miller” Charge | - | - | 23 | - | nC |
| Vplateau | Gate plateau voltage | - | 4.5 | - | - | V |
| RG | Gate Resistance | VDD = 0V, VGS= 0V, f = 1.0MHz | - | 3.5 | - | Ω |
| Switching Characteristics | ||||||
| td(on) | Turn-On Delay Time | VDD = 400V, ID = 23A, VGS = 10V | - | 66 | - | ns |
| tr | Turn-On Rise Time | - | - | 79 | - | ns |
| td(off) | Turn-Off Delay Time | - | - | 139 | - | ns |
| tf | Turn-Off Fall Time | - | - | 12 | - | ns |
| Reverse Diode Characteristics | ||||||
| VSD | Diode Forward Voltage | IF=23A, VGS = 0V TJ=25C | - | 0.9 | - | V |
| trr | Reverse Recovery Time | VR = 400V, IF =23A diF/dt = 100A/μs | - | 165 | - | ns |
| Qrr | Reverse Recovery Charge | - | - | 1.9 | - | μC |
| Irrm | Peak Reverse Recovery Current | - | - | 22 | - | A |
| Co(er) | Effective output capacitance, energy related | VDS= 0 to 400V | - | 3.8 | 4.8 | pF |
| Co(tr) | Effective output capacitance, time related | VDS= 0 to 400V | - | 125 | - | pF |
2509021810_Bestirpower-BMF65N065UC1_C51346555.pdf
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