40V N-Channel MOSFET ASDsemi ASDM40R009NQ-R featuring Pb free lead plating and excellent switching performance
Key Attributes
Model Number:
ASDM40R009NQ-R
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
200A
RDS(on):
1.4mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2V@250uA
Reverse Transfer Capacitance (Crss@Vds):
81pF
Number:
1 N-channel
Output Capacitance(Coss):
1.418nF
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
5.4nF
Gate Charge(Qg):
45nC@10V
Mfr. Part #:
ASDM40R009NQ-R
Package:
DFN-5(4.9x5.9)
Product Description
ASDM40R009NQ 40V N-Channel MOSFET
Product Overview
The ASDM40R009NQ is a 40V N-Channel MOSFET from Ascend Semiconductor Co., Ltd. It offers excellent gate charge x RDS(on) product (FOM) and very low on-resistance (RDS(on)). Designed for a 150 C operating temperature and featuring Pb-free lead plating, this MOSFET is 100% UIS tested. It is ideally suited for applications such as DC/DC converters, high-frequency switching, and synchronous rectification.
Product Attributes
- Brand: Ascend Semiconductor Co., Ltd.
- Product Type: N-Channel MOSFET
- Lead Plating: Pb-free
Technical Specifications
| Parameter | Symbol | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| General Features | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| On-Resistance | RDS(on) | VGS=10 V | 1.1 | m | ||
| Drain Current | ID | 200 | A | |||
| Operating Temperature | 150 | C | ||||
| Thermal Characteristic | ||||||
| Thermal Resistance, Junction-to-Case | RJC | 1.1 | /W | |||
| Absolute Maximum Ratings (TC=25 unless otherwise noted) | ||||||
| Drain-Source Voltage | VDS | 40 | V | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Drain Current-Continuous (Silicon Limited) | ID | 200 | A | |||
| Drain Current-Continuous (TC=100) | ID (100) | 145 | A | |||
| Pulsed Drain Current | IDM | 800 | A | |||
| Maximum Power Dissipation | PD | 114 | W | |||
| Single Pulse Avalanche Energy | EAS | 238 | mJ | |||
| Operating Junction and Storage Temperature Range | TJ,TSTG | -55 | 150 | |||
| Electrical Characteristics (TC=25 unless otherwise noted) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | VGS=0V, ID=250A | 40 | - | - | V |
| Zero Gate Voltage Drain Current | IDSS | VDS=40V,VGS=0V | - | - | 1 | A |
| Gate-Body Leakage Current | IGSS | VGS=20V,VDS=0V | - | - | 100 | nA |
| Gate Threshold Voltage | VGS(th) | VDS=VGS,ID=250A | 1.0 | - | 2.0 | V |
| Drain-Source On-State Resistance | RDS(ON) | VGS=10V, ID=100A | - | 1.1 | 1.4 | m |
| VGS=4.5V, ID=100A | - | 1.6 | 2.0 | m | ||
| Forward Transconductance | gFS | VDS=5V,ID=100A | 160 | - | - | S |
| Dynamic Characteristics | ||||||
| Input Capacitance | Clss | - | 5400 | - | PF | |
| Output Capacitance | Coss | - | 1418 | - | PF | |
| Reverse Transfer Capacitance | Crss | VDS=20V,VGS=0V, F=1.0MHz | - | 81 | - | PF |
| Switching Characteristics | ||||||
| Turn-on Delay Time | td(on) | - | 24 | - | nS | |
| Turn-on Rise Time | tr | - | - | - | nS | |
| Turn-Off Delay Time | td(off) | - | 62 | - | nS | |
| Turn-Off Fall Time | tf | VDD=20V,ID=100A, VGS=10V,RG=1.6 | - | 20 | - | nS |
| Total Gate Charge | Qg | - | 45 | - | nC | |
| Gate-Source Charge | Qgs | - | 15 | - | nC | |
| Gate-Drain Charge | Qgd | VDS=20V,ID=100A, VGS=10V | - | 18 | - | nC |
| Drain-Source Diode Characteristics | ||||||
| Diode Forward Voltage | VSD | VGS=0V,IS=100A | - | 0.8 | - | V |
| Diode Forward Current | IS | - | - | 200 | A | |
| Reverse Recovery Time | trr | - | 88 | - | nS | |
| Reverse Recovery Charge | Qrr | TJ = 25C, IF = IS, di/dt = 100A/s(Note3) | - | 185 | - | nC |
Ordering and Marking Information
| Package | MARKING | Ordering Device No. | Marking | Package | Packing | Quantity |
|---|---|---|---|---|---|---|
| DFN5*6-8 | ASDM40R009NQ 40V N-Channel MOSFET | ASDM40R009NQ-R | 40R009N | DFN5*6-8 | Tape&Reel | 4000/Reel |
| 40R009N | DFN5*6-8 |
Package Dimensions
DFN5x6_P, 8 Leads
2410121637_ASDsemi-ASDM40R009NQ-R_C2972875.pdf
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