High voltage 650V Silicon Carbide MOSFET Bestirpower BCBF65N45M1 45m on resistance power transistor
Key Attributes
Model Number:
BCBF65N45M1
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
44A
Operating Temperature -:
-55℃~+175℃
RDS(on):
45mΩ
Gate Threshold Voltage (Vgs(th)):
2.8V
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
9.1pF
Input Capacitance(Ciss):
1.048nF
Output Capacitance(Coss):
131pF
Pd - Power Dissipation:
150W
Gate Charge(Qg):
56nC
Mfr. Part #:
BCBF65N45M1
Package:
TO-263-7L
Product Description
Product Overview
The BCBF65N45M1 is a 650V, 45m N-Channel Silicon Carbide Power MOSFET designed for high-efficiency power conversion applications. It offers high switching speed with low gate charge, a fast intrinsic diode with low reverse recovery, and robust avalanche capability. This MOSFET is ideal for use in solar inverters, ESS, UPS, EV charging stations, server and telecom power supplies, and industrial power supplies, contributing to system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort.
Product Attributes
- Brand: Bestirpower
- Material: Silicon Carbide
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Model | Description | Voltage | Current | On-Resistance (Typ.) | Package |
|---|---|---|---|---|---|
| BCBF65N45M1 | N-Channel Silicon Carbide Power MOSFET | 650 V | 42 A | 45 m | TO-263-7L |
| Symbol | Parameter | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (TJ = 25 unless otherwise noted) | ||||||
| VDSS | Drain to Source Voltage | 650 | V | |||
| VGS | Gate to Source Voltage (DC) | -10 | +22 | V | ||
| ID | Drain Current | VGS = 18 V, (TC = 25) | 44 | A | ||
| ID | Drain Current | VGS = 18 V, (TC = 100) | 31 | A | ||
| IDM | Drain Current Pulsed (Note1) | 117 | A | |||
| PD | Power Dissipation (TC = 25) | 150 | W | |||
| TJ, TSTG | Operating and Storage Temperature Range | -55 | 175 | |||
| Thermal Characteristics | ||||||
| RJC | Thermal Resistance, Junction to Case, Max. | 1.0 | /W | |||
| RJA | Thermal Resistance, Junction to Ambient, Max. | 40 | /W | |||
| Tsold | Soldering temperature, wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics (TJ= 25 unless otherwise noted) | ||||||
| BVDSS | Drain to Source Breakdown Voltage | VGS = 0 V, ID = 1 mA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V | 1 | 100 | A | |
| IDSS | Zero Gate Voltage Drain Current | VDS = 650 V, VGS = 0 V, TJ = 175 | 100 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = +22 V, VDS = 0 V | 100 | nA | ||
| IGSS | Gate-Source Leakage Current | VGS = -10 V, VDS = 0 V | -100 | nA | ||
| VGS(th) | Gate Threshold Voltage | VGS = VDS, ID = 7 mA | 1.8 | 2.8 | 4.5 | V |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A | 45 | 63 | m | |
| RDS(on) | Static Drain to Source On Resistance | VGS = 18 V, ID = 20 A, TJ = 175 | 59 | m | ||
| gfs | Transconductance | VDS = 20 V, ID = 20 A | 13.4 | S | ||
| Ciss | Input Capacitance | VDS = 400 V, VGS = 0V, f = 1 MHz | 1048 | pF | ||
| Coss | Output Capacitance | 131 | pF | |||
| Crss | Reverse Capacitance | 9.1 | pF | |||
| Eoss | Stored Energy in Output Capacitance | VDS = 0 V to 400 V, VGS = 0 V | 13.0 | J | ||
| Co(er) | Energy Related Output Capacitance | 162.0 | pF | |||
| Co(tr) | Time Related Output Capacitance | 236 | pF | |||
| Qg(tot) | Total Gate Charge | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, Inductive load | 56 | nC | ||
| Qgs | Gate to Source Charge | 14 | nC | |||
| Qgd | Gate to Drain Miller Charge | 15 | nC | |||
| RG | Internal Gate Resistance | f = 1MHz, VAC=30mV | 4.0 | |||
| td(on) | Turn-On Delay Time | VDS = 400 V, ID = 20 A, VGS = -5 V / 18 V, RG = 2 , FWD : BCH65S012D1, Inductive load | 13 | ns | ||
| tr | Turn-On Rise Time | 10 | ns | |||
| td(off) | Turn-Off Delay Time | 26 | ns | |||
| tf | Turn-Off Fall Time | 5 | ns | |||
| Eon | Turn-on Switching Energy | 27 | J | |||
| Eoff | Turn-off Switching Energy | 18 | J | |||
| Etot | Total Switching Energy | 45 | J | |||
| Source-Drain Diode Characteristics | ||||||
| IS | Maximum Continuous Diode Forward Current | 42 | A | |||
| ISM | Maximum Pulsed Diode Forward Current | 117 | A | |||
| VSD | Diode Forward Voltage | VGS = -5 V, ISD = 20 A | 4.2 | V | ||
| trr | Reverse Recovery Time | VDD = 400 V, ISD = 20 A, dIF/dt = 1000 A/s, Includes QOSS | 17 | ns | ||
| Qrr | Reverse Recovery Charge | 104 | nC | |||
| Irrm | Peak Reverse Recovery Current | 10 | A | |||
2509021810_Bestirpower-BCBF65N45M1_C51346556.pdf
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