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quality N Channel Enhancement Mode Power MOSFET BL BLM3400 Pb Free Device for Battery Protection and Switching factory
quality N Channel Enhancement Mode Power MOSFET BL BLM3400 Pb Free Device for Battery Protection and Switching factory

N Channel Enhancement Mode Power MOSFET BL BLM3400 Pb Free Device for Battery Protection and Switching

Key Attributes
Model Number: BLM3400
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
59mΩ@2.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
77pF
Number:
1 N-channel
Input Capacitance(Ciss):
623pF
Output Capacitance(Coss):
99pF
Pd - Power Dissipation:
1.4W
Gate Charge(Qg):
9.5nC@4.5V
Mfr. Part #:
BLM3400
Package:
SOT-23
Product Description

Product Overview

The Belling BLM3400 is a Pb Free N-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON), low gate charge, and can operate with gate voltages as low as 2.5V. This device is suitable for battery protection and other switching applications, including PWM applications, load switches, and power management. It features high power and current handling capability.

Product Attributes

  • Brand: Belling
  • Product Type: N-Channel Enhancement Mode Power MOSFET
  • Pb Free Product: Yes
  • Package: SOT-23
  • Certifications: Pb Free

Technical Specifications

Parameter Symbol Condition Min Typ Max Unit
General Features
Drain-Source Voltage VDS 30 V
Continuous Drain Current ID 5.8 A
RDS(ON) VGS=2.5V 59 m
RDS(ON) VGS=4.5V 45 m
RDS(ON) VGS=10V 41 m
Absolute Maximum Ratings
Drain-Source Voltage VDS (TA=25) 30 V
Gate-Source Voltage VGS (TA=25) 12 V
Drain Current-Continuous ID (TA=25) 5.8 A
Drain Current-Pulsed IDM (Note 1) 30 A
Maximum Power Dissipation PD (TA=25) 1.4 W
Operating Junction and Storage Temperature Range TJ,TSTG -55 150
Thermal Characteristic
Thermal Resistance, Junction-to-Ambient RJA (Note 2) /W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 33 - V
Zero Gate Voltage Drain Current IDSS VDS=30V, VGS=0V - - 1 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V - - 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.7 0.9 1.4 V
Drain-Source On-State Resistance RDS(ON) VGS=2.5V, ID=4A - 45 59 m
Drain-Source On-State Resistance RDS(ON) VGS=4.5V, ID=2.9A - 34 45 m
Drain-Source On-State Resistance RDS(ON) VGS=10V, ID=2.9A - 31 41 m
Forward Transconductance gFS VDS=5V, ID=2.9A 10 - - S
Dynamic Characteristics
Input Capacitance Clss - 623 - pF
Output Capacitance Coss - 99 - pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, F=1.0MHz - 77 - pF
Switching Characteristics
Turn-on Delay Time td(on) VDD=15V, ID=2.9A, VGS=10V, RGEN=3 - 3.3 - nS
Turn-on Rise Time tr VDD=15V, ID=2.9A, VGS=10V, RGEN=3 - 4.8 - nS
Turn-Off Delay Time td(off) VDD=15V, ID=2.9A, VGS=10V, RGEN=3 - 26 - nS
Turn-Off Fall Time tf VDD=15V, ID=2.9A, VGS=10V, RGEN=3 - 4 - nS
Total Gate Charge Qg VDS=15V, ID=5.8A, VGS=4.5V - 9.5 - nC
Gate-Source Charge Qgs VDS=15V, ID=5.8A, VGS=4.5V - 1.5 - nC
Gate-Drain Charge Qgd VDS=15V, ID=5.8A, VGS=4.5V - 3 - nC
Drain-Source Diode Characteristics
Diode Forward Voltage VSD VGS=0V, IS=2.9A (Note 3) - 0.75 1.2 V
Diode Forward Current IS (Note 2) - - 2.9 A
Package Information (SOT-23)
Dimension A 0.900 1.150 mm
Dimension A1 0.000 0.100 mm
Dimension A2 0.900 1.050 mm
Dimension b 0.300 0.500 mm
Dimension c 0.080 0.150 mm
Dimension D 2.800 3.000 mm
Dimension E 1.200 1.400 mm
Dimension E1 2.250 2.550 mm
Dimension e 0.950 TYP mm
Dimension e1 1.800 2.000 mm
Dimension L 0.550 REF mm
Dimension L1 0.300 0.500 mm
Dimension 0 8

1810221832_BL-BLM3400_C169245.pdf
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