1200V 60A N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N40M1 for Industrial Power Systems

Name: 1200V 60A N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N40M1 for Industrial Power Systems
Brand: Hefei Purple Horn E-Commerce Co., Ltd.
SKU: BCZ120N40M1
Availability: InStock

Key Attributes

Model Number: BCZ120N40M1

Product Custom Attributes

Configuration:

Drain To Source Voltage:

1.2kV

Current - Continuous Drain(Id):

60A

Operating Temperature -:

-55℃~+175℃

RDS(on):

40mΩ

Gate Threshold Voltage (Vgs(th)):

Type:

N-Channel

Reverse Transfer Capacitance (Crss@Vds):

5pF

Output Capacitance(Coss):

125pF

Pd - Power Dissipation:

375W

Input Capacitance(Ciss):

1.96nF

Gate Charge(Qg):

109nC

Mfr. Part #:

BCZ120N40M1

Package:

TO-247-4L

Product Description

BCZ120N40M1 N-Channel Silicon Carbide Power MOSFET

The BCZ120N40M1 is a high-performance N-Channel Silicon Carbide Power MOSFET designed for demanding power applications. It offers a 1200V drain-to-source voltage, 60A continuous drain current, and a low on-resistance of 40m. This MOSFET provides significant advantages including system efficiency improvement, higher frequency applicability, increased power density, and reduced cooling effort due to its high switching speed, low gate charge, and fast intrinsic diode with low reverse recovery. Its robust avalanche capability, 100% avalanche tested, and compliance with Pb-free, Halogen Free, and RoHS standards make it a reliable choice for various industrial applications.

Product Overview

The BCZ120N40M1 is a 1200V, 60A, 40m N-Channel Silicon Carbide Power MOSFET. It is engineered to enhance system efficiency, enable higher operating frequencies, and increase power density while reducing cooling requirements. Key features include high switching speed with low gate charge, a fast intrinsic diode with minimal reverse recovery, and robust avalanche capability. This MOSFET is ideal for applications such as solar inverters, EV charging stations, UPS systems, and industrial power supplies.

Product Attributes

Brand: Bestirpower
Material: Silicon Carbide
Certifications: Pb-free, Halogen Free, RoHS Compliant

Technical Specifications

Symbol	Parameter	Test Conditions	Min	Typ	Max	Unit
Absolute Maximum Ratings
V_DSS	Drain to Source Voltage	(TC = 25 unless otherwise noted)			1200	V
V_GS	Gate to Source Voltage (DC)		-10		+22	V
V_GSop	Recommended Operation Value		-5		+18	V
I_D	Drain Current Continuous (V_GS=18V, T_C = 25)				60	A
I_D	Drain Current Continuous (V_GS=18V, T_C = 100)				42	A
I_DM	Drain Current Pulsed (Note1)				160	A
E_AS	Avalanche Capability	V_DD=100V, V_GS=20V, L=2mH			1000	mJ
I_AV	Avalanche Capability	V_DD=100V, V_GS=20V, L=2mH			30	A
P_D	Power Dissipation (T_C = 25)				375	W
	Derate Above 25				2.5	W/
T_J, T_STG	Operating and Storage Temperature Range		-55		175
Electrical Characteristics (T_C = 25 unless otherwise noted)
Off Characteristics
B_VDSS	Drain to Source Breakdown Voltage	V_GS = 0 V, I_D = 1 mA	1200			V
I_DSS	Zero Gate Voltage Drain Current	V_DS = 1200 V, V_GS = 0 V		1	100	A
I_DSS	Zero Gate Voltage Drain Current	V_DS = 1200 V, V_GS = 0 V, T_J = 175			5	A
I_GSS	Gate-Source Leakage Current	V_GS = +22 V, V_DS = 0 V			+100	nA
I_GSS	Gate-Source Leakage Current	V_GS = -10 V, V_DS = 0 V			-100	nA
On Characteristics
V_GS(th)	Gate Threshold Voltage	V_GS = V_DS, I_D = 10 mA	2.0	3.0	4.5	V
R_DS(on)	Static Drain to Source On Resistance	V_GS = 18 V, I_D = 30 A		40	56	m
R_DS(on)	Static Drain to Source On Resistance	V_GS = 18 V, I_D = 40 A		40		m
g_fs	Transconductance	V_DS = 20 V, I_D = 30 A		15		S
Dynamic Characteristics
C_iss	Input Capacitance	V_DS = 800 V, V_GS = 0V, f = 250 kHz		1960		pF
C_oss	Output Capacitance			125		pF
C_rss	Reverse Capacitance			5		pF
E_oss	Stored Energy in Output Capacitance	V_DS = 0 V to 800 V, V_GS = 0 V		50		J
Q_g(tot)	Total Gate Charge	V_DS = 800 V, I_D = 30 A, V_GS = -5 V / 18 V		109		nC
Source-Drain Diode Characteristics
I_S	Maximum Continuous Diode Forward Current				60	A
I_SM	Maximum Pulsed Diode Forward Current				160	A
V_SD	Diode Forward Voltage	V_GS = -5 V, I_SD = 30 A		4.2		V
t_rr	Reverse Recovery Time	V_DD = 800 V, I_SD = 30 A, dI_F/dt = 3000 A/s		22		ns
Q_rr	Reverse Recovery Charge	V_DD = 800 V, I_SD = 30 A, dI_F/dt = 3000 A/s		348		nC
t_rr	Reverse Recovery Time	V_GS=-5V, V_DD = 800 V, I_SD = 40 A, dI_F/dt = 4200 A/s		13		ns
Q_rr	Reverse Recovery Charge	V_GS=-5V, V_DD = 800 V, I_SD = 40 A, dI_F/dt = 4200 A/s		182		nC
I_rrm	Peak Reverse Recovery Current				23	A
Thermal Resistance
R_JC	Thermal Resistance, Junction to Case, Max.				0.4	/W
R_JA	Thermal Resistance, Junction to Ambient, Max.			34		/W
Soldering Conditions
T_sold	Soldering temperature, wave soldering only allowed at leads				260

Applications

Solar inverter
EV charging station
UPS
Industrial power supply

Package Information

Package Outlines: TO247-4L

Dimensions (in millimeters):

SYMBOL	MIN	NOM	MAX
A	4.80	5.00	5.20
A1	2.21	2.41	2.61
A2	1.80	2.00	2.20
b	1.06	1.21	1.36
b1	2.33	2.63	2.93
b3	1.07	1.30	1.60
c	0.51	0.61	0.75
D	23.30	23.45	23.60
D1	16.25	16.55	16.85
E	15.74	15.94	16.14
E1	13.72	14.02	14.32
T1	2.35	2.50	2.65
e	2.54	BSC
e1	5.08	BSC
Q	5.49	5.79	6.09
L	17.27	17.57	17.87
L1	3.99	4.19	4.39
p	3.40	3.60	3.80
p1	7.19	REF

Package Marking and Ordering Information

Part Number	Top Marking	Package	Packing Method	Quantity
BCZ120N40M1	BCZ120N40M1	TO247-4L	Tube	30 units

2504141435_Bestirpower-BCZ120N40M1_C47715865.pdf

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1200V 60A N Channel Silicon Carbide Power MOSFET Bestirpower BCZ120N40M1 for Industrial Power Systems