Lead Free P Channel Power MOSFET BL BLM9435 with Low RDS ON and Enhanced Switching Performance

Key Attributes
Model Number: BLM9435
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.1A
RDS(on):
105mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
150pF
Number:
1 P-Channel
Output Capacitance(Coss):
420pF
Input Capacitance(Ciss):
1.04nF
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
12nC@10V
Mfr. Part #:
BLM9435
Package:
SOP-8
Product Description

Product Overview

The Belling BLM9435 is a P-Channel Enhancement Mode Power MOSFET designed with advanced trench technology. It offers excellent RDS(ON) and low gate charge, with operation possible at gate voltages as low as 4.5V. This device is well-suited for use as a load switch or in Pulse Width Modulation (PWM) applications, providing high power and current handling capability. It is a lead-free product.

Product Attributes

  • Brand: Belling
  • Product Type: P-Channel Enhancement Mode Power MOSFET
  • Technology: Advanced Trench Technology
  • Certifications: Pb Free Product
  • Package: SOP-8

Technical Specifications

Parameter Symbol Condition Limit Unit
General Features
Drain-Source Voltage VDS -30 V
Continuous Drain Current ID -5.1 A
RDS(ON) VGS=-4.5V < 105 m
RDS(ON) VGS=-10V < 55 m
High Power and current handling capability
Lead free product is acquired
Surface Mount Package
Applications
PWM applications
Load switch
Power management
Absolute Maximum Ratings
Drain-Source Voltage VDS TA=25unless otherwise noted -30 V
Gate-Source Voltage VGS TA=25unless otherwise noted 20 V
Drain Current-Continuous ID TA=25unless otherwise noted -5.1 A
Drain Current-Pulsed (Note 1) IDM TA=25unless otherwise noted -20 A
Maximum Power Dissipation PD TA=25unless otherwise noted 2.5 W
Operating Junction and Storage Temperature Range TJ,TSTG TA=25unless otherwise noted -55 To 150
Thermal Characteristic
Thermal Resistance,Junction-to-Ambient (Note 2) RJA 50 /W
Electrical Characteristics
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 V
-33 V
Zero Gate Voltage Drain Current IDSS VDS=-24V,VGS=0V -1 A
Gate-Body Leakage Current IGSS VGS=20V,VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS,ID=-250A -1 V
-1.6 V
-3 V
Drain-Source On-State Resistance RDS(ON) VGS=-10V, ID=-5.1A 48 m
55 m
VGS=-4.5V, ID=-4.2A 73 m
105 m
Forward Transconductance gFS VDS=-15V,ID=-4.5A 4 S
7 S
Dynamic Characteristics
Input Capacitance Clss 1040 PF
Output Capacitance Coss 420 PF
Reverse Transfer Capacitance Crss VDS=-15V,VGS=0V, F=1.0MHz 150 PF
Switching Characteristics
Turn-on Delay Time td(on) VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 15 nS
Turn-on Rise Time tr VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 13 nS
Turn-Off Delay Time td(off) VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 58 nS
Turn-Off Fall Time tf VDD=-15V, ID=-1A, VGS=-10V,RGEN=6 21 nS
Total Gate Charge Qg VDS=-15V,ID=-5.1A,VGS=-10V 12 nC
Gate-Source Charge Qgs VDS=-15V,ID=-5.1A,VGS=-10V 2.2 nC
Gate-Drain Charge Qgd VDS=-15V,ID=-5.1A,VGS=-10V 3 nC
Drain-Source Diode Characteristics
Diode Forward Voltage (Note 3) VSD VGS=0V,IS=-1.7A -1.2 V

Notes:

  • 1. Repetitive Rating: Pulse width limited by maximum junction temperature.
  • 2. Surface Mounted on FR4 Board, t 10 sec.
  • 3. Pulse Test: Pulse Width 300s, Duty Cycle 2%.
  • 4. Guaranteed by design, not subject to production testing.

Device Marking And Ordering Information:

Device Marking Device Package Reel Size Tape width Quantity
9435 BLM9435 SOP-8 330mm 12mm 2500 units

2201121530_BL-BLM9435_C2932560.pdf
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