Bestirpower BMF65N340E2 Super Junction Power MOSFET suitable for chargers and power factor correction

Key Attributes
Model Number: BMF65N340E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
12A
RDS(on):
340mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF
Number:
1 N-channel
Input Capacitance(Ciss):
801pF
Output Capacitance(Coss):
28pF
Gate Charge(Qg):
19nC@10V
Mfr. Part #:
BMF65N340E2
Package:
TO-220F
Product Description

BMF65N340E2 Super Junction Power MOSFET

Product Overview
The BMF65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve exceptionally low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling, providing designers with the advantages of low EMI and reduced switching losses. Ideal for demanding power applications, it ensures reliable performance and enhanced system efficiency.

Applications

  • Switch Mode Power Supply (SMPS)
  • Uninterruptible Power Supply (UPS)
  • Power Factor Correction (PFC)
  • Charger

Features

  • Reduced Switching & Conduction Losses
  • Lower Switching Noise
  • 100% Avalanche Tested
  • Halogen Free, and RoHS Compliant

Product Attributes

  • Brand: Bestirpower
  • Technology: Super Junction Power MOSFET
  • Certifications: Halogen Free, RoHS Compliant

Technical Specifications

Parameter Test Conditions Min Typ Max Unit Notes
Absolute Maximum Ratings
Drain to Source Voltage (VDSS) 650 V
Gate to Source Voltage (VGSS) 30 V
Drain Current (ID) (continuous) VGS=10V, TC = 25 12 A Fig 10
Drain Current (ID) (continuous) VGS=10V, TC = 100 7.6 A
Drain Current Pulsed (IDM) 36 A Note1
Single Pulsed Avalanche Energy (EAS) 245 mJ Note2
Avalanche Current (IAS) 7 A Note2
MOSFET dv/dt 50 V/ns
Peak Diode Recovery dv/dt 15 V/ns Note3
Power Dissipation (PD) TC = 25 30 W Fig 11
Derate Above 25 0.24 W/
Operating and Storage Temperature Range (TJ, TSTG) -55 150
Thermal Characteristics
Thermal Resistance, Junction to Case (RJC) Max. 4.1 /W
Thermal Resistance, Junction to Ambient (RJA) Max. 62 /W
Soldering temperature (Tsold) wave soldering only allowed at leads 260
Electrical Characteristics TJ = 25 unless otherwise noted
Drain to Source Breakdown Voltage (BVDSS) VGS = 0 V, ID = 250 uA 650 - - V Fig 7
Zero Gate Voltage Drain Current (IDSS) VDS = 650 V, VGS = 0 V - - 1 A
Gate-Source Leakage Current (IGSS) VGS = 30 V, VDS = 0 V - - 100 nA
Gate Threshold Voltage (VGS(th)) VGS = VDS, ID = 250 uA 2.0 3.0 4.0 V Fig 9
Static Drain to Source On Resistance (RDS(on)) VGS = 10 V, ID = 4.8 A, TJ = 25 - 315 340 m Fig 3
Static Drain to Source On Resistance (RDS(on)) VGS = 10 V, ID = 4.8 A, TJ = 150 - 790 850 m Fig 8
Input Capacitance (Ciss) VDS = 400 V, VGS = 0 V, f = 1 MHz - 801 - pF Fig 5
Output Capacitance (Coss) - 28 - pF
Reverse transfer capacitance (Crss) - 3.8 - pF
Total Gate Charge (Qg(tot)) at 10 V VDS = 400 V, ID =5.5 A, VGS = 10 V - 19 - nC Fig 6
Gate to Source Charge (Qgs) - 2.9 - nC
Gate to Drain Miller Charge (Qgd) - 9.7 - nC
Gate Resistance (RG) f = 1 MHz, Open Drain - 5.6 -
Turn-On Delay Time (td(on)) VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 - 16 - ns
Turn-On Rise Time (tr) - 6 - ns
Turn-Off Delay Time (td(off)) - 29 - ns
Turn-Off Fall Time (tf) - 22 - ns
Source-Drain Diode Characteristics
Maximum Continuous Diode Forward Current (IS) - - 12 A
Maximum Pulsed Diode Forward Current (ISM) - - 36 A
Diode Forward Voltage (VSD) VGS = 0 V, ISD = 11 A - 0.9 1.2 V Fig 4
Reverse Recovery Time (trr) VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s - 198 - ns
Reverse Recovery Charge (Qrr) - 1.93 - C

Package Information

Part Number Top Marking Package Packing Method Quantity
BMF65N340E2 BMF65N340E2 TO220F Tube 50 units

2506162235_Bestirpower-BMF65N340E2_C49164824.pdf
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