Bestirpower BMF65N340E2 Super Junction Power MOSFET suitable for chargers and power factor correction
BMF65N340E2 Super Junction Power MOSFET
Product Overview
The BMF65N340E2 is a Super Junction Power MOSFET from Bestirpower, engineered with advanced technology to achieve exceptionally low on-resistance and gate charge. This device offers significantly higher efficiency through optimized charge coupling, providing designers with the advantages of low EMI and reduced switching losses. Ideal for demanding power applications, it ensures reliable performance and enhanced system efficiency.
Applications
- Switch Mode Power Supply (SMPS)
- Uninterruptible Power Supply (UPS)
- Power Factor Correction (PFC)
- Charger
Features
- Reduced Switching & Conduction Losses
- Lower Switching Noise
- 100% Avalanche Tested
- Halogen Free, and RoHS Compliant
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
Technical Specifications
| Parameter | Test Conditions | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| Drain to Source Voltage (VDSS) | 650 | V | ||||
| Gate to Source Voltage (VGSS) | 30 | V | ||||
| Drain Current (ID) (continuous) | VGS=10V, TC = 25 | 12 | A | Fig 10 | ||
| Drain Current (ID) (continuous) | VGS=10V, TC = 100 | 7.6 | A | |||
| Drain Current Pulsed (IDM) | 36 | A | Note1 | |||
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | Note2 | |||
| Avalanche Current (IAS) | 7 | A | Note2 | |||
| MOSFET dv/dt | 50 | V/ns | ||||
| Peak Diode Recovery dv/dt | 15 | V/ns | Note3 | |||
| Power Dissipation (PD) | TC = 25 | 30 | W | Fig 11 | ||
| Derate Above 25 | 0.24 | W/ | ||||
| Operating and Storage Temperature Range (TJ, TSTG) | -55 | 150 | ||||
| Thermal Characteristics | ||||||
| Thermal Resistance, Junction to Case (RJC) Max. | 4.1 | /W | ||||
| Thermal Resistance, Junction to Ambient (RJA) Max. | 62 | /W | ||||
| Soldering temperature (Tsold) | wave soldering only allowed at leads | 260 | ||||
| Electrical Characteristics | TJ = 25 unless otherwise noted | |||||
| Drain to Source Breakdown Voltage (BVDSS) | VGS = 0 V, ID = 250 uA | 650 | - | - | V | Fig 7 |
| Zero Gate Voltage Drain Current (IDSS) | VDS = 650 V, VGS = 0 V | - | - | 1 | A | |
| Gate-Source Leakage Current (IGSS) | VGS = 30 V, VDS = 0 V | - | - | 100 | nA | |
| Gate Threshold Voltage (VGS(th)) | VGS = VDS, ID = 250 uA | 2.0 | 3.0 | 4.0 | V | Fig 9 |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 10 V, ID = 4.8 A, TJ = 25 | - | 315 | 340 | m | Fig 3 |
| Static Drain to Source On Resistance (RDS(on)) | VGS = 10 V, ID = 4.8 A, TJ = 150 | - | 790 | 850 | m | Fig 8 |
| Input Capacitance (Ciss) | VDS = 400 V, VGS = 0 V, f = 1 MHz | - | 801 | - | pF | Fig 5 |
| Output Capacitance (Coss) | - | 28 | - | pF | ||
| Reverse transfer capacitance (Crss) | - | 3.8 | - | pF | ||
| Total Gate Charge (Qg(tot)) at 10 V | VDS = 400 V, ID =5.5 A, VGS = 10 V | - | 19 | - | nC | Fig 6 |
| Gate to Source Charge (Qgs) | - | 2.9 | - | nC | ||
| Gate to Drain Miller Charge (Qgd) | - | 9.7 | - | nC | ||
| Gate Resistance (RG) | f = 1 MHz, Open Drain | - | 5.6 | - | ||
| Turn-On Delay Time (td(on)) | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 | - | 16 | - | ns | |
| Turn-On Rise Time (tr) | - | 6 | - | ns | ||
| Turn-Off Delay Time (td(off)) | - | 29 | - | ns | ||
| Turn-Off Fall Time (tf) | - | 22 | - | ns | ||
| Source-Drain Diode Characteristics | ||||||
| Maximum Continuous Diode Forward Current (IS) | - | - | 12 | A | ||
| Maximum Pulsed Diode Forward Current (ISM) | - | - | 36 | A | ||
| Diode Forward Voltage (VSD) | VGS = 0 V, ISD = 11 A | - | 0.9 | 1.2 | V | Fig 4 |
| Reverse Recovery Time (trr) | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s | - | 198 | - | ns | |
| Reverse Recovery Charge (Qrr) | - | 1.93 | - | C |
Package Information
| Part Number | Top Marking | Package | Packing Method | Quantity |
|---|---|---|---|---|
| BMF65N340E2 | BMF65N340E2 | TO220F | Tube | 50 units |
2506162235_Bestirpower-BMF65N340E2_C49164824.pdf
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