650V 11A Super Junction Power MOSFET Bestirpower BMD65N380E2 with Low On Resistance and Gate Charge
Key Attributes
Model Number:
BMD65N380E2
Product Custom Attributes
Drain To Source Voltage:
650V
Current - Continuous Drain(Id):
10.5A
RDS(on):
380mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
3.8pF@400V
Pd - Power Dissipation:
114W
Input Capacitance(Ciss):
801pF@400V
Gate Charge(Qg):
19nC
Mfr. Part #:
BMD65N380E2
Package:
DPAK
Product Description
Product Overview
The BMD65N380E2 is a 650V, 11A, 380m Super Junction Power MOSFET from Bestirpower, leveraging advanced super junction technology for very low on-resistance and gate charge. This device is designed to achieve high efficiency through optimized charge coupling technology, offering designers the advantages of Low EMI and reduced switching losses. It is ideally suited for applications such as Switch Mode Power Supply (SMPS), Uninterruptible Power Supply (UPS), Power Factor Correction (PFC), and Chargers.
Product Attributes
- Brand: Bestirpower
- Technology: Super Junction Power MOSFET
- Certifications: Halogen Free, RoHS Compliant
- Testing: 100% Avalanche Tested
Technical Specifications
| Parameter | Value | Unit | Notes |
|---|---|---|---|
| Model | BMD65N380E2 | - | - |
| Drain to Source Voltage (BVDSS @ TJ,max) | 700 | V | - |
| Drain Current (ID) | 11 | A | Continuous, VGS=10V, TC = 25 |
| On-Resistance (RDS(on),max) | 380 | m | - |
| Total Gate Charge (Qg,typ) | 19 | nC | - |
| Drain to Source Voltage (VDSS) | 650 | V | - |
| Gate to Source Voltage (VGSS) | 30 | V | - |
| Drain Current (continuous) (ID) | 11 | A | VGS=10V, TC = 25 (Fig 10) |
| Drain Current (continuous) (ID) | 7.4 | A | VGS=10V, TC = 100 |
| Drain Current Pulsed (IDM) | 33 | A | (Note1) |
| Single Pulsed Avalanche Energy (EAS) | 245 | mJ | (Note2) |
| Avalanche Current (IAS) | 7 | A | (Note2) |
| MOSFET dv/dt | 50 | V/ns | - |
| Peak Diode Recovery dv/dt | - | V/ns | (Note3) |
| Power Dissipation (PD) | 114 | W | TC = 25 (Fig 11) |
| Derate Above 25 | 0.9 | W/ | - |
| Operating and Storage Temperature Range (TJ, TSTG) | -55 to 150 | - | |
| Thermal Resistance, Junction to Case (RJC), Max. | 1.1 | /W | - |
| Thermal Resistance, Junction to Ambient (RJA), Max. | 62 | /W | - |
| Soldering temperature (Tsold) | 260 | wave soldering only allowed at leads | |
| Drain to Source Breakdown Voltage (BVDSS) | 650 | V | VGS = 0 V, ID = 250 uA (Fig 7) |
| Zero Gate Voltage Drain Current (IDSS) | 1 | A | VDS = 650 V, VGS = 0 V |
| Gate-Source Leakage Current (IGSS) | 100 | nA | VGS = 30 V, VDS = 0 V |
| Gate Threshold Voltage (VGS(th)) | 2.0 - 4.0 | V | VGS = VDS, ID = 250 uA (Fig 9) |
| Static Drain to Source On Resistance (RDS(on)) | 325 - 380 | m | VGS = 10 V, ID = 4.8 A, TJ = 25 (Fig 3) |
| Static Drain to Source On Resistance (RDS(on)) | 813 - 950 | m | VGS = 10 V, ID = 4.8 A, TJ = 150 (Fig 8) |
| Input Capacitance (Ciss) | 801 | pF | VDS = 400 V, VGS = 0 V, f = 1 MHz (Fig 5) |
| Output Capacitance (Coss) | 28 | pF | - |
| Reverse transfer capacitance (Crss) | 3.8 | pF | - |
| Total Gate Charge (Qg(tot)) | 19 | nC | at 10 V, VDS = 400 V, ID=5.5 A, VGS = 10 V (Fig 6) |
| Gate to Source Charge (Qgs) | 2.9 | nC | - |
| Gate to Drain Miller Charge (Qgd) | 9.7 | nC | - |
| Gate Resistance (RG) | 5.6 | f = 1 MHz, Open Drain | |
| Turn-On Delay Time (td(on)) | 16 | ns | VDS = 400 V, ID = 5.5 A, VGS = 10 V, RG = 10 |
| Turn-On Rise Time (tr) | 6 | ns | - |
| Turn-Off Delay Time (td(off)) | 29 | ns | - |
| Turn-Off Fall Time (tf) | 22 | ns | - |
| Maximum Continuous Diode Forward Current (IS) | 11 | A | - |
| Maximum Pulsed Diode Forward Current (ISM) | 33 | A | - |
| Diode Forward Voltage (VSD) | 0.9 - 1.2 | V | VGS = 0 V, ISD = 11 A (Fig 4) |
| Reverse Recovery Time (trr) | 198 | ns | VDD = 400 V, ISD = 5.5A, dIF/dt = 100 A/s |
| Reverse Recovery Charge (Qrr) | 1.93 | C | - |
| Package Type | DPAK | - | - |
| Packing Method | Tape & Reel | - | 2500 units |
2506162235_Bestirpower-BMD65N380E2_C49164819.pdf
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