Compact SOT23 Silicon PNP Transistor BLUE ROCKET PBSS5320T for Supply Line and Muting Applications

Key Attributes
Model Number: PBSS5320T
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
1.2W
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
1 PNP
Current - Collector(Ic):
2A
Collector - Emitter Voltage VCEO:
20V
Operating Temperature:
-
Mfr. Part #:
PBSS5320T
Package:
SOT-23
Product Description

Product Overview

The PBSS5320T is a Silicon PNP transistor housed in a SOT-23 plastic package. It is designed for general-purpose switching and muting applications, LCD back-lighting, and supply line switching circuits. This transistor offers low VCE(sat) and high current capabilities, making it suitable for demanding applications.

Product Attributes

  • Brand: Fsb (implied by URL http://www.fsbrec.com)
  • Package Type: SOT-23
  • Transistor Type: PNP Silicon
  • Marking Code: HZH

Technical Specifications

Parameter Symbol Rating Unit
Collector to Base Voltage VCBO -20 V
Collector to Emitter Voltage VCEO -20 V
Emitter to Base Voltage VEBO -5.0 V
Collector Current IC -2.0 A
Peak Collector Current ICM -5.0 A
Base Current IB -0.5 A
Total Power Dissipation (Note 2) Ptot(1) 300 mW
Total Power Dissipation (Note 1, 2) Ptot(2) 1.2 W
Junction Temperature Tj 150
Storage Temperature Range Tstg -55150

Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cut-Off Current ICBO VCB=-20V, IE=0 -0.1 A
Collector Cut-Off Current ICBO VCB=-20V, IE=0, Tj=150 -50 A
Emitter Cut-Off Current IEBO VEB=-5.0V, IC=0 -0.1 A
DC Current Gain hFE(1) VCE=-2.0V, IC=-500mA 220 450
DC Current Gain hFE(2) VCE=-2.0V, IC=-100mA 220
DC Current Gain hFE(3) VCE=-2.0V, IC=-1.0A 200
DC Current Gain hFE(4) VCE=-2.0V, IC=-2.0A 150
DC Current Gain hFE(5) VCE=-2.0V, IC=-3.0A 100
Collector-Emitter Saturation Voltage VCE(sat)(1) IC=-500mA, IB=-50mA -100 mV
Collector-Emitter Saturation Voltage VCE(sat)(2) IC=-2.0A, IB=-100mA -300 mV
Equivalent on-resistance RCE(sat) IC=-2.0A, IB=-200mA 125 150 m
Base-Emitter Saturation Voltage VBE(sat) IC=-2.0A, IB=-100mA -1.1 V
Base-Emitter Saturation Voltage VBE(sat) IC=-3.0A, IB=-300mA -1.2 V
Base-Emitter Voltage VBE(ON) VCE=-2.0V, IC=-1.0A -1.2 V
Transition Frequency fT VCE=-5.0V, IC=-100mA, f=100MHz 100 MHz
Collector Capacitance CC VCB=-10V, IE=0, f=1.0MHz 50 pF

Package Dimensions

Dimensions for SOT-23 package are provided in the datasheet (Page 4).

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimensions (mm)
SOT-23 3,000 10 30,000 6 180,000 78 (Reel), 180120180 (Inner Box), 390385205 (Outer Box)

Temperature Profile for IR Reflow Soldering (Pb-Free)

  • Preheating: 25~150, Time: 60~90 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temperature: 2605
  • Time: 101 sec.

2410121227_BLUE-ROCKET-PBSS5320T_C22400501.pdf

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