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quality General Purpose Silicon Transistor BLUE ROCKET MMDT5451 NPN and PNP Types in SOT363 Plastic Package factory
quality General Purpose Silicon Transistor BLUE ROCKET MMDT5451 NPN and PNP Types in SOT363 Plastic Package factory

General Purpose Silicon Transistor BLUE ROCKET MMDT5451 NPN and PNP Types in SOT363 Plastic Package

Key Attributes
Model Number: MMDT5451
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
110MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
160V
Mfr. Part #:
MMDT5451
Package:
SOT-363
Product Description

Product Overview

The MMDT5451 is a silicon NPN and PNP transistor housed in a SOT-363 plastic package. It offers high DC current gain (hFE), low collector-to-emitter saturation voltage (VCE(sat)), and is a halogen-free product. This versatile device is designed for general-purpose amplification and switching applications.

Product Attributes

  • Brand: FsbRec (implied by datasheet URL)
  • Package Type: SOT-363
  • Semiconductor Type: NPN + PNP
  • Material: Silicon
  • Certifications: Halogen-Free

Technical Specifications

Parameter Symbol Rating (NPN) Rating (PNP) Unit Test Conditions (NPN) Min (NPN) Typ (NPN) Max (NPN) Test Conditions (PNP) Min (PNP) Typ (PNP) Max (PNP) Unit
Absolute Maximum Ratings (Ta=25)
Collector to Base Voltage VCBO 180 -180 V V
Collector to Emitter Voltage VCEO 160 -160 V V
Emitter to Base Voltage VEBO 6.0 -6.0 V V
Collector Current IC 200 -200 mA mA
Power Dissipation PD 200 mW mW
Thermal Resistance, Junction to Ambient RJA 625 /W /W
Junction and Storage Temperature Tj, Tstg -55+150
Electrical Characteristics (Ta=25)
Collector Cut-Off Current ICBO VCB=180V, IE=0 0.1 A VCB=-180V, IE=0 -0.1 A
Emitter Cut-off Current IEBO VEB=6.0V, IC=0 0.1 A VEB=-6.0V, IC=0 -0.1 A
DC Current Gain hFE(1) VCE=5.0V, IC=10mA 100 200 300 VCE=-5.0V, IC=-10mA 100 200 300
DC Current Gain hFE(2) VCE=5.0V, IC=50mA 20 160 VCE=-5.0V, IC=-50mA 20 70
DC Current Gain hFE(3) VCE=5.0V, IC=1.0mA 40 190 VCE=-5.0V, IC=-1.0mA 40 180
Collector-Emitter Saturation Voltage VCE(sat)(1) IC=10mA, IB=1.0mA 0.06 0.15 V IC=-10mA, IB=-1.0mA -0.12 -0.4 V
Collector-Emitter Saturation Voltage VCE(sat)(2) IC=50mA, IB=5.0mA 0.09 0.3 V IC=-50mA, IB=-5.0mA -0.5 -0.8 V
Base-Emitter Saturation Voltage VBE(sat)(1) IC=10mA, IB=1.0mA 0.7 1.0 V IC=-10mA, IB=-1.0mA -0.75 -1.0 V
Base-Emitter Saturation Voltage VBE(sat)(2) IC=50mA, IB=5.0mA 0.8 1.0 V IC=-50mA, IB=-5.0mA -0.8 -1.0 V
Base-Emitter Voltage VBE VCE=5.0V, IC=10mA 0.68 0.75 V VCE=-5.0V, IC=-10mA -0.7 -0.75 V
Transition Frequency fT VCE=10V, IC=10mA 50 110 MHz VCE=-10V, IC=-10mA 50 80 MHz
Collector Output Capacitance Cob VCB=10V, IE=0, f=1.0MHz 2.2 5.0 pF VCB=-10V, IE=0, f=10MHz 2.5 5.0 pF
Turn-on Time ton IC=100mA, IB1=-IB2=10mA 0.3 s IC=-100mA, -IB1=IB2=-10mA 0.1 s
Turn-off Time toff 0.4 s 0.2 s
Storage Time tstg 0.2 s 0.1 s

Packaging and Handling

Specification Details
Marking Code Pin 1 indicated by a dot. Product Type Code: GL. Lot No. Code: ***.
IR Reflow Soldering Profile (Pb-Free) Preheating: 150-180, 60-90 sec. Peak Temp.: 2455, Duration: 50.5 sec. Cooling Speed: 2-10/sec.
Resistance to Soldering Heat Test Temp.: 2605, Time: 101 sec.
Packaging (Reel) SOT-363, 3,000 Units/Reel.

2410121228_BLUE-ROCKET-MMDT5451_C22356946.pdf

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