power management solution featuring BLUE ROCKET BRCS200P03YB P Channel MOSFET with low on resistance
Key Attributes
Model Number:
BRCS200P03YB
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
24A
Operating Temperature -:
-55℃~+150℃
RDS(on):
20mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
350pF
Number:
1 P-Channel
Output Capacitance(Coss):
580pF
Input Capacitance(Ciss):
1.43nF
Pd - Power Dissipation:
20W
Gate Charge(Qg):
20nC@10V
Mfr. Part #:
BRCS200P03YB
Package:
PDFN-8L(3x3)
Product Description
Product Overview
The BRCS200P03YB is a P-Channel MOSFET designed for high-efficiency power management in electronic devices. It features low on-resistance (RDS(ON)) to minimize conductive losses and low gate charge for fast switching capabilities. With low thermal resistance and a halogen-free product designation, this MOSFET is suitable for demanding applications such as notebook AC-in load switches and battery protection for charging/discharging. Its PDFN33A-8L package offers a compact footprint for integration into modern electronic designs.
Product Attributes
- Brand: FS (implied by URL http://www.fsbrec.com)
- Package Type: PDFN33A-8L
- Material: Halogen-Free Product
- Product Code: BRCS200P03YB
- Marking Code: BR 200P03 **** (BR: Company Code, 200P03: Product Type Code, ****: Lot No. Code)
Technical Specifications
| Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta=25) | ||||||
| Drain-Source Voltage | VDS | -30 | V | |||
| Drain Current Continuous | ID(Tc=25) | -24 | A | |||
| Drain Current Pulsed | IDM | -80 | A | |||
| Gate-Source Voltage | VGS | 20 | V | |||
| Power Dissipation | PD(Tc=25) | 20 | W | |||
| Single Pulse Avalanche Energy | EAS | (L=0.5mH) | 152 | mJ | ||
| Avalanche Current | IAS | (L=0.5mH) | 19.5 | A | ||
| Junction and Storage Temperature Range | Tj, Tstg | -55 | 150 | |||
| Thermal resistance, junction - ambient | RJA | t 10s | 30 | / W | ||
| Thermal resistance, junction - case | RJC | Steady-State | 7 | / W | ||
| Electrical Characteristics (Ta=25) | ||||||
| Drain-Source Breakdown Voltage | BVDSS | ID=-250A VGS=0V | -30 | -33 | V | |
| Zero Gate Voltage Drain Current | IDSS | VDS=-30V VGS=0V | -1.0 | uA | ||
| Gate-Body leakage current | IGSS | VDS=0V, VGS= 20V | 100 | nA | ||
| Gate Threshold Voltage | VGS(th) | VDS=VGS ID=-250A | -1.0 | -1.3 | -3.0 | V |
| Static Drain-Source On-Resistance | RDS(ON) | VGS=-10V, ID=-10A | 17.5 | 20 | m | |
| VGS=-4.5V, ID=-10A | 25.5 | 30 | m | |||
| Diode Forward Voltage | VSD | IS=-1A, VGS=0V | -1.2 | V | ||
| Input Capacitance | Ciss | VDS=-25V VGS=0V f=1.0MHz | 1430 | pF | ||
| Output Capacitance | Coss | 580 | pF | |||
| Reverse Transfer Capacitance | Crss | 350 | pF | |||
| Gate resistance | Rg | VGS=0V VDS=0V f=1MHz | 13 | |||
| Total Gate Charge | Qg(10V) | VGS=-10V, VDS=-15V, ID=-9.7A | 20 | nC | ||
| Total Gate Charge | Qg(4.5V) | 9.5 | nC | |||
| Gate Source Charge | Qgs | 3.5 | nC | |||
| Gate Drain Charge | Qgd | 4.5 | nC | |||
| Electrical Characteristics (Ta=25) | ||||||
| Turn-On Delay Time | td(on) | VGS=-10V VDS=-15V RL=1.5 RGEN=3 | 10 | ns | ||
| Turn-On Rise Time | tr | 5.5 | ns | |||
| Turn-Off Delay Time | td(off) | 26.1 | ns | |||
| Turn-Off Fall Time | tf | 9.1 | ns | |||
2410121228_BLUE-ROCKET-BRCS200P03YB_C22448988.pdf
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