SOP 8 Package P Channel MOSFET BLUE ROCKET BRCS9435SC Featuring Low RDS ON and High Current Handling

Key Attributes
Model Number: BRCS9435SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
5.3A
Operating Temperature -:
-55℃~+175℃
RDS(on):
50mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
70pF@15V
Number:
1 P-Channel
Input Capacitance(Ciss):
528pF@15V
Pd - Power Dissipation:
2.5W
Gate Charge(Qg):
14nC@10V
Mfr. Part #:
BRCS9435SC
Package:
SOP-8
Product Description

Product Overview

The BRCS9435SC is a P-Channel Power Trench MOSFET in a SOP-8 plastic package. It features low gate charge and fast switching speeds due to its high-performance trench technology, offering extremely low RDS(ON) and high power and current handling capabilities. This product is halogen-free and is suitable for applications such as power management, load switching, and battery protection.

Product Attributes

  • Brand: FS (implied by datasheet URL)
  • Package Type: SOP-8
  • Technology: Power Trench MOSFET
  • Channel Type: P-Channel
  • Certifications: Halogen-free

Technical Specifications

Parameter Symbol Test Conditions Min Typ Max Unit
Absolute Maximum Ratings (Ta=25)
Drain-Source Voltage VDSS -30 V
Gate-Source Voltage VGS ±20 V
Drain Current – Continuous (note 1a) ID -5.3 A
Drain Current – Pulsed (note 1a) ID -50 A
Power Dissipation for Single Operation (note 1a) PD 2.5 W
Power Dissipation for Single Operation (note 1b) PD 1.2 W
Power Dissipation for Single Operation (note 1c) PD 1.0 W
Thermal Resistance, Junction-to-Ambient (note 1a) RθJA 50 °C/W
Thermal Resistance, Junction-to-Ambient (note 1c) RθJA 125 °C/W
Thermal Resistance, Junction-to-case (note 1) RθJC 25 °C/W
Operating and Junction Temperature Range Tj, Tstg -55 175 °C
Electrical Characteristics (Ta=25)
Drain-Source Breakdown Voltage VDSS VGS=0V, ID=-250µA -30 V
Breakdown Voltage Temperature Coefficient ΔBVDSS/ ΔTJ ID=-250µA, Referenced to 25°C -23 mV/°C
Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1.0 µA
Gate-Body Leakage Current Forward IGSS VGS=±20V, VDS=0V ±100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250µA -1.0 -1.7 -3.0 V
Gate Threshold Voltage Temperature Coefficient Δ VGS(th)/ ΔTJ ID=-250µA, Referenced to 25°C 4.5 mV/°C
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=5.3A 42 50
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=4A 65 80
Static Drain-Source On-Resistance RDS(on) VGS=10 V, ID=5.3A, TJ=125°C 57 77
On-State Drain Current ID(on) VGS=10V, VDS=5V -25 A
Forward Transconductance gFS VDS=5V, ID=5.3A 10 S
Electrical Characteristics (Ta=25)
Input Capacitance Ciss VDS=15V, VGS=0V, f =1.0MHz 528 pF
Output Capacitance Coss VDS=15V, VGS=0V, f =1.0MHz 132 pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, f =1.0MHz 70 pF
Total Gate Charge Qg VDS=15V, ID=4A, VGS=10V 10 14 nC
Gate-Source Charge Qgs VDS=15V, ID=4A, VGS=10V 2.2 nC
Gate-Drain Charge Qgd VDS=15V, ID=4A, VGS=10V 2.0 nC
Turn-On Delay Time td(on) VDD=15V, ID=1A, VGS=10 V, RGEN=6Ω 7.0 14 ns
Turn-On Rise Time tr VDD=15V, ID=1A, VGS=10 V, RGEN=6Ω 13 24 ns
Turn-Off Delay Time td(off) VDD=15V, ID=1A, VGS=10 V, RGEN=6Ω 14 25 ns
Turn-Off Fall Time tf VDD=15V, ID=1A, VGS=10 V, RGEN=6Ω 9.0 17 ns
Continuous Drain-Source Diode Forward Current IS -2.1 A
Drain-Source Diode Forward Voltage VSD VGS=0V, IS=2.1A (Note 2) -0.8 -1.2 V
Pin Configuration
PIN 1, 2, 3 S Source
PIN 4 G Gate
PIN 5, 6, 7, 8 D Drain
Marking Instructions
Company Code BR
Product Type 9435
Lot No. Code **** Code change with Lot No.
Packaging SPEC.
Package Type SOP/ESOP-8 Units/Reel 4,000 Reels/Inner Box 2
Units/Inner Box 8,000 Inner Boxes/Outer Box 6 Units/Outer Box 48,000
Reel Dimension 13″×12″ Inner Box Dimension 360×360×50 Outer Box Dimension 380×335×366 (unit: mm³)

2410121245_BLUE-ROCKET-BRCS9435SC_C358386.pdf

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