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quality 60 Volt P Channel MOSFET Bruckewell MSQ60P04D Featuring Low RDS ON and High Cell Density for Switching factory
quality 60 Volt P Channel MOSFET Bruckewell MSQ60P04D Featuring Low RDS ON and High Cell Density for Switching factory

60 Volt P Channel MOSFET Bruckewell MSQ60P04D Featuring Low RDS ON and High Cell Density for Switching

Key Attributes
Model Number: MSQ60P04D
Product Custom Attributes
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
3.7A
RDS(on):
70mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Output Capacitance(Coss):
97.3pF
Input Capacitance(Ciss):
1.447nF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
9.86nC@4.5V
Mfr. Part #:
MSQ60P04D
Package:
SOP-8
Product Description

Product Overview

The MSQ60P04D is a high-performance P-Channel 60-V (D-S) MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge. It is well-suited for high-efficiency, fast-switching applications and meets RoHS and Green Product requirements. Typical applications include MB, VGA, Vcore, POL applications, and SMPS 2nd SR.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Type: P-Channel MOSFET
  • Voltage Rating: 60 V (Drain-Source)
  • RoHS Compliant: Yes
  • Green Device: Available
  • Package Type: SOP-8
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
ABSOLUTE MAXIMUM RATINGS
VDS Drain-Source Voltage -60 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TA =25°C) -3.7 A
ID Continuous Drain Current (TA =70°C) -3 A
IDM Pulsed Drain Current -7.5 A
EAS Single Pulse Avalanche Energy 35.4 mJ
IAS Avalanche Current -26.6 A
PD Power Dissipation (TA =25°C) 1.5 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
THERMAL RESISTANCE RATINGS
RθJA Maximum Junction-to-Ambient 85 °C/W
ELECTRICAL CHARACTERISTICS (TJ=25°C unless otherwise specified)
VGS(th) Gate Threshold Voltage VDS =VGS, ID =-250μA -1.2 -2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250μA -60 V
gfs Forward Transconductance VDS =-5V, ID =-3A 15 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V ±100 nA
IDSS Drain-Source Leakage Current VDS =-48V, VGS =0V, TJ =25°C -1 μA
IDSS Drain-Source Leakage Current VDS =-48V, VGS =0V, TJ =55°C -5 μA
RDS(on) Static Drain-Source On-Resistance VGS =-10V, ID =-3A 58 70 mΩ
VGS =-4.5V, ID =-2A 70 105 mΩ
VSD Diode Forward Voltage IS =-1A, VGS =0V, TJ =25°C -1.2 V
IS Continuous Source Current VG =VD =0V, Force Current -3.7 A
ISM Pulsed Source Current -7.5 A
DYNAMIC CHARACTERISTICS
Qg Total Gate Charge VDS =-48V ID =-3A VGS =-4.5V 9.86 nC
Qgs Gate-Source Charge 3.08 nC
Qgd Gate-Drain Charge 2.95 nC
td(on) Turn-On Delay Time VDS =-15V ID =-1A VGS =-10V RG =3.3Ω 28.8 ns
tr Rise Time 19.8 ns
td(off) Turn-Off Delay Time 60.8 ns
tf Fall Time 7.2 ns
CISS Input Capacitance VDS =-15V VGS =0V f =1.0MHz 1447 pF
COSS Output Capacitance 97.3 pF
CRSS Reverse Transfer Capacitance 70 pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz 13.5 Ω

Notes:

  • 1. Data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
  • 2. Data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
  • 3. EAS data shows Max. rating. Test condition: VDD=-25V, VGS=-10V, L=0.1mH, IAS=-26.6A.
  • 4. Power dissipation limited by 150°C junction temperature.
  • 5. Data is theoretically the same as ID and IDM; in real applications, should be limited by total power dissipation.

2409291004_Bruckewell-MSQ60P04D_C22465534.pdf

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