P Channel MOSFET Bruckewell MSHM60P14 Designed for Fast Switching and High Energy Pulse Applications
MSHM60P14 P-Channel 60-V (D-S) MOSFET
Product Overview
The MSHM60P14 is a P-Channel MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)), deliver superior switching performance, and provide robust high-energy pulse handling capabilities in avalanche and commutation modes. These characteristics make the MSHM60P14 well-suited for high-efficiency, fast-switching applications. Typical applications include notebooks, load switches, networking equipment, and LED lighting.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Qualification: AEC-Q101 available
- RoHS Compliant: Yes
- Green Device Available: Yes
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current (TC =25°C) | -14 | A | |||
| ID | Continuous Drain Current (TC =100°C) | -9 | A | |||
| IDM | Pulsed Drain Current1,2 | -56 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | -25 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 31 | mJ | |||
| PD | Power Dissipation4 (TC =25°C) | 34.7 | W | |||
| PD | Power Dissipation4 (TA =25°C) | 2 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 62 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 3.6 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250μA | -1.2 | -2.5 | V | |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250μA | -60 | V | ||
| gfs | Forward Transconductance | VDS =-10V, ID =-3A | 7 | S | ||
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA | ||
| IDSS | Drain-Source Leakage Current | VDS =-48V, VGS =0V, TJ =25°C | -1 | μA | ||
| IDSS | Drain-Source Leakage Current | VDS =-48V, VGS =0V, TJ =125°C | -10 | μA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-10V, ID =-12A | 70 | mΩ | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-4.5V, ID =-8A | 105 | mΩ | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =25V, L =0.1mH, IAS =12A | 7.2 | mJ | ||
| VSD | Diode Forward Voltage2 | IS =-1A, VGS =0V, TJ =25°C | -1.2 | V | ||
| IS | Continuous Source Current1,6 | VG =VD =0V, Force Current | -14 | A | ||
| ISM | Pulsed Source Current2,6 | -28 | A | |||
| Dynamic and Switching Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =-30V ID =-3A VGS =-4.5V | 16.4 | nC | ||
| Qgs | Gate-Source Charge | 3 | nC | |||
| Qgd | Gate-Drain Charge | 3.6 | nC | |||
| td(on) | Turn-On Delay Time2 | VDS =-15V ID =-1A VGS =-10V RG =3.3Ω | 28 | ns | ||
| tr | Rise Time | 19 | ns | |||
| td(off) | Turn-Off Delay Time | 60 | ns | |||
| tf | Fall Time | 8 | ns | |||
| CISS | Input Capacitance | VDS =-15V VGS =0V f =1.0MHz | 1447 | pF | ||
| COSS | Output Capacitance | 97.3 | pF | |||
| CRSS | Reverse Transfer Capacitance | 70 | pF | |||
Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width ≤ 300μs, duty cycle ≤ 2%.
3 The EAS data shows maximum rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-25A.
4 The power dissipation is limited by 150°C junction temperature.
5 The Min. value is 100% EAS test guaranteed.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
Package Type: PDFN 3.3X3.3
Marking: MSHM60P14
2410121447_Bruckewell-MSHM60P14_C22374930.pdf
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