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quality 60 Volt N Channel MOSFET Bruckewell MSH60N23D Featuring Green Device Compliance and PDFN 5X6 Package factory
quality 60 Volt N Channel MOSFET Bruckewell MSH60N23D Featuring Green Device Compliance and PDFN 5X6 Package factory

60 Volt N Channel MOSFET Bruckewell MSH60N23D Featuring Green Device Compliance and PDFN 5X6 Package

Key Attributes
Model Number: MSH60N23D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
60V
Current - Continuous Drain(Id):
23A
RDS(on):
38mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
64pF
Number:
1 N-channel
Output Capacitance(Coss):
86pF
Pd - Power Dissipation:
41.6W
Input Capacitance(Ciss):
1.378nF
Gate Charge(Qg):
12.6nC@4.5V
Mfr. Part #:
MSH60N23D
Package:
PDFN5x6-8
Product Description

Product Overview

The MSH60N23D is a high-performance N-Channel 60-V (D-S) MOSFET featuring extreme high cell density. It offers excellent RDS(ON) and gate charge, making it ideal for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and has full function reliability approval. It is suitable for 4.5V gate drive applications, provides excellent CdV/dt effect decline, and is available as a Green Device. Typical applications include DC fans, motor drives, networking, and half/full bridge topologies.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSH60N23D
  • Channel Type: N-Channel
  • RoHS Compliant: Yes
  • Green Device Available: Yes
  • Package Type: PDFN 5X6
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage 60 V
VGS Gate-Source Voltage 20 20 V
ID Continuous Drain Current (TC =25C) 23 A
ID Continuous Drain Current (TC =100C) 15 A
IDM Pulsed Drain Current 46 A
IAS Single Pulse Avalanche Current, L =0.1mH 23 A
EAS Single Pulse Avalanche Energy, L =0.1mH 26.5 mJ
PD Power Dissipation (TC =25C) 41.6 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 C
Thermal Resistance Ratings
RJA Maximum Junction-to-Ambient (Note 1) 62 C/W
RJC Maximum Junction-to-Case (Note 1) 3 C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250A 1.2 - 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250A 60 - - V
gfs Forward Transconductance VDS =5V, ID =15A - 17 - S
IGSS Gate-Source Leakage Current VDS =0V, VGS =20V - - 100 nA
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =25C - - 1 A
IDSS Drain-Source Leakage Current VDS =48V, VGS =0V, TJ =55C - - 10 A
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =15A - - 32 m
RDS (on) Static Drain-Source On-Resistance VGS =4.5V, ID =10A - - 38 m
EAS Single Pulse Avalanche Energy VDD =25V, L =0.1mH, IAS =15A - 11.2 - mJ
VSD Diode Forward Voltage IS =1A, VGS =0V, TJ =25C - - 1.2 V
IS Continuous Source Current (Note 1,6) - - 23 A
ISM Pulsed Source Current (Note 2,6) - - 46 A
Dynamic Characteristics
Qg Total Gate Charge - 12.6 - nC
Qgs Gate-Source Charge - 3.2 - nC
Qgd Gate-Drain Charge VDS =48V, ID =12A, VGS =4.5V - 6.3 - nC
td(on) Turn-On Delay Time (Note 2) - 8 - ns
tr Rise Time - 14.2 - ns
td(off) Turn-Off Delay Time - 24.4 - ns
tf Fall Time VDS =30V, ID =10A, VGS =10V, RG =3.3 - 4.6 - ns
CISS Input Capacitance VDS =15V, VGS =0V, f =1.0MHz - 1378 - pF
COSS Output Capacitance - 86 - pF
CRSS Reverse Transfer Capacitance - 64 - pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz - 3.2 -

2412061551_Bruckewell-MSH60N23D_C42407740.pdf

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