P Channel 20 Volt MOSFET Bruckewell MS23P09 with Improved dv dt Capability and Fast Commutation Mode
Key Attributes
Model Number:
MS23P09
Product Custom Attributes
Drain To Source Voltage:
20V
Configuration:
-
Current - Continuous Drain(Id):
5.8A
Operating Temperature -:
-55℃~+150℃
RDS(on):
33mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
115pF
Number:
1 P-Channel
Output Capacitance(Coss):
155pF
Pd - Power Dissipation:
1.56W
Input Capacitance(Ciss):
19.8pF
Gate Charge(Qg):
16.1nC@4.5V
Mfr. Part #:
MS23P09
Package:
SOT-23
Product Description
Product Overview
The MS23P09 is a P-Channel 20-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize on-resistance (RDS(ON)) and provide superior switching performance and commutation mode, making it well-suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements, offering full function reliability. It is ideal for battery protection, load switching, and hand-held instrument applications, and supports -1.8V gate drive applications with improved dv/dt capability.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Package Type: SOT-23
- Packing: 3,000/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | -20 | V | |||
| VGS | Gate-Source Voltage | ±10 | V | |||
| ID | Continuous Drain Current (TC =25°C) | -5.8 | A | |||
| ID | Continuous Drain Current (TC =100°C) | -3.7 | A | |||
| IDM | Pulsed Drain Current1,2 (TC =25°C) | -23 | A | |||
| PD | Power Dissipation (TC =25°C) | 1.56 | W | |||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient3 | 80 | °C/W | |||
| Electrical Characteristics (TJ =25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =-250µA | -0.3 | -0.6 | -1.0 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =-250µA | -20 | - | - | V |
| gfs | Forward Transconductance | VDS =-10V, ID =-3A | - | 8.4 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±10V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =-20V, VGS =0V, TJ =25°C VDS =-16V, VGS =0V, TJ =125°C | - | - | -1 -10 | µA |
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =-4.5V, ID =-4A | - | - | 28 | mΩ |
| VGS =-2.5V, ID =-3A | - | - | 37 | |||
| VGS =-1.8V, ID =-2A | - | - | 49 | |||
| VSD | Diode Forward Voltage2 | IS =-1A, VGS =0V, TJ =25°C | - | - | -1.0 | V |
| IS | Continuous Source Current (Diode) | - | - | -5.8 | A | |
| ISM | Pulsed Source Current (Diode) | VG =VD =0V, Force Current | - | - | -11.6 | A |
| Dynamic and switching Characteristics | ||||||
| Qg | Total Gate Charge2,3 | VDS =-10V ID =-4A VGS =-4.5V | -- | 16.1 | -- | nC |
| Qgs | Gate-Source Charge | -- | 1.8 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 3.8 | -- | nC | |
| td(on) | Turn-On Delay Time2,3 | -- | 8.2 | -- | ns | |
| tr | Rise Time | -- | 30 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 71.1 | -- | ns | |
| tf | Fall Time | VDS =-10V ID =-1A VGS =-4.5V RG =25Ω | -- | 19.8 | -- | ns |
| CISS | Input Capacitance | -- | 1440 | -- | pF | |
| COSS | Output Capacitance | -- | 155 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | VDS =-15V VGS =0V f =1.0MHz | -- | 115 | -- | pF |
Notes:
1. Repetitive Rating: Pulsed width limited by maximum junction temperature.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. Essentially independent of operating temperature.
2412061551_Bruckewell-MS23P09_C42407718.pdf
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