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quality Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current factory
quality Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current factory

Darlington transistor array BORN BULN2803LVS with common cathode clamp diodes supporting 500 milliamp output current

Key Attributes
Model Number: BULN2803LVS
Product Custom Attributes
Current - Collector(Ic):
500mA
Collector - Emitter Voltage VCEO:
-
Mfr. Part #:
BULN2803LVS
Package:
SOIC-18-300mil
Product Description

Product Overview

The BULN2803LVS is a 20 V, 500 mA Darlington transistor array from BORN SEMICONDUCTOR, INC. It features eight NPN Darlington pairs with common-cathode clamp diodes for switching inductive loads, supporting 1.8V low voltage input and single 500 mA output current. Designed for direct operation with TTL or 5-V CMOS devices, it includes a 2.7-k series base resistor for each Darlington pair. Applications include stepper motor drive, relay drive, display driver, and indicator drive.

Product Attributes

  • Brand: BORN SEMICONDUCTOR, INC.
  • Model: BULN2803LVS
  • Package: SOP-18
  • Origin: Not specified
  • Material: Not specified
  • Color: Not specified

Technical Specifications

Parameter Value Unit
General Features
Output Current (per channel) 500 mA
Collector-Emitter Voltage 20 V
Input Voltage Compatibility 1.8V low voltage input, TTL/CMOS logic signal
Series Base Resistor 2.7-k
Absolute Maximum Ratings (At 25C free-air temperature unless otherwise noted)
Collector to emitter voltage (VCE) 20 V
Input voltage (VI) 20 V
Peak collector current (ICP) 500 mA
Output clamp current (IOK) 500 mA
Total substrate-terminal current (ITE) -2.0 A
Operating virtual junction temperature (TJ) -65 to 150 C
Storage temperature range (TSTG) -65 to 150 C
ESD Ratings
Human body model (HBM) 2000 V
Charged device model (CDM) 500 V
Recommended Operating Conditions
Collector-emitter voltage (V(CE)) 0 to 18 V
Ambient temperature (T(A)) -40 to 85 C
Thermal Information (SOIC Package)
Junction-to-ambient thermal resistance (RJA) 66.4 C/W
Junction-to-case (top) thermal resistance (RJC(top)) 29.5 C/W
Junction-to-board thermal resistance (RJB) 33.0 C/W
Junction-to-top characterization parameter (JT) 6.0 C/W
Junction-to-board characterization parameter (JB) 32.5 C/W
Electrical Characteristics (TA=+25C, unless otherwise specified)
Input current-on condition (VI(on)) (IC = 100 mA) 2.0 to 2.1 V
Input current-on condition (VI(on)) (IC = 200 mA) 2.2 to 2.3 V
Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 100 mA) 2.0 to 2.1 V
Collector-emitter saturation voltage (VCE(sat)) (VI = 1.8V, IC = 200 mA) 3.2 to 3.3 V
Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 300 mA) 1.5 to 1.6 V
Collector-emitter saturation voltage (VCE(sat)) (VI =3.3V, IC = 500 mA) 1.8 to 1.9 V
Clamp diode forward Voltage (VF) (IF = 350 mA) 1.4 to 1.6 V
Output leakage current (ICEX) (VCE = 18V, IIN = 0V) to 50 A
Output leakage current (VCE = 18V, VIN = 0V) to 100 A
Input current (IIN) (VIN = 1.8V, IC = 250mA) 0.6 to 1.2 mA
Input current (IIN) (VIN = 2.4V, IC = 250mA) 1.6 to 3.0 mA
Input current (IIN) (VIN = 3.3V, IC = 250mA) 3.2 to 4.5 mA
Clamp reverse current (IR) (VR = 18 V) to 100 A
Input capacitance (Ci) (VI = 0, f = 1 MHz) 15 pF
Propagation delay time, low-to-high-level output (tPLH) (VL = 5 V, RL = 45) 0.12 s
Propagation delay time, high-to-low-level output (tPHL) (VL = 5 V, RL = 45) 0.12 s
SOP18 Package Dimensions (mm)
A to 2.65
A1 0.10 to 0.3
b 0.31 to 0.51
c 0.15 to 0.25
D 11.35 to 11.75
E 9.97 to 10.63
E1 7.40 to 7.60
e 1.27BSC
L 0.40 to 1.27
L1 0.20 to 0.33
0 to 8

2504101957_BORN-BULN2803LVS_C406219.pdf

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