NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial Planar SOT523 Package

Key Attributes
Model Number: MMBTSC3356T-3G
Product Custom Attributes
Current - Collector Cutoff:
1uA
Emitter-Base Voltage(Vebo):
3V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
3GHz
Type:
NPN
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
12V
Mfr. Part #:
MMBTSC3356T-3G
Package:
SOT-523
Product Description

Product Overview

This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three DC current gain groups (Q, R, and S) and is housed in a plastic surface-mounted SOT-523 package with 3 leads.

Product Attributes

  • Origin: Heyuan China Base Electronics Technology Co., Ltd.
  • Material: Silicon Epitaxial Planar
  • Package Type: Plastic surface mounted package; 3 leads SOT-523
  • Transistor Type: NPN

Technical Specifications

Parameter Symbol Group Q Group R Group S Unit Conditions
Absolute Maximum Ratings (Ta = 25 OC)
Collector Base Voltage VCBO 20 V
Collector Emitter Voltage VCEO 12 V
Emitter Base Voltage VEBO 3 V
Collector Current IC 100 mA
Power Dissipation Ptot 200 mW
Junction Temperature Tj 150 OC
Storage Temperature Range TS -65 to +150 OC
Characteristics (Ta = 25 OC)
DC Current Gain hFE 50 80 125 - VCE = 10 V, IC = 20 mA
Collector Cutoff Current ICBO 1 A VCB = 10 V
Emitter Cutoff Current IEBO 1 A VEB = 1 V
Gain Bandwidth Product fT 3 - GHz VCE = 10 V, IC = 20 mA
Feed-Back Capacitance Cre 1) 0.55 1 pF VCB = 10 V, f = 1 MHz
Noise Figure NF 1.1 2 dB VCE = 10 V, IC = 7 mA, f = 1 GHz

1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.

HFE MARKING: Q: R23, R: R24, S: R25


2410121546_CBI-MMBTSC3356T-3G_C21714145.pdf

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