NPN Transistor CBI MMBTSC3356T-3G for Microwave Applications Silicon Epitaxial Planar SOT523 Package
Product Overview
This NPN Silicon Epitaxial Planar Transistor is designed for microwave applications across VHF, UHF, and CATV bands. It is subdivided into three DC current gain groups (Q, R, and S) and is housed in a plastic surface-mounted SOT-523 package with 3 leads.
Product Attributes
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
- Material: Silicon Epitaxial Planar
- Package Type: Plastic surface mounted package; 3 leads SOT-523
- Transistor Type: NPN
Technical Specifications
| Parameter | Symbol | Group Q | Group R | Group S | Unit | Conditions |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | ||||||
| Collector Base Voltage | VCBO | 20 | V | |||
| Collector Emitter Voltage | VCEO | 12 | V | |||
| Emitter Base Voltage | VEBO | 3 | V | |||
| Collector Current | IC | 100 | mA | |||
| Power Dissipation | Ptot | 200 | mW | |||
| Junction Temperature | Tj | 150 | OC | |||
| Storage Temperature Range | TS | -65 to +150 | OC | |||
| Characteristics (Ta = 25 OC) | ||||||
| DC Current Gain | hFE | 50 | 80 | 125 | - | VCE = 10 V, IC = 20 mA |
| Collector Cutoff Current | ICBO | 1 | A | VCB = 10 V | ||
| Emitter Cutoff Current | IEBO | 1 | A | VEB = 1 V | ||
| Gain Bandwidth Product | fT | 3 | - | GHz | VCE = 10 V, IC = 20 mA | |
| Feed-Back Capacitance | Cre 1) | 0.55 | 1 | pF | VCB = 10 V, f = 1 MHz | |
| Noise Figure | NF | 1.1 | 2 | dB | VCE = 10 V, IC = 7 mA, f = 1 GHz | |
1) The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge.
HFE MARKING: Q: R23, R: R24, S: R25
2410121546_CBI-MMBTSC3356T-3G_C21714145.pdf
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