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quality P Channel MOSFET SOT 23 Package Featuring BORN BSS84 Ultra Low On Resistance Device factory
quality P Channel MOSFET SOT 23 Package Featuring BORN BSS84 Ultra Low On Resistance Device factory

P Channel MOSFET SOT 23 Package Featuring BORN BSS84 Ultra Low On Resistance Device

Key Attributes
Model Number: BSS84
Product Custom Attributes
Drain To Source Voltage:
50V
Current - Continuous Drain(Id):
130mA
Operating Temperature -:
-55℃~+150℃
RDS(on):
2Ω@4.5V,0.13A
Gate Threshold Voltage (Vgs(th)):
2V
Reverse Transfer Capacitance (Crss@Vds):
3.5pF@25V
Number:
1 P-Channel
Pd - Power Dissipation:
350mW
Input Capacitance(Ciss):
25pF
Gate Charge(Qg):
-
Mfr. Part #:
BSS84
Package:
SOT-23
Product Description

Product Overview

The BSS84 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package, suitable for various applications requiring efficient power handling. Key electrical characteristics include a drain-source breakdown voltage of -50V and a continuous drain current of -0.13A. The device offers low on-resistance values, with typical figures of 2 at VGS=-10V and 2.5 at VGS=-4.5V.

Product Attributes

  • Brand: BSS84
  • Package Type: SOT-23
  • Technology: Advanced trench process
  • Cell Design: High Density Cell Design
  • Revision: 2018
  • Manufacturer: www.born-tw.com

Technical Specifications

Parameter Test Conditions Min Typ Max Unit
Absolute Maximum Ratings @TA=25 unless otherwise noted
VDS (Drain-Source Voltage) -50 V
VGS (Gate-Source Voltage) 20 V
ID (Continuous Drain Current) -0.13 A
IDM (Pulsed Drain Current) (tp=10s) -0.5 A
PD (Power Dissipation) 350 mW
RJA (Thermal Resistance Junction To Ambient) (t5s) 350 /W
TJ,Tstg (Operation Junction And Storage Temperature Range) -55 +150
Electrical Characteristics @TA=25 unless otherwise noted
V(BR)DSS (Drain-source breakdown voltage) VGS=0, ID=250A -50 V
VGS(th) (Gate threshold voltage) VDS=VGS, ID=-250A -0.8 -2.0 V
IGSS (Gate-body leakage current) VDS=0, VGS=10V 10 A
IDSS (Zero gate voltage drain current) VDS=-50V, VGS=0V -10 A
IDSS (Zero gate voltage drain current) VDS=-40V, VGS=0V -100 nA
RDS(on) (Drain-source on-resistance) VGS=-10V, ID=-0.13A 2 5
RDS(on) (Drain-source on-resistance) VGS=-4.5V, ID=-0.13A 2.5 6
gFS (Forward transconductance) VDS=-25V, ID=-0.13A 50 mS
VSD (Diode forward voltage) IS=-0.13A,VGS=0V -1.0 V
Ciss (Input capacitance) VDS=-25V, VGS=0V, f=1MHz 25 pF
Coss (Output capacitance) 15 pF
Crss (Reverse transfer capacitance) 3.5 pF
td(on) (Turn-on delay time) VGS=-10V,VDS=-15V, ID=-200mA, RGEN=25 16.7 nS
tr (Rise time) 8.6 nS
td(off) (Turn-off delay time) 17.9 nS
tf (Fall time) 5.3 nS
Package Information-SOT23
Symbol MIN. Typ. MAX.
A 0.90 1.00 1.10
A1 0.02 0.06 0.10
A2 0.60
D 2.85 2.90 2.95
b 0.37 0.40 0.43
E 2.35 2.40 2.45
E1 1.25 1.30 1.35
e 1.85 1.90 1.95
L 0.35 0.40 0.48
0 6
Ordering Information
Order code Package Base qty Delivery mode
BSS84 SOT-23 3K Tape and reel

2410122011_BORN-BSS84_C7461217.pdf

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