Power Management MOSFET BORN BM3415E with Logic Level Control and Low On Resistance in SOT23 Package
Key Attributes
Model Number:
BM3415E
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.8A
RDS(on):
45mΩ@4.5V,4A
Gate Threshold Voltage (Vgs(th)):
1.2V
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
85pF
Number:
1 P-Channel
Output Capacitance(Coss):
120pF
Input Capacitance(Ciss):
675pF
Pd - Power Dissipation:
1.5W
Gate Charge(Qg):
14.2nC@4.5V
Mfr. Part #:
BM3415E
Package:
SOT-23
Product Description
Product Overview
The BM3415E is a P-Channel Enhancement-Mode MOSFET designed for various power management applications. It features low RDS(on) at -4.5V, -3.3V logic-level control, and integrated HMB ESD Protection 2KV. This RoHS compliant MOSFET is ideal for use in load switches, switching circuits, high-speed line drivers, and general power management functions.
Product Attributes
- Brand: Born-TW
- Package Type: SOT23
- Compliance: PbFree, RoHS Compliant
- ESD Protection: 2KV
Technical Specifications
| Symbol | Parameter | Condition | Min | Typ | Max | Unit |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VGS | Gate-Source Voltage | ±8 | V | |||
| V(BR)DSS | Drain-Source Breakdown Voltage | -20 | V | |||
| TJ | Maximum Junction Temperature | 150 | °C | |||
| TSTG | Storage Temperature Range | -50 | to | 150 | °C | |
| IDM | Pulse Drain Current | Tested¹, TA=25°C | -30 | A | ||
| ID | Continuous Drain Current | TA=25°C | -4.8 | A | ||
| ID | Continuous Drain Current | TA=70°C | -3.6 | A | ||
| PD | Maximum Power Dissipation | TA=25°C | 1.5 | W | ||
| PD | Maximum Power Dissipation | TA=70°C | 1.0 | W | ||
| θJA | Thermal Resistance Junction-Ambient | Mounted on Large Heat Sink | 80 | °C/W | ||
| Static Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| V(BR)DSS | Drain-Source Breakdown Voltage | VGS=0V, ID=-250μA | -20 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-20V, VGS=0V, TA=25°C | -1 | μA | ||
| IDSS | Zero Gate Voltage Drain Current | VDS=-16V, VGS=0V, TA=125°C | -100 | uA | ||
| IGSS | Gate-Body Leakage Current | VGS=±8V, VDS=0V | ±10 | μA | ||
| VGS(TH) | Gate Threshold Voltage | VDS=VGS, ID=-250μA | -0.4 | -0.7 | -1.2 | V |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-4.5V, ID=-4A | 37 | 45 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-3.3V, ID=-3A | 43 | 55 | mΩ | |
| RDS(ON) | Drain-Source On-State Resistance | VGS=-2.5V, ID=-2A | 52 | 65 | mΩ | |
| Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| Ciss | Input Capacitance | VDS=-10V, VGS=0V, f=1MHz | 675 | pF | ||
| Coss | Output Capacitance | 120 | pF | |||
| Crss | Reverse Transfer Capacitance | 85 | pF | |||
| Qg | Total Gate Charge | VDS=-10V, ID=-4A, VGS=-4.5V | 14.2 | nC | ||
| Qgs | Gate Source Charge | 3.2 | nC | |||
| Qgd | Gate Drain Charge | 5.8 | nC | |||
| Switching Characteristics @ TJ = 25°C (unless otherwise stated) | ||||||
| td(on) | Turn on Delay Time | VDD=-10V, ID=-2A, RG=3.3Ω, VGS=-4.5V | 15 | ns | ||
| tr | Turn on Rise Time | 11 | ns | |||
| td(off) | Turn Off Delay Time | 22 | ns | |||
| tf | Turn Off Fall Time | 35 | ns | |||
| Source Drain Diode Characteristics | ||||||
| ISD | Source drain current (Body Diode) | TA=25°C | -2 | A | ||
| VSD | Forward on voltage | TJ=25°C, ISD=-2A, VGS=0V² | -0.83 | -1.2 | V | |
Notes:
¹Pulse width limited by maximum allowable junction temperature.
²Pulse test ; Pulse width≤300μs, duty cycle≤2%.
Order Information
| Product | Package | Marking | Packing | Min Unit Quantity |
|---|---|---|---|---|
| BM3415E | SOT23 | 3415E | 3000PCS/Reel | 3000PCS |
Package Outline
SOT-23 PACKAGE OUTLINE
Plastic surface mounted package SOT-23 (UNIT)mm
2410122020_BORN-BM3415E_C431504.pdf
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