Power Switching MOSFET BORN BMQ4435P P Channel with 30 Volt Drain Source Voltage and RoHS Compliance
Key Attributes
Model Number:
BMQ4435P
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
40A
RDS(on):
19mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1.9V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
145pF
Input Capacitance(Ciss):
1.23nF
Output Capacitance(Coss):
160pF
Pd - Power Dissipation:
39W
Gate Charge(Qg):
26.4nC
Mfr. Part #:
BMQ4435P
Package:
PDFN-8L(3.3x3.3)
Product Description
Product Overview
The BMQ4435P is a P-Channel Advanced Mode MOSFET designed for efficient power management and switching applications. It features a VDS of -30V and a continuous drain current (ID) of -40A. With a typical RDS(ON) of 11m at VGS = -10V and 15m at VGS = -4.5V, this MOSFET offers low on-resistance, contributing to reduced power loss. Its fast switching capabilities and suitability for halogen and antimony-free environments, along with RoHS compliance, make it ideal for power management in portable and desktop PCs, as well as general switching applications.
Product Attributes
- Brand: BORNN (implied by URL)
- Model: BMQ4435P
- Type: P-Channel Advanced Mode MOSFET
- Compliance: Halogen and Antimony Free, RoHS compliant
- Package: PDFN3.3*3.3
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | VDS | -30 | V | |||
| Gate-Source Voltage | VGS | 25 | V | |||
| Drain Current | ID | TC=25C | -40 | A | ||
| Drain Current | ID | TC=100C | -28 | A | ||
| Drain Current-Pulse | IDM | -160 | A | |||
| Avalanche Current (L=0.3mH) | IAS | 22.5 | A | |||
| Avalanche Energy, Single Pulsed | EAS | 75 | mJ | |||
| Power Dissipation | PD | TC=25C | 39 | W | ||
| Power Dissipation | PD | TC=100C | 15 | W | ||
| Junction Temperature (Max) | TJ | -55 | 150 | C | ||
| Storage Temperature | Tstg | -55 | 150 | C | ||
| Thermal Resistance from Junction to Case | RJC | 3.2 | C/W | |||
| Thermal Resistance From Junction to Ambient | RJA | 56 | C/W | |||
| Drain-Source Breakdown Voltage | BVDSS | VGS = 0V, ID=-250uA | -30 | V | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, IDS=-250uA | -1.1 | -1.5 | -1.9 | V |
| Zero Gate Voltage Drain Current | IDSS | VDS = -30V, VGS=0V | -1 | uA | ||
| Gate-Source Leakage Current, Reverse | IGSS | VGS = 25V, VDS=0V | 100 | nA | ||
| Static Drain-source On Resistance | RDS(on) | VGS=-10V, ID=-10A | 11 | 14.5 | m | |
| Static Drain-source On Resistance | RDS(on) | VGS=-4.5V, ID=-5A | 15 | 19 | m | |
| Input capacitance | Ciss | VDS = -15V, VGS =0V, f = 1MHz | 1230 | pF | ||
| Output capacitance | Coss | 160 | pF | |||
| Reverse transfer capacitance | Crss | 145 | pF | |||
| Turn-on delay time | Td(on) | VDS=-15V, VGS=-10V, RL =1, RG =3 | 18 | nS | ||
| Turn-on Rise time | Tr | 22 | nS | |||
| Turn-Off Delay Time | Td(off) | 55 | nS | |||
| Turn-Off Fall time | Tf | 42 | nS | |||
| Gate to Source Charge | Qgs | VDS=-15V, VGS=-10V, ID=-10A | 6 | nC | ||
| Gate to Drain Charge | Qgd | 4.3 | nC | |||
| Gate to Drain Charge | Qg | 26.4 | nC | |||
| Gate Resistance | Rg | f = 1MHz | 10 | |||
| Diode Forward Voltage | VSD | VGS=0V,IS=-1A | -0.75 | -1 | V | |
| Reverse Recovery Time | Trr | ISD =-10A,VGS=0V di/dt=100A/s | 32 | nS | ||
| Reverse Recovery Charge | Qrr | 28 | nC |
| Package Dimension (PDFN3.3*3.3) | MIN. | Typ. | MAX. |
|---|---|---|---|
| A | 0.70 | 0.80 | 0.90 |
| b | 0.25 | 0.30 | 0.35 |
| c | 0.14 | 0.15 | 0.20 |
| D | 3.10 | 3.30 | 3.50 |
| D1 | 3.05 | 3.15 | 3.25 |
| D2 | 2.35 | 2.45 | 2.55 |
| e | 0.55 | 0.65 | 0.75 |
| E | 3.10 | 3.30 | 3.50 |
| E1 | 2.90 | 3.00 | 3.10 |
| E2 | 1.64 | 1.74 | 1.84 |
| H | 0.32 | 0.42 | 0.52 |
| K | 0.59 | 0.69 | 0.79 |
| L | 0.25 | 0.40 | 0.55 |
| L1 | 0.10 | 0.15 | 0.20 |
| L2 | 0.15 | ||
| 8 | 10 | 12 |
2504231555_BORN-BMQ4435P_C48533970.pdf
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