Low Resistance N Channel MOSFET BORN BM138KE Featuring Advanced Trench Process and 0.5A Drain Current
Key Attributes
Model Number:
BM138KE
Product Custom Attributes
Mfr. Part #:
BM138KE
Package:
SOT-723
Product Description
Product Overview
The BM138KE is an N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed with Advanced Trench Process Technology and a High Density Cell Design, it offers an ultra-low on-resistance. This MOSFET features a BVDSS of 50V and a continuous drain current (ID) of 0.5A at VGS=4.5V. It is housed in a SOT-723 surface mount package and includes HMB ESD Protection of 2KV. The BM138KE is suitable for applications requiring efficient switching and low power loss.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BM138KE
- Technology: Advanced Trench Process
- Package Type: SOT-723
- Protection: HMB ESD Protection 2KV
- Channel Type: N-Channel MOSFET
Technical Specifications
| Parameter | Condition | Value | Unit |
|---|---|---|---|
| Features | |||
| BVDSS | 50 | V | |
| ID | 0.5 | A | |
| RDS(ON) | VGS=10V, TYP | 1.1 | |
| RDS(ON) | VGS=4.5V, TYP | 1.5 | |
| Absolute Maximum Ratings | |||
| VDS | (@TA=25C) | 50 | V |
| VGS | (@TA=25C) | 20 | V |
| ID | VGS =4.5V, TA = 25C | 0.5 | A |
| TA = 70C | 0.3 | A | |
| IDM | TA = 25C (1) | 1.6 | A |
| PD | TA = 25C | 0.9 | W |
| TA = 70C | 0.8 | W | |
| TJ | Range | 150 | C |
| Tstg | Range | -55 to 150 | C |
| RJA | Thermal Resistance Junction-Ambient | 125 | C/W |
| Electrical Characteristics | |||
| BVDSS | VGS = 0V, ID = 250uA | 50 | V |
| IDSS | VDS = 50V, VGS = 0V | 0.5 | uA |
| IGSS | VGS = 20V, VDS = 0V | 10 | uA |
| VGS(th) | VDS = VGS, ID = 250uA | 0.6 - 1.5 | V |
| RDS(on) | VGS = 10V, ID = 0.5A | 1.1 - 2.5 | |
| RDS(on) | VGS = 4.5V, ID =0.2A | 1.5 - 3 | |
| Dynamic Electrical Characteristics | |||
| Ciss | VDS = 30V, VGS = 0V, f = 1.0MHz | 23.8 | pF |
| Coss | VDS = 30V, VGS = 0V, f = 1.0MHz | 3.9 | pF |
| Crss | VDS = 30V, VGS = 0V, f = 1.0MHz | 1.5 | pF |
| Qg | VDS = 30V, ID = 0.4A, VGS = 10V | 0.93 | nC |
| Qgs | VDS = 30V, ID = 0.4A, VGS = 10V | 0.18 | - |
| Qgd | VDS = 30V, ID = 0.4A, VGS = 10V | 0.31 | - |
| Switching Characteristics | |||
| td(on) | VDD = 30V, VGS = 10V, RG = 3.3, ID = 0.3A | 6 | ns |
| tr | VDD = 30V, VGS = 10V, RG = 3.3, ID = 0.3A | 3.5 | ns |
| td(off) | VDD = 30V, VGS = 10V, RG = 3.3, ID = 0.3A | 20 | ns |
| tf | VDD = 30V, VGS = 10V, RG = 3.3, ID = 0.3A | 5.9 | ns |
| Source Drain Diode Characteristics | |||
| VSD | IS = 0.5A, VGS = 0V, TJ = 25C | 0.90 - 1.2 | V |
| Package Dimensions (SOT-723) | |||
| Symbol | MIN. | TYP. | MAX. |
| A | 0.430 | - | 0.500 |
| A1 | 0.000 | - | 0.050 |
| b | 0.170 | 0.220 | 0.270 |
| b1 | 0.270 | - | 0.370 |
| C | 0.080 | - | 0.150 |
| D | 1.150 | - | 1.250 |
| E | 1.150 | - | 1.250 |
| E1 | 0.750 | - | 0.850 |
| e | - | 0.800 | - |
| - | 7REF. | - | |
(1) Pulse test pulse width <=300us, duty cycle <= 2%.
Specifications are subject to change without notice. Please refer to http://www.born-tw.com for current information.
2511241925_BORN-BM138KE_C52993698.pdf
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