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quality Power switch pwm and load switch applications blue rocket brcs4606sc sop8 mosfet halogen free design factory
quality Power switch pwm and load switch applications blue rocket brcs4606sc sop8 mosfet halogen free design factory

Power switch pwm and load switch applications blue rocket brcs4606sc sop8 mosfet halogen free design

Key Attributes
Model Number: BRCS4606SC
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
6.9A
Operating Temperature -:
-55℃~+150℃
RDS(on):
65mΩ@10V
Gate Threshold Voltage (Vgs(th)):
1.3V@250uA
Type:
N-Channel + P-Channel
Reverse Transfer Capacitance (Crss@Vds):
122pF
Number:
1 N-Channel + 1 P-Channel
Output Capacitance(Coss):
190pF
Input Capacitance(Ciss):
920pF
Pd - Power Dissipation:
2W
Gate Charge(Qg):
18.5nC@10V
Mfr. Part #:
BRCS4606SC
Package:
SOP-8
Product Description

Product Overview

The BRCS4606SC is a complementary enhancement mode MOSFET offered in a SOP-8 plastic package. It is designed for high-efficiency switching DC/DC converters and power switch applications. This device is well-suited for use as a load switch or in PWM applications. The product is halogen-free.

Product Attributes

  • Brand: FS (implied by URL http://www.fsbrec.com)
  • Package Type: SOP-8
  • Certifications: Halogen-free

Technical Specifications

Parameter Symbol N-channel Rating P-channel Rating Unit
Drain-Source Voltage VDS 30 -30 V
Gate-Source Voltage VGS 12 V
Continuous Drain Current (TA=25) ID 6.9 -6.0 A
Continuous Drain Current (TA=70) ID 5.8 -5.0 A
Pulsed Drain Current IDM 30 A
Power Dissipation (TA=25) PD 2 W
Power Dissipation (TA=70) PD 1.44 W
Maximum Junction-to-Ambient Thermal Resistance (t10s) RJA(t10s) 62.5 /W
Maximum Junction-to-Ambient Thermal Resistance RJA 110 /W
Maximum Junction-to-Lead Thermal Resistance RJL 60 /W
Junction and Storage Temperature Range TJ,TSTG -55 to +150

N-CHANNEL Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=250A 30 V
Zero Gate Voltage Drain Current IDSS VDS=24V, VGS=0V 1.0 A
Zero Gate Voltage Drain Current (TJ=55) IDSS VDS=24V, VGS=0V 5.0 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=250A 0.65 1.3 V
On State Drain Current ID(on) VDS=4.5V, VGS=5.0V 6.9 A
Static Drain-Source On-Resistance RDS(on) VGS=10V, ID=6.9A 24 32 m
Static Drain-Source On-Resistance (TJ=125) RDS(on) VGS=10V, ID=6.9A 32.3 38 m
Static Drain-Source On-Resistance RDS(on) VGS=4.5V, ID=5.0A 27 36 m
Forward Transconductance gFS VDS=5.0V, ID=5.0A 9 S
Diode Forward Voltage VSD VGS=0V, IS=1.0A 0.76 1.0 V
Input Capacitance Ciss VDS=15V, VGS=0V, f=1.0MHz 680 pF
Output Capacitance Coss VDS=15V, VGS=0V, f=1.0MHz 102 pF
Reverse Transfer Capacitance Crss VDS=15V, VGS=0V, f=1.0MHz 77 pF
Gate Resistance Rg VDS=0V, VGS=0V, f=1.0MHz 3.0
Total Gate Charge (10V) Qg VGS=10V, VDS=15V, ID=6.9A 13.84 nC
Total Gate Charge (4.5V) Qg VGS=4.5V, VDS=15V, ID=5.0A 6.74 nC
Gate-Source Charge Qgs VGS=10V, VDS=15V, ID=6.9A 1.82 nC
Gate-Drain Charge Qgd VGS=10V, VDS=15V, ID=6.9A 3.2 nC
Turn-On Delay Time td(on) VDS=15V, VGS=10V, RL=2.1, RGEN=3 4.6 ns
Turn-On Rise Time tr VDS=15V, VGS=10V, RL=2.1, RGEN=3 4.1 ns
Turn-Off Delay Time td(off) VDS=15V, VGS=10V, RL=2.1, RGEN=3 20.6 ns
Turn-Off Fall Time tf VDS=15V, VGS=10V, RL=2.1, RGEN=3 5.2 ns
Body Diode Reverse Recovery Time trr IF=6.9A, dI/dt=100A/s 16.5 ns
Body Diode Reverse Recovery Charge Qrr IF=6.9A, dI/dt=100A/s 7.8 nC

P-CHANNEL Electrical Characteristics (Ta=25)

Parameter Symbol Test Conditions Min Typ Max Unit
Drain-Source Breakdown Voltage BVDSS VGS=0V, ID=-250A -30 V
Zero Gate Voltage Drain Current IDSS VDS=-24V, VGS=0V -1.0 A
Zero Gate Voltage Drain Current (TJ=55) IDSS VDS=-24V, VGS=0V -5.0 A
Gate-Body Leakage Current IGSS VGS=12V, VDS=0V 100 nA
Gate Threshold Voltage VGS(th) VDS=VGS, ID=-250A -0.5 -0.7 -1.3 V
On State Drain Current ID(on) VDS=-4.5V, VGS=-5.0V -6 A
Static Drain-Source On-Resistance RDS(on) VGS=-10V, ID=-6.0A 52 65 m
Static Drain-Source On-Resistance (TJ=125) RDS(on) VGS=-10V, ID=-6.0A 57 86 m
Static Drain-Source On-Resistance RDS(on) VGS=-4.5V, ID=-5.0A 59 75 m
Forward Transconductance gFS VDS=-5.0V, ID=-5.0A 12 S
Diode Forward Voltage VSD VGS=0V, IS=-1.0A -0.76 -1.0 V
Input Capacitance Ciss VDS=-15V, VGS=0V, f=1.0MHz 920 pF
Output Capacitance Coss VDS=-15V, VGS=0V, f=1.0MHz 190 pF
Reverse Transfer Capacitance Crss VDS=-15V, VGS=0V, f=1.0MHz 122 pF
Gate Resistance Rg VDS=0V, VGS=0V, f=1.0MHz 3.6
Total Gate Charge (10V) Qg VGS=-10V, VDS=-15V, ID=-6.0A 18.5 nC
Total Gate Charge (4.5V) Qg VGS=-4.5V, VDS=-15V, ID=-5.0A 9.6 nC
Gate-Source Charge Qgs VGS=-10V, VDS=-15V, ID=-6.0A 2.7 nC
Gate-Drain Charge Qgd VGS=-10V, VDS=-15V, ID=-6.0A 4.5 nC
Turn-On Delay Time td(on) VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 7.7 ns
Turn-On Rise Time tr VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 5.7 ns
Turn-Off Delay Time td(off) VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 20.2 ns
Turn-Off Fall Time tf VDS=-15V, VGS=-10V, RL=2.7, RGEN=3 9.5 ns
Body Diode Reverse Recovery Time trr IF=-6.0A, dI/dt=100A/s 20 ns
Body Diode Reverse Recovery Charge Qrr IF=-6.0A, dI/dt=100A/s 8.8 nC

Package Dimensions

(Image of package dimensions would be here if available in text)

Marking Instructions

  • BR: Company Code
  • 4606: Product Type
  • ****: Lot No. Code (changes with Lot No.)

Temperature Profile for IR Reflow Soldering (Pb-Free)

  • Preheating: 150~180, Time: 60~90 sec.
  • Peak Temp.: 2455, Duration: 50.5 sec.
  • Cooling Speed: 2~10/sec.

Resistance to Soldering Heat Test Conditions

  • Temp.: 2605
  • Time: 101 sec.

Packaging Specifications

Package Type Units/Reel Reels/Inner Box Units/Inner Box Inner Boxes/Outer Box Units/Outer Box Dimension (Reel) Dimension (Inner Box) Dimension (Outer Box)
SOP/ESOP-8 4,000 2 8,000 6 48,000 1312 36036050 380335366

2410121250_BLUE-ROCKET-BRCS4606SC_C305442.pdf

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