Surface Mount N Channel MOSFET BORN AO3416 with Ultra Low On Resistance and High Density Cell Design
Key Attributes
Model Number:
AO3416
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
6.5A
Operating Temperature -:
-25℃~+150℃
RDS(on):
22mΩ@4.5V,6.5A
Gate Threshold Voltage (Vgs(th)):
1V
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
1.4W
Input Capacitance(Ciss):
1.16nF@10V
Gate Charge(Qg):
-
Mfr. Part #:
AO3416
Package:
SOT-23
Product Description
Product Overview
The AO3416 is an N-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. It is available in a SOT-23 surface mount package. This MOSFET offers a drain-source voltage of up to 20V and a continuous drain current of 6.5A, with low on-resistance values of 22m at VGS=4.5V and 26m at VGS=2.5V. Its design is optimized for efficient power management in surface-mount applications.
Product Attributes
- Brand: AO3416 (Implied from datasheet)
- Package Type: SOT-23
- Technology: Advanced trench process
- Cell Design: High Density Cell Design
- Channel Type: N-Channel
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Conditions |
|---|---|---|---|---|---|---|
| Drain-Source Voltage | BVDSS | 20 | V | ID = 250uA, VGS=0V | ||
| Gate-Source Voltage | VGS | 8 | V | |||
| Drain Current (continuous) | ID | 6.5 | A | @TA=25 | ||
| Drain Current (pulsed) | IDM | 30 | A | |||
| Total Device Dissipation | PD | 1400 | mW | TA=25 | ||
| Junction Temperature | TJ | 150 | ||||
| Storage Temperature | Tstg | -55 | +150 | |||
| Gate Threshold Voltage | VGS(th) | 0.4 | 1 | V | ID = 250uA, VGS= VDS | |
| Diode Forward Voltage Drop | VSD | 1 | V | IS= 1 A,VGS=0V | ||
| Zero Gate Voltage Drain Current | IDSS | 1 | uA | VGS=0V, VDS= 16V , TA=25 | ||
| Zero Gate Voltage Drain Current | IDSS | 5 | uA | VGS=0V, VDS= 16V , TA=55 | ||
| Gate Body Leakage | IGSS | +10 | nA | VGS=+8 V, VDS=0V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 22 | m | ID= 6.5 A,VGS= 4.5V | ||
| Static Drain-Source On-State Resistance | RDS(ON) | 26 | m | ID= 5.5 A,VGS= 2.5 V | ||
| Input Capacitance | CISS | 1160 | pF | VGS=0V, VDS= 10 V,f=1MHz | ||
| Output Capacitance | COSS | 180 | pF | VGS=0V, VDS= 10 V,f=1MHz | ||
| Turn-ON Time | t(on) | 8 | ns | VDS= 10 V, ID= 3 A, RGEN=6 | ||
| Turn-OFF Time | t(off) | 60 | ns | VDS= 10 V, ID= 3 A, RGEN=6 |
2410122007_BORN-AO3416_C5148471.pdf
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