Trench DMOS N Channel 40 Volt MOSFET Bruckewell MSH40N70D Suitable for High Energy Pulse Applications
Key Attributes
Model Number:
MSH40N70D
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
70A
Operating Temperature -:
-55℃~+150℃
RDS(on):
7.2mΩ@10V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Pd - Power Dissipation:
83W
Input Capacitance(Ciss):
1.54nF@25V
Gate Charge(Qg):
16.2nC@10V
Mfr. Part #:
MSH40N70D
Package:
PDFN5x6-8
Product Description
Product Overview
The MSH40N70D is an N-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust withstand capability for high energy pulses in avalanche and commutation modes. It is well-suited for high efficiency, fast switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. Typical applications include MB, VGA, Vcore, POL applications, and SMPS 2nd SR.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- Packaging: PDFN 5X6 Dual
- Packing: 3,000/Reel
Technical Specifications
| General Specifications | ||
|---|---|---|
| Model | MSH40N70D | N-Channel 40-V (D-S) MOSFET |
| RDS(ON) | 7.2m | @ VGS =10V |
| Features | Fast switching, Improve dv/dt Capability, 100% EAS Guaranteed, Green Device Available | |
| Maximum Ratings and Electrical Characteristics | |||
|---|---|---|---|
| Symbol | Parameter | Value | Units |
| VDS | Drain-Source Voltage | 40 | V |
| VGS | Gate-Source Voltage | 20 | V |
| ID | Continuous Drain Current (TC =25C) | 70 | A |
| ID | Continuous Drain Current (TC =100C) | 44 | A |
| IDM | Pulsed Drain Current | 280 | A |
| IAS | Single Pulse Avalanche Current (L =0.1mH) | 39 | A |
| EAS | Single Pulse Avalanche Energy (L =0.1mH) | 76 | mJ |
| PD | Power Dissipation (TC =25C) | 83 | W |
| PD | Power Dissipation (TA =25C) | 2 | W |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to +150 | C |
| Thermal Resistance Ratings | |||
|---|---|---|---|
| Symbol | Parameter | Maximum | Units |
| RJA | Maximum Junction-to-Ambient | 62.5 | C/W |
| RJC | Maximum Junction-to-Case | 1.5 | C/W |
| Electrical Characteristics (TJ=25C unless otherwise specified) | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Typ. | Units |
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250A | 1.6 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | 40 | V |
| gfs | Forward Transconductance | VDS =10V, ID =3A | 16 | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =20V | 100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =40V, VGS =0V, TJ =25C | 1 | A |
| IDSS | Drain-Source Leakage Current | VDS =32V, VGS =0V, TJ =125C | 10 | A |
| RDS (on) | Static Drain-Source On-Resistance | VGS =10V, ID =20A | 7.2 | m |
| RDS (on) | Static Drain-Source On-Resistance | VGS =4.5V, ID =10A | 9.3 | m |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =20A | 20 | mJ |
| VSD | Diode Forward Voltage | IS =20A, VGS =0V, TJ =25C | 1.2 | V |
| IS | Continuous Source Current | - | 70 | A |
| ISM | Pulsed Source Current | VG =VD =0V, Force Current | 140 | A |
| Dynamic Characteristics | ||||
|---|---|---|---|---|
| Symbol | Parameter | Test Conditions | Typ. | Units |
| Qg | Total Gate Charge | - | 16.2 | nC |
| Qgs | Gate-Source Charge | - | 3.85 | nC |
| Qgd | Gate-Drain Charge | VDS =20V, ID =10A, VGS =4.5V | 6.05 | nC |
| td(on) | Turn-On Delay Time | - | 13.6 | ns |
| tr | Rise Time | - | 2.5 | ns |
| td(off) | Turn-Off Delay Time | - | 68 | ns |
| tf | Fall Time | VDS =15V, ID =1A, VGS =10V, RG =6 | 5 | ns |
| CISS | Input Capacitance | VDS =25V, VGS =0V, f =1.0MHz | 1540 | pF |
| COSS | Output Capacitance | VDS =25V, VGS =0V, f =1.0MHz | 171 | pF |
| CRSS | Reverse Transfer Capacitance | VDS =25V, VGS =0V, f =1.0MHz | 115 | pF |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | 1.4 | |
| Package Dimensions (PDFN 5X6) | |||
|---|---|---|---|
| REF. | Millimeter (Min.) | Millimeter (Nom.) | Millimeter (Max.) |
| A | 0.90 | 1.00 | 1.10 |
| A1 | 0.00 | - | 0.05 |
| b | 0.33 | - | 0.51 |
| c | 0.20 | - | 0.30 |
| D | 4.80 | - | 5.00 |
| E | 5.70 | - | 5.90 |
| e | - | 1.27 | - |
| H | 5.90 | - | 6.20 |
| G | 0.50 | - | 0.70 |
| L1 | 0.06 | - | 0.20 |
| F | 1.6 Ref. | - | - |
| K | - | 1.60 | - |
2412061551_Bruckewell-MSH40N70D_C42407738.pdf
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