Low On Resistance P Channel MOSFET BORN IRLML6402 with SOT 23 Package and Low Gate Threshold Voltage
Key Attributes
Model Number:
IRLML6402
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
3.7A
Operating Temperature -:
-55℃~+150℃
RDS(on):
80mΩ@2.5V,3.1A
Gate Threshold Voltage (Vgs(th)):
1.2V
Number:
1 P-Channel
Input Capacitance(Ciss):
600pF
Pd - Power Dissipation:
1.1W
Mfr. Part #:
IRLML6402
Package:
SOT-23
Product Description
Product Overview
The IRLML6402 is a P-Channel MOSFET featuring advanced trench process technology and a high-density cell design for ultra-low on-resistance. Packaged in a SOT-23 for surface mounting, this MOSFET is suitable for various applications requiring efficient power management. Key electrical characteristics include a low Gate Threshold Voltage and low Static Drain-Source On-State Resistance at specified current and voltage levels.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Model: IRLML6402
- Package: SOT-23
- Origin: Not explicitly stated, but associated with www.born-tw.com
- Revision: 2018
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit | Notes |
|---|---|---|---|---|---|---|
| Drain-Source Breakdown Voltage | BVDSS | -20 | - | - | V | (ID = -250uA,VGS=0V) |
| Gate Threshold Voltage | VGS(th) | -0.4 | - | -1.2 | V | (ID = -250uA,VGS= VDS) |
| Diode Forward Voltage Drop | VSD | - | - | -1.2 | V | (IS= -1A,VGS=0V) |
| Zero Gate Voltage Drain Current | IDSS | - | - | -1 | uA | (VGS=0V, VDS= -20V) @ TA=25 |
| Zero Gate Voltage Drain Current | IDSS | - | - | -25 | uA | (VGS=0V, VDS= -20V) @ TA=70 |
| Gate Body Leakage | IGSS | - | - | +100 | nA | (VGS=+12V, VDS=0V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 65 | - | m | (ID= -3.7A,VGS= -4.5V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 80 | - | m | (V = -4.5V, TYP =50m) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 135 | - | m | (ID= -3.1A,VGS= -2.5V) |
| Static Drain-Source On-State Resistance | RDS(ON) | - | 50 | - | m | (V = -2.5V, TYP =80m) |
| Input Capacitance | CISS | - | 600 | - | pF | (VGS=0V, VDS= -10V,f=1MHz) |
| Output Capacitance | COSS | - | 120 | - | pF | (VGS=0V, VDS= -10V,f=1MHz) |
| Turn-ON Time | t(on) | - | 8 | - | ns | (VDS= -10V, ID= -3.7A, RGEN=6) |
| Turn-OFF Time | t(off) | - | 60 | - | ns | (VDS= -10V, ID= -3.7A, RGEN=6) |
| Drain-Source Voltage | BVDSS | -20 | - | - | V | |
| Gate- Source Voltage | VGS | - | - | +12 | V | |
| Drain Current (continuous) | ID | - | - | -3.7 | A | |
| Drain Current (pulsed) | IDM | - | - | -15 | A | |
| Total Device Dissipation | PD | - | - | 1100 | mW | @TA=25 |
| Junction Temperature | TJ | - | - | 150 | ||
| Storage Temperature | Tstg | -55 | - | +150 |
Ordering Information
| Order Code | Package | Base Qty | Delivery Mode | Marking |
|---|---|---|---|---|
| IRLML6402 | SOT-23 | 3K | Tape and reel | 6402 |
2410121806_BORN-IRLML6402_C5148470.pdf
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