N Channel MOSFET for Power Switch Circuits BORN BMF4N65 Featuring Fast Switching and Low Gate Charge
Key Attributes
Model Number:
BMF4N65
Product Custom Attributes
Drain To Source Voltage:
650V
Configuration:
-
Current - Continuous Drain(Id):
4A
Operating Temperature -:
-
RDS(on):
2.8Ω@10V
Gate Threshold Voltage (Vgs(th)):
4V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
-
Number:
1 N-channel
Input Capacitance(Ciss):
610pF@25V
Pd - Power Dissipation:
30W
Gate Charge(Qg):
15nC@10V
Mfr. Part #:
BMF4N65
Package:
TO-220F
Product Description
Product Overview
The BMx4N65 is a high-performance N-Channel MOSFET from BORN SEMICONDUCTOR, INC. Designed for power switch circuits in adaptors and chargers, this MOSFET features a high drain-source voltage (VDSS) of 650V and a continuous drain current (ID) of 4A. It offers fast switching capabilities and low gate charge, contributing to efficient power conversion. The device is available in multiple package types, including TO-220AB, TO-220F, TO-263, and TO-252, catering to various application needs.
Product Attributes
- Brand: BORN SEMICONDUCTOR, INC.
- Product Line: BMx4N65
- Type: N-Channel MOSFET
- Material: Molded Plastic (UL Flammability Classification Rating 94V-0)
- Compliance: EU RoHS 2011/65/EU directive
- Solder Bath Temperature: 275C maximum, 10s
Technical Specifications
| Model | Features | Applications | Package | Ordering Code | Base Quantity | Delivery Mode |
|---|---|---|---|---|---|---|
| BMx4N65 | VDSS=650V, ID=4A, RDS(ON) @VGS=10V, MAX=2.8, Fast Switching, Low Gate Charge | Power switch circuit of adaptor and charger | TO-220AB | BME4N65/G | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx4N65 | VDSS=650V, ID=4A, RDS(ON) @VGS=10V, MAX=2.8, Fast Switching, Low Gate Charge | Power switch circuit of adaptor and charger | TO-220F | BMF4N65/G | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx4N65 | VDSS=650V, ID=4A, RDS(ON) @VGS=10V, MAX=2.8, Fast Switching, Low Gate Charge | Power switch circuit of adaptor and charger | TO-263 | BMK4N65/G | 50pcs/tube | 1kpcs/box, 5kpcs/carton |
| BMx4N65 | VDSS=650V, ID=4A, RDS(ON) @VGS=10V, MAX=2.8, Fast Switching, Low Gate Charge | Power switch circuit of adaptor and charger | TO-263 (Reel) | BMK4N65-R/G | 800pcs/reel | 800pcs/box, 4kpcs/carton |
| BMx4N65 | VDSS=650V, ID=4A, RDS(ON) @VGS=10V, MAX=2.8, Fast Switching, Low Gate Charge | Power switch circuit of adaptor and charger | TO-252 | BMI4N65/G | 2500pcs/reel | 5kpcs/box, 25kpcs/carton |
| Symbol | Parameters | Conditions | Min. | Typ. | Max. | Unit | TO-220AB/TO-263 | TO-220F | TO-252 |
|---|---|---|---|---|---|---|---|---|---|
| VDS | Drain-Source Voltage | 650 | V | ||||||
| VGS | Gate-Source Voltage | 30 | V | ||||||
| ID | Continue Drain Current | @TA=25C | 4 | A | |||||
| IDM | Pulsed Drain Current (Note1) | 16 | A | ||||||
| PD | Power Dissipation | @TA=25C | 75 / 30 / 75 | W | |||||
| EAS | Single Pulse Avalanche Energy (Note1) | 200 | mJ | ||||||
| TJ | Junction Temperature Range | -55 | 150 | C | |||||
| TSTG | Storage Temperature Range | -55 | 150 | C | |||||
| RJC | Thermal Resistance, Junction to Case | @TA=25C | 1.67 / 4.17 / 1.67 | C/W | |||||
| RJA | Thermal Resistance, Junction to Ambient | @TA=25C | 62.5 / 62.5 / 100 | C/W |
| Symbol | Parameters | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| BVDSS | Drain-Source Breakdown Voltage | VGS = 0V, ID=250uA | 650 | V | ||
| IDSS | Zero Gate Voltage Drain Current | VDS = 650V, VGS=0V | 1 | A | ||
| IGSS | Gate-Source Leakage Current | VGS = 30V, VDS=0V | 100 | nA | ||
| VGS(TH) | Gate Threshold Voltage | VGS = VDS, ID=250uA | 2 | 4 | V | |
| RDS(on) | Static Drain-source On Resistance | VGS=10V, ID=2A | 2.8 | |||
| gfs | Forward Transconductance | VDS=15V, ID=2A | 3.5 | S | ||
| Ciss | Input capacitance | VDS = 25V, VGS =0V, f = 1MHz | 610 | pF | ||
| Coss | Output capacitance | VDS = 25V, VGS =0V, f = 1MHz | 53 | pF | ||
| Crss | Reverse transfer capacitance | VDS = 25V, VGS =0V, f = 1MHz | 4 | pF | ||
| Td(on) | Turn-on delay time (Note1) | VDD=325V, ID =4A, RG =10 | 14 | ns | ||
| Tr | Turn-on Rise time (Note1) | VDD=325V, ID =4A, RG =10 | 16 | ns | ||
| Td(off) | Turn -Off Delay Time (Note1) | VDD=325V, ID =4A, RG =10 | 32 | ns | ||
| Tf | Turn -Off Fall time (Note1) | VDD=325V, ID =4A, RG =10 | 11 | ns | ||
| Qgs | Gate to Source Charge (Note1) | VDD=520V, VGS=10V, ID=4A | 3 | nC | ||
| Qgd | Gate to Drain Charge (Note1) | VDD=520V, VGS=10V, ID=4A | 7 | nC | ||
| Qg | Total Gate Charge (Note1) | VDD=520V, VGS=10V, ID=4A | 15 | nC | ||
| VSD | Diode Forward Voltage | ISD=4A | 1.4 | V | ||
| IS | Diode Forward Current | 4 | A | |||
| ISM | Diode Pulsed Current | 16 | A | |||
| Trr | Reverse Recovery Time (Note1) | ISD =4A, VGS=0V, dIF/dt=100A/s | 250 | ns | ||
| Qrr | Reverse Recovery Charge (Note1) | ISD =4A, VGS=0V, dIF/dt=100A/s | 1.2 | C |
2412021443_BORN-BMF4N65_C42402384.pdf
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