Power Switching P Channel MOSFET BORN SI2305 with Low On Resistance and Compact SOT 23 Package Design
Key Attributes
Model Number:
SI2305
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
4.1A
Operating Temperature -:
-55℃~+150℃
RDS(on):
52mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
1V@250uA
Reverse Transfer Capacitance (Crss@Vds):
87pF@6V
Number:
1 P-Channel
Input Capacitance(Ciss):
415pF@6V
Pd - Power Dissipation:
1.25W
Gate Charge(Qg):
10nC
Mfr. Part #:
SI2305
Package:
SOT-23
Product Description
Product Overview
The SI2305 is a P-Channel MOSFET designed with advanced trench process technology and high-density cell design for ultra-low on-resistance. It offers excellent performance characteristics, making it suitable for various applications requiring efficient power switching. Key features include a low on-state resistance, fast switching speeds, and robust thermal management capabilities, all packaged in a compact SOT-23 form factor.
Product Attributes
- Brand: Not explicitly stated, but associated with www.born-tw.com
- Product Type: P-Channel MOSFET
- Package: SOT-23
- Certifications: ROHS
- Technology: Advanced trench process
Technical Specifications
| Parameter | Test Condition | Symbol | Min. | Typ. | Max. | Unit |
|---|---|---|---|---|---|---|
| Maximum Ratings & Thermal Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Drain-Source Voltage | VDS | -20 | V | |||
| Gate-Source Voltage | VGS | 12 | V | |||
| Continuous Drain Current | ID | -4.1 | A | |||
| Pulsed Drain Current | 1) | IDM | -15 | A | ||
| Maximum Power Dissipation | TA = 25 | PD | 1.25 | W | ||
| Maximum Power Dissipation | TA = 75 | PD | 0.8 | W | ||
| Operating Junction and Storage Temperature Range | TJ, Tstg | -55 | 150 | |||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | 3) Surface Mounted on FR4 Board, t 5 sec. | RthJA | 100 | /W | ||
| Junction-to-Ambient Thermal Resistance (PCB mounted) | 2) Surface Mounted on FR4 Board. | RthJA | 166 | /W | ||
| Electrical Characteristics (Ratings at 25 ambient temperature unless otherwise specified.) | ||||||
| Static Drain-Source Breakdown Voltage | VGS = 0V, ID = -250uA | BVDSS | -20 | V | ||
| Drain-Source On-State Resistance | VGS = -4.5V, ID = -4.1A | RDS(on) | 46 | 52 | m | |
| Drain-Source On-State Resistance | VGS = -2.5V, ID = -3.0A | RDS(on) | 60 | 75 | m | |
| Gate Threshold Voltage | VDS =VGS, ID = -250uA | VGS(th) | -0.8 | -1.6 | V | |
| Zero Gate Voltage Drain Current | VDS = -20V, V GS = 0V | IDSS | -1 | -10 | uA | |
| Zero Gate Voltage Drain Current | VDS = -20V, V GS = 0V, TJ=55 oC | IDSS | -10 | uA | ||
| Gate Body Leakage | VGS = 12V, V DS = 0V | IGSS | 100 | nA | ||
| Forward Transconductance | VDS = -5V, ID = -3.5A | gfs | 6.5 | S | ||
| Dynamic (Pulse test: pulse width 300us, duty cycle 2%) | ||||||
| Total Gate Charge | VDS = -6V, ID -3.5A, VGS = -4.5V | Qg | 5.8 | 10 | nC | |
| Gate-Source Charge | Qgs | 0.85 | nC | |||
| Gate-Drain Charge | Qgd | 1.7 | nC | |||
| Turn-On Delay Time | VDD = -6V, RL=6, ID -1.A, VGEN = -4.5V, RG = 6 | td(on) | 13 | 25 | ns | |
| Turn-On Rise Time | tr | 36 | 60 | ns | ||
| Turn-Off Delay Time | td(off) | 42 | 70 | ns | ||
| Turn-Off Fall Time | tf | 34 | 60 | ns | ||
| Input Capacitance | VDS = -6V, VGS = 0V, f = 1.0 MHz | Ciss | 415 | pF | ||
| Output Capacitance | Coss | 223 | pF | |||
| Reverse Transfer Capacitance | Crss | 87 | pF | |||
| Source-Drain Diode | ||||||
| Max. Diode Forward Current | IS | -1.6 | A | |||
| Diode Forward Voltage | IS = -1.6A, VGS = 0V | VSD | -0.8 | -1.2 | V | |
2409292333_BORN-SI2305_C344006.pdf
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