N Channel Enhancement Mode MOSFET BORN SI2328 Featuring High Density Cell Design and ROHS Compliance
Key Attributes
Model Number:
SI2328
Product Custom Attributes
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
1.5A
Operating Temperature -:
-55℃~+150℃
RDS(on):
270mΩ@10V
Gate Threshold Voltage (Vgs(th)):
3V@250uA
Number:
1 N-channel
Output Capacitance(Coss):
38pF
Input Capacitance(Ciss):
326pF
Pd - Power Dissipation:
1.25W
Mfr. Part #:
SI2328
Package:
SOT-23
Product Description
Product Overview
The SI2328 is an N-Channel Enhancement-Mode MOSFET featuring advanced trench process technology and high-density cell design for ultra-low on-resistance. This MOSFET is suitable for various applications requiring efficient power management. It is available in a SOT-23 package.
Product Attributes
- Technology: Advanced trench process
- Cell Design: High Density Cell Design
- Type: N-Channel Enhancement-Mode MOSFET
- Package: SOT-23
- Compliance: ROHS
Technical Specifications
| Characteristic | Symbol | Min | Typ | Max | Unit |
|---|---|---|---|---|---|
| Maximum Ratings | |||||
| Drain-Source Voltage | BVDSS | 100 | V | ||
| Gate-Source Voltage | VGS | +20 | V | ||
| Drain Current (continuous) | ID | 1.5 | A | ||
| Drain Current (pulsed) | IDM | 6 | A | ||
| Total Device Dissipation (TA=25) | PD | 1250 | mW | ||
| Junction Temperature | TJ | 150 | |||
| Storage Temperature | Tstg | -55 | +150 | ||
| Electrical Characteristics | |||||
| Drain-Source Breakdown Voltage (ID = -250uA,VGS=0V) | BVDSS | 100 | V | ||
| Gate Threshold Voltage (ID = -250uA,VGS= VDS) | VGS(th) | 1 | 3 | V | |
| Diode Forward Voltage Drop (IS= 1 A,VGS=0V) | VSD | 1.2 | V | ||
| Zero Gate Voltage Drain Current (VGS=0V, VDS= 30V) | IDSS | 1 | uA | ||
| Gate Body Leakage (VGS=+20V, VDS=0V) | IGSS | +100 | nA | ||
| Static Drain-Source On-State Resistance (ID= 1.5A,VGS= 10 V) | RDS(ON) | 230 | 270 | m | |
| Static Drain-Source On-State Resistance (ID= 1 A,VGS= 4.5 V) | RDS(ON) | 275 | 340 | m | |
| Input Capacitance (VGS=10V, VDS= 15 V,f=1MHz) | CISS | 326 | pF | ||
| Output Capacitance (VGS=10V, VDS= 15 V,f=1MHz) | COSS | 38 | pF | ||
| Turn-ON Time (VDS= 50 V, ID= 10 A, RGEN=6) | t(on) | 10 | ns | ||
| Turn-OFF Time (VDS= 50 V, ID= 10 A, RGEN=6) | t(off) | 30 | ns | ||
Package Outline: SOT-23 (UNIT)mm
2410010103_BORN-SI2328_C344007.pdf
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