Low RDS on N Channel MOSFET BORN BMI02N400 with Excellent Thermal Stability and 80 Amp Drain Current
Key Attributes
Model Number:
BMI02N400
Product Custom Attributes
Drain To Source Voltage:
20V
Current - Continuous Drain(Id):
80A
RDS(on):
3mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
700mV@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
395pF
Output Capacitance(Coss):
415pF
Input Capacitance(Ciss):
2.72nF
Pd - Power Dissipation:
57W
Gate Charge(Qg):
37.2nC@4.5V
Mfr. Part #:
BMI02N400
Package:
TO-252-2
Product Description
Product Overview
The BMI02N400 is an N-Channel MOSFET designed for various power management applications. It features an extremely low RDS(on) of typically 3m at VGS=4.5V, offering excellent stability and uniformity. The advanced trench technology and robust package design ensure good heat dissipation, making it suitable for load switching and PWM applications. Key advantages include low gate charge and a maximum drain-source voltage of 20V with a continuous drain current of 80A.
Product Attributes
- Brand: BORNTW (implied from URL)
- Product Type: N-Channel MOSFET
- Package Type: TO-252-2
Technical Specifications
| Parameter | Symbol | Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Features | ||||||
| Drain-Source Voltage | V(BR)DSS | 20 | V | |||
| Drain Current | ID | TC=25C | 80 | A | ||
| RDS(on) | RDS(on)@VGS=4.5V | 3 | 4 | m | ||
| Absolute Maximum Ratings | ||||||
| Drain-Source Voltage | VDSS | (TJ=25C unless otherwise specified) | 20 | V | ||
| Drain Current | ID | TC=25C | 80 | A | ||
| Drain Current | ID | TC=100C | 52 | A | ||
| Drain Current-Pulsed | IDM | (1) | 320 | A | ||
| Gate-Source Voltage | VGSS | 12 | V | |||
| Single Pulsed Avalanche Energy | EAS | (2) | 90 | mJ | ||
| Power Dissipation | PD | TC=25C | 57 | W | ||
| Derate above 25C | 0.54 | W/C | ||||
| Thermal Resistance from Junction to Ambient | RJA | 72.91 | C/W | |||
| Thermal Resistance From Junction to Case | RJC | 2.201 | C/W | |||
| Junction Temperature | TJ | -55 | +150 | C | ||
| Storage Temperature Range | Tstg | -55 | +150 | C | ||
| Electrical Characteristics | ||||||
| Drain-Source Breakdown Voltage | V(BR)DSS | VGS = 0V, ID=250uA | 20 | V | ||
| Zero Gate Voltage Drain Current | IDSS | VDS = 19.5V, VGS=0V | 1 | uA | ||
| Gate-Body Leakage Current | IGSS | VGS = 12V, VDS=0V | 100 | nA | ||
| Gate Threshold Voltage | VGS(TH) | VGS = VDS, ID=250uA | 0.5 | 0.7 | 1.1 | V |
| Static Drain-source On Resistance | RDS(ON) | VGS=4.5V, ID=30A | 3.0 | 4 | m | |
| Static Drain-source On Resistance | RDS(ON) | VGS=2.5V, ID=20A | 3.8 | 5.6 | m | |
| Input capacitance | Ciss | VDS =10V, VGS =0V, f = 1MHz | 2720 | pF | ||
| Output capacitance | Coss | 415 | pF | |||
| Reverse transfer capacitance | Crss | 395 | pF | |||
| Turn-on delay time | Td(on) | VDD=10V, VGS=4.5V, RG =3, ID=30A (3,4) | 10 | ns | ||
| Turn-on Rise time | Tr | 39 | ns | |||
| Turn -Off Delay Time | Td(off) | 71 | ns | |||
| Turn -Off Fall time | Tf | 33 | ns | |||
| Gate to Drain Charge | Qg | VDS=10V, VGS=4.5V, ID=30A (3,4) | 37.2 | nC | ||
| Gate to Source Charge | Qgs | 4.4 | nC | |||
| Gate to Drain Charge | Qgd | 12 | nC | |||
| Continuous Diode Forward Current | IS | 80 | A | |||
| Pulsed Diode Forward Current | ISM | 320 | A | |||
| Diode Forward Voltage | VSD | VGS=0V, IS=30A | 1.2 | V | ||
| Reverse Recovery Time | trr | IF=30A, dIF/dt=100A/us | 26.6 | ns | ||
| Reverse Recovery Charge | Qrr | 9.8 | nC | |||
2505301710_BORN-BMI02N400_C49009908.pdf
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