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quality SOT 23 P Channel MOSFET Bruckewell MS40P05 Suitable for MB VGA Vcore POL and Load Switch Applications factory
quality SOT 23 P Channel MOSFET Bruckewell MS40P05 Suitable for MB VGA Vcore POL and Load Switch Applications factory

SOT 23 P Channel MOSFET Bruckewell MS40P05 Suitable for MB VGA Vcore POL and Load Switch Applications

Key Attributes
Model Number: MS40P05
Product Custom Attributes
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
4.6A
Operating Temperature -:
-55℃~+175℃
RDS(on):
100mΩ@4.5V
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
53pF
Pd - Power Dissipation:
2.5W
Input Capacitance(Ciss):
620pF
Gate Charge(Qg):
6.4nC@4.5V
Mfr. Part #:
MS40P05
Package:
SOT-23
Product Description

Product Overview

The MS40P05AU is a high-performance P-Channel MOSFET featuring extreme high cell density, designed to deliver excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements, is 100% EAS guaranteed, and offers full function reliability. It is suitable for MB, VGA, Vcore, POL applications, and load switches, with AEC-Q101 qualification available.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Type: P-Channel MOSFET
  • Model: MS40P05AU
  • Package Type: SOT-23
  • Certifications: RoHS Compliant, Green Device Available, AEC-Q101 qualification available (suffix-AU)
  • Reliability: 100% EAS Guaranteed, Full Function Reliability Approved

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
Absolute Maximum Ratings
VDS Drain-Source Voltage -40 V
VGS Gate-Source Voltage 20 V
ID Continuous Drain Current1 (TA =25C) -4.6 A
ID Continuous Drain Current1 (TA =100C) -2 A
IDM Pulsed Drain Current1,2 -18 A
IAS Single Pulse Avalanche Current, L =0.1mH3 -13 A
EAS Single Pulse Avalanche Energy, L =0.1mH3 8.4 mJ
PD Power Dissipation4 (TA =25C) 2.5 W
TJ/TSTG Operating Junction and Storage Temperature -55 +175 C
Thermal Resistance Ratings
RJA Maximum Junction-to-Ambient1 125 C/W
RJC Maximum Junction-to-Case1 80 C/W
Electrical Characteristics (TJ=25C unless otherwise specified)
VGS (th) Gate Threshold Voltage VDS =VGS, ID =-250A -1.0 -2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =-250A -40 V
gfs Forward Transconductance VDS =-5V, ID =-3A 5.8 S
IGSS Gate-Source Leakage Current VDS =0V, VGS =20V 100 nA
IDSS Drain-Source Leakage Current VDS =-36V, VGS =0V, TJ =25C
VDS =-36V, VGS =0V, TJ =55C		 -1
-10		 A
RDS (on) Drain-Source On-Resistance2 VGS =-10V, ID =-3A
VGS =-4.5V, ID =-2A		 70
100		 m
EAS Single Pulse Avalanche Energy5 VDD =-25V, IAS =-3.5A 6.1 mJ
VSD Diode Forward Voltage2 IS = -1A, VGS = 0, V TJ =25C -1.2 V
IS Continuous Source Current1,6 VG =VD =0V, Force Current -3.2 A
ISM Pulsed Source Current2,6 -16 A
Dynamic Characteristics
Qg Total Gate Charge2 VDS =-32V ID =-3A VGS =-4.5V 6.4 nC
Qgs Gate-Source Charge 2.1 nC
Qgd Gate-Drain Charge 2.5 nC
td(on) Turn-On Delay Time2 VDS =-20V ID =-3A VGS =-4.5V RG =3.3 4.2 ns
tr Rise Time 23 ns
td(off) Turn-Off Delay Time 26.8 ns
tf Fall Time 20.6 ns
CISS Input Capacitance VDS =-15V VGS =0V f =1.0MHz 620 pF
COSS Output Capacitance 65 pF
CRSS Reverse Transfer Capacitance 53 pF
Rg Gate Resistance VDS =0V, f =1.0MHz 4.3

Notes:
1 The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2 The data tested by pulsed, pulse width 300s, duty cycle 2%.
3 The EAS data shows maximum rating. The test condition is VDD=-25V, VGS=-10V, L=0.1mH, IAS=-13A.
4 The power dissipation is limited by 175 junction temperature.
5 The Min. value is 100% EAS tested guarantee.
6 The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.


2410121535_Bruckewell-MS40P05_C22465593.pdf
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