P Channel MOSFET Bruckewell MSD40P45 with 40 Volt Drain Source Voltage and Avalanche Pulse Handling
Product Overview
The MSD40P45 is a P-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is engineered to minimize RDS(ON), deliver superior switching performance, and provide robust high-energy pulse handling in avalanche and commutation modes. It is ideally suited for high-efficiency, fast-switching applications. The device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full functional reliability approval. Typical applications include MB, VGA, Vcore, POL, Load Switch, and LED applications.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Certifications: RoHS Compliant, Green Device Available
- EAS Guaranteed: 100%
Technical Specifications
| Parameter | Value | Units |
|---|---|---|
| Model | MSD40P45 | |
| Channel Type | P-Channel | |
| Drain-Source Voltage (VDS) | -40 | V |
| Gate-Source Voltage (VGS) | ±20 | V |
| Continuous Drain Current (TC =25°C) | -45 | A |
| Continuous Drain Current (TC =100°C) | -28 | A |
| Pulsed Drain Current (IDM) | -180 | A |
| Single Pulse Avalanche Current (IAS, L=0.1mH) | -51 | A |
| Single Pulse Avalanche Energy (EAS, L=0.1mH) | 130 | mJ |
| Power Dissipation (PD, TC =25°C) | 73.5 | W |
| Power Dissipation (PD, TA =25°C) | 2 | W |
| Operating Junction and Storage Temperature (TJ/TSTG) | -55 to +150 | °C |
| RDS(ON) @ VGS =-10V, ID =-20A | 12 | mΩ |
| RDS(ON) @ VGS =-4.5V, ID =-10A | 15 | mΩ |
| Gate Threshold Voltage (VGS(th)) | -1.0 to -2.5 | V |
| Drain-Source Breakdown Voltage (BVDSS) | -40 | V |
| Package Type | TO-252 | |
| Packing Information | 2,500/Reel |
2404021528_Bruckewell-MSD40P45_C22374934.pdf
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