P Channel 40 Volt MOSFET Bruckewell MSHM40P40 Featuring Trench DMOS Technology and Low On Resistance
Key Attributes
Model Number:
MSHM40P40
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
40V
Current - Continuous Drain(Id):
40A
RDS(on):
21mΩ@4.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
197pF
Number:
1 P-Channel
Output Capacitance(Coss):
230pF
Input Capacitance(Ciss):
3.257nF
Pd - Power Dissipation:
53W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MSHM40P40
Package:
PDFN3.3x3.3-8
Product Description
Product Overview
The MSHM40P40 is a P-Channel 40-V (D-S) MOSFET utilizing advanced trench DMOS technology. This technology is optimized to minimize on-resistance (RDS(ON)), enhance switching performance, and provide robust high energy pulse handling in avalanche and commutation modes. It is well-suited for high-efficiency, fast-switching applications, including notebooks, load switches, networking equipment, and hand-held instruments. The device supports -4.5V gate drive applications and is 100% EAS guaranteed.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Technology: Trench DMOS
- Channel Type: P-Channel
- RoHS Compliant: Yes
- Green Device: Yes
- Package Type: PDFN 3.3X3.3
- Packing: 3,000/Reel
Technical Specifications
| MSHM40P40 P-Channel 40-V (D-S) MOSFET | ||||
|---|---|---|---|---|
| Symbol | Parameter | Condition | Value | Unit |
| Absolute Maximum Ratings | ||||
| VDS | Drain-Source Voltage | (Tc=25C unless otherwise noted) | -40 | V |
| VGS | Gate-Source Voltage | ±20 | V | |
| ID | Continuous Drain Current (TC =25C) | (Note 1) | -40 | A |
| ID | Continuous Drain Current (TC =100C) | (Note 1) | -25 | A |
| IDM | Pulsed Drain Current | (Note 1, 2) | -160 | A |
| IAS | Single Pulse Avalanche Current | L =0.1mH (Note 3) | -51 | A |
| EAS | Single Pulse Avalanche Energy | L =0.1mH (Note 3) | 130 | mJ |
| PD | Power Dissipation | (TC =25C) (Note 4) | 53 | W |
| TJ/TSTG | Operating Junction and Storage Temperature | -55 to 150 | C | |
| Electrical Characteristics | ||||
| VGS(th) | Gate Threshold Voltage | VDS =VGS, ID =250A | -1.0 / -1.6 / -2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250A | -40 | V |
| gfs | Forward Transconductance | VDS =-10V, ID =-5A | 23 | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =-40V, VGS =0V, TJ =25C | -1 | µA |
| IDSS | Drain-Source Leakage Current | VDS =-32V, VGS =0V, TJ =55C | -10 | µA |
| RDS(on) | Static Drain-Source On-Resistance | VGS =-10V, ID =-20A (Note 2) | 10 / 13 | mΩ |
| RDS(on) | Static Drain-Source On-Resistance | VGS =-4.5V, ID =-10A (Note 2) | 15 / 21 | mΩ |
| EAS | Single Pulse Avalanche Energy | VDD =25V, L =0.1mH, IAS =40A (Note 5) | 80 | mJ |
| VSD | Diode Forward Voltage | IS =-1A, VGS =0V, TJ =25C (Note 2) | -1.2 | V |
| IS | Continuous Source Current | VG =VD =0V, Force Current (Note 1, 6) | -40 | A |
| ISM | Pulsed Source Current | (Note 2, 6) | -120 | A |
| Dynamic and Switching Characteristics | ||||
| Qg | Total Gate Charge | VDS =-20V, ID =-20A, VGS =-10V (Note 2) | 60 | nC |
| Qgs | Gate-Source Charge | VDS =-20V, ID =-20A, VGS =-10V (Note 2) | 8.6 | nC |
| Qgd | Gate-Drain Charge | VDS =-20V, ID =-20A, VGS =-10V (Note 2) | 13.9 | nC |
| td(on) | Turn-On Delay Time | VDS =-20V, ID =-20A, VGS =-10V, RL =1Ω (Note 2) | 18 | ns |
| tr | Rise Time | VDS =-20V, ID =-20A, VGS =-10V, RL =1Ω (Note 2) | 4.8 | ns |
| td(off) | Turn-Off Delay Time | VDS =-20V, ID =-20A, VGS =-10V, RG =3Ω (Note 2) | 88.5 | ns |
| tf | Fall Time | VDS =-20V, ID =-20A, VGS =-10V, RG =3Ω (Note 2) | 26 | ns |
| CISS | Input Capacitance | VDS =-20V, VGS =0V, f =1.0MHz | 3257 | pF |
| COSS | Output Capacitance | VDS =-20V, VGS =0V, f =1.0MHz | 230 | pF |
| CRSS | Reverse Transfer Capacitance | VDS =-20V, VGS =0V, f =1.0MHz | 197 | pF |
| Package Dimensions (PDFN 3.3X3.3) | ||||
| REF. | Millimeter (Min.) | Millimeter (Nom.) | Millimeter (Max.) | |
| A | 0.70 | 0.75 | 0.80 | |
| b | 0.25 | 0.30 | 0.35 | |
| C | 0.10 | 0.15 | 0.25 | |
| D | 3.25 | 3.35 | 3.45 | |
| D1 | 3.00 | 3.10 | 3.20 | |
| D2 | 1.78 | 1.88 | 1.98 | |
| D3 | - | 0.13 | - | |
| E | 3.20 | 3.30 | 3.40 | |
| E1 | 3.00 | 3.15 | 3.20 | |
| E2 | 2.39 | 2.49 | 2.59 | |
| e | 0.65 BSC | |||
| H | 0.30 | 0.39 | 0.50 | |
| L | 0.30 | 0.40 | 0.50 | |
| L1 | - | 0.13 | 0.20 | |
| M | - | - | 0.15 | |
| θ | - | 10° | 12° | |
Notes:
- 1. The data tested by surface mounted on a 1 inch FR-4 board with 2OZ copper.
- 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
- 3. A.
- 4. junction temperature.
- 5. .
- 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSHM40P40_C42407743.pdf
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