General purpose NPN transistor CBI SS8050 with SOT23 package and 1.5 amp collector current rating

Key Attributes
Model Number: SS8050
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
300mW
Transition Frequency(fT):
100MHz
Type:
NPN
Current - Collector(Ic):
1.5A
Collector - Emitter Voltage VCEO:
25V
Mfr. Part #:
SS8050
Package:
SOT-23-3L
Product Description

Product Overview

The SS8050 is an NPN transistor designed for general-purpose applications. It is complementary to the SS8550 transistor. This device is housed in a SOT-23 plastic surface-mounted package with 3 leads.

Product Attributes

  • Marking: Y1

Technical Specifications

Parameter Symbol Test Conditions MIN TYP MAX Units
MAXIMUM RATINGS (TA=25 unless otherwise noted)
Collector-Base Voltage VCBO 40 V
Collector-Emitter Voltage VCEO 25 V
Emitter-Base Voltage VEBO 5 V
Collector Current -Continuous IC 1.5 A
Collector Power Dissipation PC 0.3 W
Junction Temperature Tj 150
Storage Temperature Tstg -55 150
ELECTRICAL CHARACTERISTICS (Tamb=25 unless otherwise specified)
Collector-base breakdown voltage V(BR)CBO IC= 100A, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC= 0.1mA, IB=0 25 V
Emitter-base breakdown voltage V(BR)EBO IE=100A, IC=0 5 V
Collector cut-off current ICBO VCB=40V, IE=0 0.1 A
Collector cut-off current ICEO VCB=20V, IE=0 0.1 A
Emitter cut-off current IEBO VEB= 5V, IC=0 0.1 A
DC current gain hFE(1) VCE=1V, IC= 100mA 200 350
hFE(2) VCE=1V, IC= 800mA 40
Collector-emitter saturation voltage VCE(sat) IC=800mA, IB= 80mA 0.5 V
Base-emitter saturation voltage VBE(sat) IC=800mA, IB= 80mA 1.2 V
Transition frequency fT VCE=10V, IC= 50mA, f=30MHz 100 MHz

Package Outline

Plastic surface mounted package; 3 leads SOT-23.

Pinout

  1. BASE
  2. EMITTER
  3. COLLECTOR

2410311341_CBI-SS8050_C5366653.pdf

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