Compact dual PNP transistor solution CBI BC856DW ideal for space constrained electronic applications
Product Overview
This product features two PNP transistors integrated into a single package, offering a compact solution that reduces component count and board space. The dual transistor design ensures no mutual interference between the individual transistors, providing reliable performance. It is suitable for applications requiring two complementary PNP transistors in a space-constrained environment.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Type: Dual Transistor (PNP+PNP)
- Marking: 5Ft 600
- Origin: China
Technical Specifications
| Parameter | Condition | Value | Unit |
|---|---|---|---|
| Collector-Base Voltage (V(BR)CBO) | IC=-10 A, IE=0 | -80 | V |
| Collector-Emitter Voltage (V(BR)CEO) | IC=-10mA, IB=0 | -65 | V |
| Emitter-Base Voltage (V(BR)EBO) | IE=-10 A, IC=0 | -5 | V |
| Collector Cut-off Current (ICBO) | VCB=-30V, IE=0 | -15 | nA |
| Emitter Cut-off Current (IEBO) | VEB=-5V, IC=0 | -100 | nA |
| DC Current Gain (hFE) | VCE=-5V, IC=-2mA | 110 | |
| DC Current Gain (hFE) | IC=-10mA, IB=-0.5mA | -0.1 | |
| Collector-Emitter Saturation Voltage (VCE(sat)) | IC=-100mA, IB=-5mA | -0.3 | V |
| Base-Emitter Saturation Voltage (VBE(sat)) | IC=-10mA, IB=-0.5mA | 0.7 | V |
| Output Capacitance (Cobo) | VCB =-10V, f= 1MHz, IE = 0 | 2.5 | pF |
| Transition Frequency (fT) | VCE =-5V, IC =-10mA, f= 100MHz | 100 | MHz |
| Collector Current (Continuous) | -0.1 | A | |
| Collector Power Dissipation | 0.2 | W | |
| Thermal Resistance (Junction to Ambient) | 625 | C/W | |
| Junction Temperature | 150 | C | |
| Storage Temperature | -55 to 150 | C |
Package Outline Dimensions: SOT-363
2410121844_CBI-BC856DW_C2919797.pdf
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