Compact dual PNP transistor solution CBI BC856DW ideal for space constrained electronic applications

Key Attributes
Model Number: BC856DW
Product Custom Attributes
Emitter-Base Voltage(Vebo):
5V
Current - Collector Cutoff:
15nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
100MHz
Type:
PNP
Number:
2 PNP
Current - Collector(Ic):
100mA
Collector - Emitter Voltage VCEO:
65V
Operating Temperature:
-
Mfr. Part #:
BC856DW
Package:
SOT-363
Product Description

Product Overview

This product features two PNP transistors integrated into a single package, offering a compact solution that reduces component count and board space. The dual transistor design ensures no mutual interference between the individual transistors, providing reliable performance. It is suitable for applications requiring two complementary PNP transistors in a space-constrained environment.

Product Attributes

  • Brand: Heyuan China Base Electronics Technology Co., Ltd.
  • Type: Dual Transistor (PNP+PNP)
  • Marking: 5Ft 600
  • Origin: China

Technical Specifications

Parameter Condition Value Unit
Collector-Base Voltage (V(BR)CBO) IC=-10 A, IE=0 -80 V
Collector-Emitter Voltage (V(BR)CEO) IC=-10mA, IB=0 -65 V
Emitter-Base Voltage (V(BR)EBO) IE=-10 A, IC=0 -5 V
Collector Cut-off Current (ICBO) VCB=-30V, IE=0 -15 nA
Emitter Cut-off Current (IEBO) VEB=-5V, IC=0 -100 nA
DC Current Gain (hFE) VCE=-5V, IC=-2mA 110
DC Current Gain (hFE) IC=-10mA, IB=-0.5mA -0.1
Collector-Emitter Saturation Voltage (VCE(sat)) IC=-100mA, IB=-5mA -0.3 V
Base-Emitter Saturation Voltage (VBE(sat)) IC=-10mA, IB=-0.5mA 0.7 V
Output Capacitance (Cobo) VCB =-10V, f= 1MHz, IE = 0 2.5 pF
Transition Frequency (fT) VCE =-5V, IC =-10mA, f= 100MHz 100 MHz
Collector Current (Continuous) -0.1 A
Collector Power Dissipation 0.2 W
Thermal Resistance (Junction to Ambient) 625 C/W
Junction Temperature 150 C
Storage Temperature -55 to 150 C

Package Outline Dimensions: SOT-363


2410121844_CBI-BC856DW_C2919797.pdf

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