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quality Small power switching P channel MOSFET Bruckewell MS23P03 with trench technology and low gate charge factory
quality Small power switching P channel MOSFET Bruckewell MS23P03 with trench technology and low gate charge factory

Small power switching P channel MOSFET Bruckewell MS23P03 with trench technology and low gate charge

Key Attributes
Model Number: MS23P03
Product Custom Attributes
Drain To Source Voltage:
30V
Current - Continuous Drain(Id):
3.2A
RDS(on):
150mΩ@2.5V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
1.2V@250uA
Type:
P-Channel
Reverse Transfer Capacitance (Crss@Vds):
73pF
Output Capacitance(Coss):
920pF
Input Capacitance(Ciss):
21pF
Pd - Power Dissipation:
1.38W
Gate Charge(Qg):
11.9nC@4.5V
Mfr. Part #:
MS23P03
Package:
SOT-23
Product Description

Product Overview

The MS23P03 is a high-performance P-channel Trench MOSFET designed for small power switching and load switch applications. It features extreme high cell density, providing excellent RDS(ON) and low gate charge. This device meets RoHS and Green Product requirements and offers approved full function reliability. Its advanced Trench technology contributes to a super low gate charge and excellent CdV/dt effect decline. Typical applications include battery protection, load switching, and hand-held instruments.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Type: P-Channel MOSFET
  • Model: MS23P03
  • Technology: Trench
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: SOT-23
  • Packing: 3,000/Reel

Technical Specifications

Parameter Symbol Test Conditions Min. Typ. Max. Units
Drain-Source Voltage VDS -30 V
Gate-Source Voltage VGS ±12 V
Continuous Drain Current (TA =25°C) ID -3.2 A
Continuous Drain Current (TA =70°C) ID -2.6 A
Pulsed Drain Current (TA =25°C) IDM -20 A
Power Dissipation (TA =25°C) PD 1.38 W
Operating Junction and Storage Temperature TJ/TSTG -55 +150 °C
Maximum Junction-to-Ambient (1 inch² FR-4, 2OZ copper) RθJA 90 °C/W
Gate Threshold Voltage VGS (th) VDS =VGS, ID =-250μA -0.5 -1.2 V
Drain-Source Breakdown Voltage BVDSS VGS =0V, ID =-250μA -30 V
Forward Transconductance gfs VDS =-5V, ID =-3A 6 S
Gate-Source Leakage Current IGSS VDS =0V, VGS =±12V ±100 nA
Drain-Source Leakage Current (TJ =25°C) IDSS VDS =-24V, VGS =0V -1 μA
Drain-Source Leakage Current (TJ =55°C) IDSS VDS =-24V, VGS =0V -5 μA
Static Drain-Source On-Resistance (VGS =-10V, ID =-3.2A) RDS (on) 60 mΩ
Static Drain-Source On-Resistance (VGS =-4.5V, ID =-3.0A) RDS (on) 80 mΩ
Static Drain-Source On-Resistance (VGS =-2.5V, ID =-2.0A) RDS (on) 150 mΩ
Diode Forward Voltage (IS =-1.2A, VGS =0V, TJ =25°C) VSD -1.2 V
Continuous Source Current (Diode) IS VG =VD =0V, Force Current -3.2 A
Total Gate Charge Qg VDS =-15V ID =-3A VGS =-4.5V 11.9 nC
Gate-Source Charge Qgs 1.8 nC
Gate-Drain Charge Qgd 3 nC
Turn-On Delay Time td(on) VDS =-15V ID =-3A VGS =-4.5V RG =3.3Ω 6.6 ns
Rise Time tr 28 ns
Turn-Off Delay Time td(off) 46 ns
Fall Time tf 21 ns
Input Capacitance CISS VDS =-15V VGS =0V f =1.0MHz 920 pF
Output Capacitance COSS 73 pF
Reverse Transfer Capacitance CRSS 71 pF

2410121628_Bruckewell-MS23P03_C22465589.pdf

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