NPN and PNP Transistor Pair CBI MMDT4413DW Plastic Encapsulated 4401 4403 for Switching Applications
Key Attributes
Model Number:
MMDT4413DW
Product Custom Attributes
Current - Collector Cutoff:
100nA
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
250MHz
Type:
NPN+PNP
Number:
1 NPN + 1 PNP
Current - Collector(Ic):
600mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMDT4413DW
Package:
SOT-363
Product Description
Product Overview
This product features a complementary pair of plastic-encapsulated transistors, including one 4401-type NPN and one 4403-type PNP transistor. Designed with epitaxial planar die construction, these transistors are ideal for low-power amplification and switching applications. They are manufactured by Heyuan China Base Electronics Technology Co., Ltd.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Package Type: SOT-363
- Construction: Epitaxial Planar Die
Technical Specifications
| NPN 4401 Section | |||
|---|---|---|---|
| Parameter | Symbol | Value | Units |
| Maximum Ratings (Ta = 25 unless otherwise specified) | |||
| Collector-Base Voltage | VCBO | 60 | V |
| Collector-Emitter Voltage | VCEO | 40 | V |
| Emitter-Base Voltage | VEBO | 6 | V |
| Collector Current - Continuous | IC | 0.6 | A |
| Collector Power Dissipation | PC | 0.2 | W |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 to +150 | |
| Electrical Characteristics (Ta=25 unless otherwise specified) | |||
| Collector-base breakdown voltage | V(BR)CBO | 60 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | 40 | V |
| Emitter-base breakdown voltage | V(BR)EBO | 6 | V |
| Collector cut-off current | ICBO | 0.1 | A |
| Collector cut-off current | ICEO | 0.5 | A |
| Emitter cut-off current | IEBO | 0.1 | A |
| DC current gain (hFE(1)) | hFE | 20 | |
| DC current gain (hFE(2)) | hFE | 40 | |
| DC current gain (hFE(3)) | hFE | 80 | |
| DC current gain (hFE(4)) | hFE | 100-300 | |
| DC current gain (hFE(5)) | hFE | 40 | |
| Collector-emitter saturation voltage (VCE(sat)1) | VCE(sat) | 0.4 | V |
| Collector-emitter saturation voltage (VCE(sat)2) | VCE(sat) | 0.75 | V |
| Base-emitter saturation voltage (VBE(sat)1) | VBE(sat) | 0.75-0.95 | V |
| Base-emitter saturation voltage (VBE(sat)2) | VBE(sat) | 1.2 | V |
| Transition frequency | fT | 250 | MHz |
| Output Capacitance | Cob | 6.5 | pF |
| Delay time | td | 15 | nS |
| Rise time | tr | 20 | nS |
| Storage time | tS | 225 | nS |
| Fall time | tf | 30 | nS |
| PNP 4403 Section | |||
|---|---|---|---|
| Parameter | Symbol | Value | Units |
| Maximum Ratings (Ta = 25 unless otherwise specified) | |||
| Collector-Base Voltage | VCBO | -40 | V |
| Collector-Emitter Voltage | VCEO | -40 | V |
| Emitter-Base Voltage | VEBO | -5 | V |
| Collector Current - Continuous | IC | -0.6 | A |
| Collector Power Dissipation | PC | 0.2 | W |
| Thermal Resistance from Junction to Ambient | RJA | 625 | /W |
| Junction Temperature | TJ | 150 | |
| Storage Temperature | Tstg | -55 to +150 | |
| Electrical Characteristics (Ta=25 unless otherwise specified) | |||
| Collector-base breakdown voltage | V(BR)CBO | -40 | V |
| Collector-emitter breakdown voltage | V(BR)CEO | -40 | V |
| Emitter-base breakdown voltage | V(BR)EBO | -5 | V |
| Collector cut-off current | ICBO | -0.1 | A |
| Collector cut-off current | ICEO | -0.5 | A |
| Emitter cut-off current | IEBO | -0.1 | A |
| DC current gain (hFE(1)) | hFE | 30 | |
| DC current gain (hFE(2)) | hFE | 60 | |
| DC current gain (hFE(3)) | hFE | 100 | |
| DC current gain (hFE(4)) | hFE | 100-300 | |
| DC current gain (hFE(5)) | hFE | 20 | |
| Collector-emitter saturation voltage (VCE(sat)1) | VCE(sat) | -0.4 | V |
| Collector-emitter saturation voltage (VCE(sat)2) | VCE(sat) | -0.75 | V |
| Base-emitter saturation voltage (VBE(sat)1) | VBE(sat) | -0.75 to -0.95 | V |
| Base-emitter saturation voltage (VBE(sat)2) | VBE(sat) | -1.3 | V |
| Transition frequency | fT | 200 | MHz |
| Output Capacitance | Cob | 8.5 | pF |
| Delay time | td | 15 | nS |
| Rise time | tr | 20 | nS |
| Storage time | tS | 225 | nS |
| Fall time | tf | 30 | nS |
2410121642_CBI-MMDT4413DW_C5362110.pdf
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