N Channel MOSFET Bruckewell MSD60N50 60 Volt Device with Low Miller Charge and Full Function Approval
Product Overview
The MSD60N50 is an N-Channel 60-V (D-S) MOSFET from Bruckewell Technology Corporation. It utilizes advanced Trench technology and design to achieve excellent RDS(ON) with low gate charge, making it suitable for PWM, load switching, and general-purpose applications. This device is RoHS and Green Product compliant, with 100% EAS guaranteed and full functional reliability approval. Key features include low Miller charge, low input capacitance, and a guaranteed 100% EAS rating. Typical applications encompass motor drives, power tools, and LED lighting.
Product Attributes
- Brand: Bruckewell Technology Corporation
- Product Line: MSD
- Technology: Advanced Trench
- Compliance: RoHS and Green Product
- Reliability: 100% EAS Guaranteed, Full Function Reliability Approved
- Package Type: TO-252
- Packing: 3,000/Reel, 2,500/Reel
Technical Specifications
| Symbol | Parameter | Test Conditions | Min. | Typ. | Max. | Units |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings | ||||||
| VDS | Drain-Source Voltage | 60 | V | |||
| VGS | Gate-Source Voltage | ±20 | V | |||
| ID | Continuous Drain Current1 | (TC =25°C) | 50 | A | ||
| (TC =100°C) | 32 | A | ||||
| IDM | Pulsed Drain Current1,2 | 100 | A | |||
| IAS | Single Pulse Avalanche Current, L =0.1mH3 | 38 | A | |||
| EAS | Single Pulse Avalanche Energy, L =0.1mH3 | 72 | mJ | |||
| PD | Power Dissipation4 | (TC =25°C) | 52 | W | ||
| TJ/TSTG | Operating Junction and Storage Temperature | -55 | +150 | °C | ||
| Thermal Resistance Ratings | ||||||
| RθJA | Maximum Junction-to-Ambient1 | 62 | °C/W | |||
| RθJC | Maximum Junction-to-Case1 | 2.4 | °C/W | |||
| Electrical Characteristics (TJ=25°C unless otherwise specified) | ||||||
| VGS (th) | Gate Threshold Voltage | VDS =VGS, ID =250µA | 1.0 | 1.7 | 2.5 | V |
| BVDSS | Drain-Source Breakdown Voltage | VGS =0V, ID =250µA | 60 | - | - | V |
| gfs | Forward Transconductance | VDS =5V, ID =30A | - | 42 | - | S |
| IGSS | Gate-Source Leakage Current | VDS =0V, VGS =±20V | - | - | ±100 | nA |
| IDSS | Drain-Source Leakage Current | VDS =48V, VGS =0V, TJ =25°C | - | - | 1 | µA |
| VDS =48V, VGS =0V, TJ =125°C | - | - | 10 | µA | ||
| RDS (on) | Static Drain-Source On-Resistance2 | VGS =10V, ID =30A | - | 10.5 | 12 | mΩ |
| VGS =4.5V, ID =15A | - | 12 | 15 | mΩ | ||
| EAS | Single Pulse Avalanche Energy5 | VDD =25V, L =0.1mH, IAS =26A | 33.8 | - | - | mJ |
| VSD | Diode Forward Voltage2 | IS =30A, VGS =0V, TJ =25°C | - | - | 1.2 | V |
| IS | Continuous Source Current1,6 | VG =VD =0V, Force Current | - | - | 50 | A |
| ISM | Pulsed Source Current2,6 | - | - | 100 | A | |
| Dynamic Characteristics | ||||||
| Qg | Total Gate Charge2 | VDS =48V ID =15A VGS =4.5V | -- | 28.7 | -- | nC |
| Qgs | Gate-Source Charge | -- | 10.5 | -- | nC | |
| Qgd | Gate-Drain Charge | -- | 9.9 | -- | nC | |
| td(on) | Turn-On Delay Time2 | VDS =30V ID =15A VGS =10V RG =3.3Ω | -- | 10.4 | -- | ns |
| tr | Rise Time | -- | 9.2 | -- | ns | |
| td(off) | Turn-Off Delay Time | -- | 63 | -- | ns | |
| tf | Fall Time | -- | 4.8 | -- | ns | |
| CISS | Input Capacitance | VDS =15V VGS =0V f =1.0MHz | -- | 3240 | -- | pF |
| COSS | Output Capacitance | -- | 210 | -- | pF | |
| CRSS | Reverse Transfer Capacitance | -- | 146 | -- | pF | |
| Rg | Gate Resistance | VGS =VDS =0V, f =1.0MHz | -- | 1.6 | 3.2 | Ω |
Notes:
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=38A.
4. The power dissipation is limited by 150 junction temperature.
5. The Min. value is 100% EAS tested guarantee.
6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.
2412061551_Bruckewell-MSD60N50_C42407727.pdf
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