High Speed Switching Diode CBI 1N914W with Low Capacitance and Compact Plastic Surface Mount Package
Key Attributes
Model Number:
1N914W
Product Custom Attributes
Reverse Leakage Current (Ir):
5uA@75V
Reverse Recovery Time (trr):
50ns
Operating Junction Temperature Range:
-
Voltage - DC Reverse (Vr) (Max):
100V
Diode Configuration:
Independent
Pd - Power Dissipation:
400mW
Voltage - Forward(Vf@If):
1V@10mA
Current - Rectified:
200mA
Mfr. Part #:
1N914W
Package:
SOD-123
Product Description
Product Overview
The 1N914W is a Silicon Epitaxial Planar Switching Diode designed for high-speed switching applications. It features a compact SOD-123 package, making it suitable for surface-mount designs. This diode offers a high repetitive reverse voltage and average rectified forward current, along with low capacitance and fast reverse recovery time.
Product Attributes
- Marking Code: "W1" or "WJ"
- Package Outline: Plastic surface mounted package; 2 leads SOD-123
Technical Specifications
| Parameter | Symbol | Value | Unit | Notes |
|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 °C) | ||||
| Repetitive Reverse Voltage | VRRM | 100 | V | |
| Average Rectified Forward Current | IF(AV) | 200 | mA | |
| Non-repetitive Peak Forward Surge Current | IFSM | 1 | A | at t = 1 s |
| 2 | A | at t = 1 µs | ||
| Power Dissipation | Ptot | 400 | mW | |
| Thermal Resistance from Junction to Ambient Air | RθJA | 312 | °C/W | |
| Junction Temperature | Tj | 150 | °C | |
| Storage Temperature Range | Tstg | -55 to +150 | °C | |
| Electrical Characteristics (Ta = 25 °C) | ||||
| Forward Voltage | VF | - | 1 V | at IF = 10 mA |
| Reverse Breakdown Voltage | V(BR)R | 75 | V | at IR = 5 µA |
| 100 | V | at IR = 100 µA | ||
| Reverse Current | IR | - | 25 nA | at VR = 20 V |
| - | 5 µA | at VR = 75 V | ||
| - | 50 µA | at VR = 20 V, Tj = 150 °C | ||
| Capacitance | Ctot | - | 4 pF | at VR = 0 V, f = 1 MHz |
| Reverse Recovery Time | trr | - | 50 ns | at IF = IR = 30 mA, Irr = 3 mA, RL = 100 Ω |
2410121313_CBI-1N914W_C2836060.pdf
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