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quality N Channel MOSFET Bruckewell MSD100N25 with Green Product Compliance and Full Function Reliability factory
quality N Channel MOSFET Bruckewell MSD100N25 with Green Product Compliance and Full Function Reliability factory

N Channel MOSFET Bruckewell MSD100N25 with Green Product Compliance and Full Function Reliability

Key Attributes
Model Number: MSD100N25
Product Custom Attributes
Configuration:
-
Drain To Source Voltage:
100V
Current - Continuous Drain(Id):
25A
RDS(on):
48mΩ@10V
Operating Temperature -:
-55℃~+150℃
Gate Threshold Voltage (Vgs(th)):
2.5V@250uA
Type:
N-Channel
Reverse Transfer Capacitance (Crss@Vds):
82pF
Number:
1 N-channel
Output Capacitance(Coss):
137pF
Input Capacitance(Ciss):
3.848nF
Pd - Power Dissipation:
60W
Gate Charge(Qg):
60nC@10V
Mfr. Part #:
MSD100N25
Package:
TO-252
Product Description

Product Overview

The MSD100N25 is a high-performance N-Channel MOSFET featuring extreme high cell density, offering excellent RDS(ON) and gate charge for synchronous buck converter applications. This device meets RoHS and Green Product requirements and is 100% EAS guaranteed with full function reliability approval. It is suitable for networking, load switch, and LED applications.

Product Attributes

  • Brand: Bruckewell Technology Corporation
  • Product Line: MSD Series
  • Certifications: RoHS Compliant, Green Device Available
  • Package Type: TO-252
  • Packing: 3,000/Reel

Technical Specifications

Symbol Parameter Test Conditions Min. Typ. Max. Units
VDS Drain-Source Voltage 100 V
VGS Gate-Source Voltage ±20 V
ID Continuous Drain Current (TC =25C) 25 A
ID Continuous Drain Current (TC =100C) 15 A
IDM Pulsed Drain Current 100 A
IAS Single Pulse Avalanche Current (L =0.1mH) 23 A
EAS Single Pulse Avalanche Energy (L =0.1mH) 26.4 mJ
PD Power Dissipation (TC =25C) 60 W
PD Power Dissipation (TA =25C) 2 W
TJ/TSTG Operating Junction and Storage Temperature -55 +150 °C
RJA Maximum Junction-to-Ambient (Note 1) 62.5 °C/W
RJC Maximum Junction-to-Case (Note 1) 2.1 °C/W
VGS (th) Gate Threshold Voltage VDS =VGS, ID =250µA 1.0 1.7 2.5 V
BVDSS Drain-Source Breakdown Voltage VGS =0V, ID =250µA 100 - - V
IGSS Gate-Source Leakage Current VDS =0V, VGS =±20V - - ±100 nA
IDSS Drain-Source Leakage Current VDS =80V, VGS =0V, TJ =25°C - - 1 µA
IDSS Drain-Source Leakage Current VDS =80V, VGS =0V, TJ =55°C - - 100 µA
RDS (on) Static Drain-Source On-Resistance VGS =10V, ID =25A - - 48 mΩ
RDS (on) Static Drain-Source On-Resistance VGS =4.5V, ID =15A - - 50 mΩ
EAS Single Pulse Avalanche Energy VDD =25V, L =0.1mH, IAS =10A (Note 5) 5 - - mJ
VSD Diode Forward Voltage IS =25A, VGS =0V, TJ =25°C (Note 2) - - 1.0 V
IS Continuous Source Current (Note 1, 6) - - 25 A
ISM Pulsed Source Current (Note 2, 6) - - 100 A
Qg Total Gate Charge - 60 - nC
Qgs Gate-Source Charge - 9.7 - nC
Qgd Gate-Drain (Miller) Charge VDS =80V, ID =20A, VGS =10V - 11.8 - nC
td(on) Turn-On Delay Time VDS =50V, ID =20A, VGS =10V, RG =3.3Ω (Note 2) - 10.4 - ns
tr Rise Time VDS =50V, ID =20A, VGS =10V, RG =3.3Ω - 46 - ns
td(off) Turn-Off Delay Time VDS =50V, ID =20A, VGS =10V, RG =3.3Ω - 54 - ns
tf Fall Time VDS =50V, ID =20A, VGS =10V, RG =3.3Ω - 10 - ns
CISS Input Capacitance VDS =15V, VGS =0V, f =1.0MHz - 3848 - pF
COSS Output Capacitance VDS =15V, VGS =0V, f =1.0MHz - 137 - pF
CRSS Reverse Transfer Capacitance VDS =15V, VGS =0V, f =1.0MHz - 82 - pF
Rg Gate Resistance VGS =VDS =0V, f =1.0MHz - 1.6 3.2 Ω

Notes:

  • 1. The data tested by surface mounted on a 1 inch² FR-4 board with 2OZ copper.
  • 2. The data tested by pulsed, pulse width ≤ 300µs, duty cycle ≤ 2%.
  • 3. The EAS data shows maximum rating. The test condition is VDD=25V, VGS=10V, L=0.1mH, IAS=23A.
  • 4. The power dissipation is limited by 150°C junction temperature.
  • 5. The Min. value is 100% EAS tested guarantee.
  • 6. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation.

2412061551_Bruckewell-MSD100N25_C42407723.pdf

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