Silicon Epitaxial Planar Diode CBI BAV199W with Low Leakage Current and Medium Speed Switching Times
Key Attributes
Model Number:
BAV199W
Product Custom Attributes
Mfr. Part #:
BAV199W
Package:
SOT-323
Product Description
Product Overview
This Silicon Epitaxial Planar Diode is a low leakage switching double diode designed for applications requiring very low leakage current. It features medium speed switching times and a series pair configuration, making it suitable for low leakage current applications.
Product Attributes
- Brand: Heyuan China Base Electronics Technology Co., Ltd.
- Marking: PX
Technical Specifications
| Parameter | Symbol | Value | Unit | Min. | Typ. | Max. |
|---|---|---|---|---|---|---|
| Absolute Maximum Ratings (Ta = 25 OC) | ||||||
| Peak Repetitive Reverse Voltage | VRRM | 85 | V | |||
| Continuous Reverse Voltage | VR | 85 | V | |||
| Continuous Forward Current (Single Diode) | IF | 160 | mA | |||
| Continuous Forward Current (Double Diode) | IF | 140 | mA | |||
| Repetitive Peak Forward Current | IFRM | 500 | mA | |||
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 4 | A | |||
| Non-Repetitive Peak Forward Surge Current (at t = 1 ms) | IFSM | 1 | A | |||
| Non-Repetitive Peak Forward Surge Current (at t = 1 s) | IFSM | 0.5 | A | |||
| Power Dissipation | PD | 250 | mW | |||
| Thermal Resistance Junction to Ambient Air | RJA | 500 | OC/W | |||
| Operating and Storage Temperature Range | Tj, Tstg | -65 to +150 | OC | |||
| Electrical Characteristics (Ta = 25 OC) | ||||||
| Reverse Breakdown Voltage (at IR = 100 A) | V(BR)R | 85 | V | 85 | ||
| Forward Voltage (at IF = 1 mA) | VF | V | 0.9 | |||
| Forward Voltage (at IF = 10 mA) | VF | V | 1 | |||
| Forward Voltage (at IF = 50 mA) | VF | V | 1.1 | |||
| Forward Voltage (at IF = 150 mA) | VF | V | 1.25 | |||
| Reverse Current (at VR = 75 V) | IR | nA | 5 | |||
| Reverse Current (at VR = 75 V, Tj = 150 OC) | IR | nA | 80 | |||
| Total Capacitance (at VR = 0, f = 1 MHz) | CT | pF | 2 | |||
| Reverse Recovery Time (at IF = IR = 10 mA, Irr = 0.1 X IR, RL = 100 ) | trr | s | 3 | |||
2510101615_CBI-BAV199W_C51315120.pdf
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