General purpose NPN transistor CBI MMBT3904 in SOT23 plastic package with epitaxial planar die
Key Attributes
Model Number:
MMBT3904
Product Custom Attributes
Current - Collector Cutoff:
100nA
Emitter-Base Voltage(Vebo):
6V
Pd - Power Dissipation:
200mW
Transition Frequency(fT):
300MHz
Type:
NPN
Current - Collector(Ic):
200mA
Collector - Emitter Voltage VCEO:
40V
Mfr. Part #:
MMBT3904
Package:
SOT-23
Product Description
Product Overview
This NPN transistor, with a complementary PNP type MMBT3906, features an epitaxial planar die construction. It is designed for general-purpose applications and is housed in a SOT-23 plastic surface-mounted package with 3 leads. The transistor offers reliable performance with defined voltage, current, and temperature ratings.
Product Attributes
- Complementary Type: MMBT3906 (PNP)
- Die Construction: Epitaxial Planar
- Package Type: SOT-23 (Plastic surface mounted, 3 leads)
- Origin: Heyuan China Base Electronics Technology Co., Ltd.
Technical Specifications
| Symbol | Parameter | Test Conditions | Min | Max | Unit |
|---|---|---|---|---|---|
| MAXIMUM RATINGS (Ta=25 unless otherwise noted) | |||||
| VCBO | Collector-Base Voltage | 60 | V | ||
| VCEO | Collector-Emitter Voltage | 40 | V | ||
| VEBO | Emitter-Base Voltage | 6 | V | ||
| IC | Collector Current | 200 | mA | ||
| PC | Total Device Dissipation | 200 | mW | ||
| RJA | Thermal Resistance From Junction to Ambient | 625 | /W | ||
| TJ | Junction Temperature | 150 | |||
| Tstg | Storage Temperature | -55 | +150 | ||
| ELECTRICAL CHARACTERISTICS (Ta=25 unless otherwise specified) | |||||
| V(BR)CBO | Collector-base breakdown voltage | IC= 10A, IE=0 | 60 | V | |
| V(BR)CEO | Collector-emitter breakdown voltage | IC= 1mA, IB=0 | 40 | V | |
| V(BR)EBO | Emitter-base breakdown voltage | IE=10A, IC=0 | 6 | V | |
| ICBO | Collector cut-off current | VCB=60V, IE=0 | 0.1 | A | |
| ICEX | Collector cut-off current | VCE=30V, VBE(off)=3V | 50 | nA | |
| IEBO | Emitter cut-off current | VEB=5V, IC=0 | 0.1 | A | |
| hFE | DC current gain | VCE=1V, IC=10mA | 100 | 300 | |
| VCE=1V, IC= 50mA | 60 | ||||
| VCE=1V, IC= 100mA | 30 | ||||
| VCE(sat) | Collector-emitter saturation voltage | IC=50mA, IB= 5mA | 0.3 | V | |
| VBE(sat) | Base-emitter saturation voltage | IC= 50mA, IB= 5mA | 0.95 | V | |
| fT | Transition frequency | VCE=20V, IC=10mA, f=100MHz | 300 | MHz | |
| td | Delay Time | 35 | nS | ||
| tr | Rise Time | VCC=3V, VBE=-0.5V, IC=10mA, IB1=-IB2=1.0mA | 35 | nS | |
| ts | Storage Time | 200 | nS | ||
| tf | Fall Time | VCC=3V, IC=10mA, IB1=-IB2=1mA | 50 | nS | |
2410311341_CBI-MMBT3904_C5366415.pdf
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